公开(公告)号：US20160060759A1

公开(公告)日：2016-03-03

申请号：US14835082

申请日：2015-08-25

Applicant: Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

Inventor： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

IPC: C23C16/455

CPC classification number: C23C16/45574 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45565

Abstract: A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

Abstract translation: 一种气体注入装置，其可以在容器中顺序地供给具有彼此反应的至少两种源气体的基板和包括该气体注入装置的薄膜沉积设备。 气体注入装置包括基板，从基板突出的第一气体供应区域，从基板突出并邻近第一气体供应区域的第二气体供应区域和由第一气体供应源的侧壁限定的沟槽 区域和第二气体供应区域的侧壁。 第一气体供给区域的侧壁和第二气体供给区域的侧壁彼此面对并且在基板上沿径向方向延伸。

公开(公告)号：US08404579B2

公开(公告)日：2013-03-26

申请号：US12960150

申请日：2010-12-03

Applicant: Sang-Hoon Ahn ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  Sang-Don Nam ,  Kyu-Hee Han

Inventor： Sang-Hoon Ahn ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  Sang-Don Nam ,  Kyu-Hee Han

IPC: H01L21/44

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A fuse base insulating region, for example, an insulating interlayer or a compensation region disposed in an insulating interlayer, is formed on a substrate. An etch stop layer is formed on the fuse base insulating region and forming an insulating interlayer having a lower dielectric constant than the first fuse base insulating region on the etch stop layer. A trench extending through the insulating interlayer and the etch stop layer and at least partially into the fuse base insulating region is formed. A fuse is formed in the trench. The fuse base insulating region may have a greater mechanical strength and/or density than the second insulating interlayer.

Abstract translation: 在衬底上形成熔丝基底绝缘区域，例如绝缘中间层或设置在绝缘中间层中的补偿区域。 在熔丝基底绝缘区上形成蚀刻停止层，形成绝缘中间层，该绝缘中间层的介电常数比蚀刻停止层上的第一熔丝基底绝缘区低。 形成了延伸穿过绝缘中间层和蚀刻停止层并且至少部分地进入熔丝基底绝缘区域的沟槽。 在沟槽中形成熔丝。 保险丝座绝缘区域可具有比第二绝缘中间层更大的机械强度和/或密度。

公开(公告)号：US20120083117A1

公开(公告)日：2012-04-05

申请号：US13238297

申请日：2011-09-21

Applicant: Sang-Hoon Ahn ,  Byung-Hee Kim ,  Sang-Don Nam ,  Kyu-Hee Han ,  Gil-Heyun Choi ,  Jang-Hee Lee ,  Jong-Min Baek ,  Kyoung-Hee Kim

Inventor： Sang-Hoon Ahn ,  Byung-Hee Kim ,  Sang-Don Nam ,  Kyu-Hee Han ,  Gil-Heyun Choi ,  Jang-Hee Lee ,  Jong-Min Baek ,  Kyoung-Hee Kim

IPC: H01L21/314 ,  H01L21/768

CPC classification number: H01L21/7682 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/76829 ,  H01L2221/1047

Abstract: Example embodiments relate to a method of forming a hardened porous dielectric layer. The method may include forming a dielectric layer containing porogens on a substrate, transforming the dielectric layer into a porous dielectric layer using a first UV curing process to remove the porogens from the dielectric layer, and transforming the porous dielectric layer into a crosslinked porous dielectric layer using a second UV curing process to generate crosslinks in the porous dielectric layer.

Abstract translation: 示例性实施方案涉及形成硬化多孔介电层的方法。 该方法可以包括在衬底上形成含有致孔剂的电介质层，使用第一UV固化工艺将电介质层转化为多孔介电层，以从电介质层除去致孔剂，并将多孔电介质层转化成交联的多孔介电层 使用第二UV固化方法在多孔介电层中产生交联。