Manufacturing method of thermoelectric conversion element

    公开(公告)号:US11581470B2

    公开(公告)日:2023-02-14

    申请号:US17271057

    申请日:2019-08-27

    Abstract: The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.

    THERMOELECTRIC CONVERSION BODY, THERMOELECTRIC CONVERSION MODULE, AND METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION BODY

    公开(公告)号:US20230044413A1

    公开(公告)日:2023-02-09

    申请号:US17786269

    申请日:2020-12-01

    Abstract: Provided are: a thermoelectric conversion body that has high electrical conductivity, achieving high thermoelectric conversion efficiency when used in a thermoelectric conversion module, and is less susceptible to warpage during manufacture; a method for manufacturing the same; and a thermoelectric conversion module using the same. A thermoelectric conversion body that is a fired product of a composition containing a thermoelectric semiconductor material and a heat resistant resin, wherein, with the heat resistant resin being subjected to temperature elevation and a weight of the heat resistant resin at 400° C. being defined as 100%, a temperature at which the heat resistant resin undergoes a further 5% reduction in weight is 480° C. or lower; a thermoelectric conversion module including the thermoelectric conversion body; and a method for manufacturing the thermoelectric conversion body.

    Thermoelectric conversion material and method for producing same

    公开(公告)号:US11522114B2

    公开(公告)日:2022-12-06

    申请号:US16467745

    申请日:2017-12-07

    Abstract: The present invention provides: a thermoelectric conversion material capable of being produced in a simplified manner and at a lower cost and excellent in thermoelectric performance and flexibility, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound includes a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.

    EXTERNAL LIGHT USE TYPE DISPLAY BODY

    公开(公告)号:US20220317507A1

    公开(公告)日:2022-10-06

    申请号:US17708133

    申请日:2022-03-30

    Abstract: An external light use type display body including: a light diffusion control layer; a display layer; and a reflective layer. The light diffusion control layer has a regular internal structure that comprises a plurality of regions having a relatively high refractive index in a region having a relatively low refractive index. The reflective layer has a patterned indented structure when at least one cross section cut in a thickness direction is viewed. When the entrance plane is irradiated with light rays that travel on the light ray traveling plane with a predetermined incident angle while being scanned along an intersection line of the light ray traveling plane and the entrance plane, the ratio of the light rays satisfying the following Formula (1) or Formula (2) is 50% or more. θid

    METHOD OF MANUFACTURING LAMINATE
    26.
    发明申请

    公开(公告)号:US20220293554A1

    公开(公告)日:2022-09-15

    申请号:US17636211

    申请日:2020-08-20

    Abstract: A method of manufacturing a laminate, the method including: providing a film-form firing material on a support sheet, the film-form firing material containing a sinterable metal particle and a binder component and having an identical or substantially identical shape and an identical size to a shape and size of a semiconductor chip; applying a back surface side of the semiconductor chip to the film-form firing material on the support sheet to face each other; peeling off the film-form firing material and the semiconductor chip from the support sheet; applying, to a substrate, a film-form firing material side of the semiconductor chip to which the film-form firing material has been applied; and heating the film-form firing material to 200° C. or higher to sinter-bond the semiconductor chip and the substrate.

    Electrode material for thermoelectric conversion modules and thermoelectric conversion module using same

    公开(公告)号:US11424397B2

    公开(公告)日:2022-08-23

    申请号:US16493345

    申请日:2018-03-13

    Abstract: Provided are an electrode material for thermoelectric conversion modules capable of preventing cracking and peeling of electrodes that may occur at the bonding parts of a thermoelectric element and an electrode under high-temperature conditions to thereby maintain a low resistance at the bonding parts, and a thermoelectric conversion module using the material. The electrode material for thermoelectric conversion modules includes a first substrate and a second substrate facing each other, a thermoelectric element formed between the first substrate and the second substrate, and an electrode formed on at least one substrate of the first substrate and the second substrate, wherein the substrate is a plastic film, the thermoelectric element contains a bismuth-tellurium-based thermoelectric semiconductor material, a telluride-based thermoelectric semiconductor material, an antimony-tellurium-based thermoelectric semiconductor material, or a bismuth-selenide-based thermoelectric semiconductor material, the electrode that is in contact with the thermoelectric element is formed of a metal material, and the metal material is gold, nickel, aluminum, rhodium, platinum, chromium, palladium, stainless steel, molybdenum or an alloy containing any of these metals.

    METHOD OF FORMING FIRST PROTECTIVE FILM

    公开(公告)号:US20220135828A1

    公开(公告)日:2022-05-05

    申请号:US17575811

    申请日:2022-01-14

    Abstract: A curable resin film of the present invention forms a first protective film (la) by attaching the curable resin film containing an epoxy-based thermosetting component having a weight-average molecular weight of 200 to 4,000 to a surface (5a) of a semiconductor wafer (5) having a plurality of bumps (51) with an average peak height (h1) of 50 to 400 μm, an average diameter of 60 to 500 μm, and an average pitch of 100 to 800 μm, heating the attached curable resin film at 100° C. to 200° C. for 0.5 to 3 hours, and curing the heated curable resin film, and when longitudinal sections thereof are observed by a scanning electron microscope, a ratio (h3/h1) of an average thickness (h3) of the first protective film (1a) at a center position between the bumps (51) to an average peak height (h1) of the bumps (51), and a ratio (h2/h1) of an average thickness (h2) of the first protective film (1a) at a position being in contact with the plurality of bumps (51) to the average peak height (h1) satisfy a relationship represented by the following expression of [{(h2/h1)−(h3/h1)}≤0.1].

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