公开(公告)号：US20060145400A1

公开(公告)日：2006-07-06

申请号：US11028798

申请日：2005-01-04

Applicant: Matthew Colburn ,  Yves Martin ,  Theodore van Kessel ,  Hematha Wickramasinghe

Inventor： Matthew Colburn ,  Yves Martin ,  Theodore van Kessel ,  Hematha Wickramasinghe

IPC: B29C35/08

CPC classification number: G03F7/0002 ,  B29C33/20 ,  B29C33/30 ,  B29C33/303 ,  B29C43/021 ,  B29C2043/025 ,  B29C2043/5841 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/00 ,  G03F9/703 ,  G03F9/7042 ,  G03F9/7053

Abstract: An apparatus (and method) for referencing a surface of a workpiece during imprint lithography, includes an air bearing for mechanically referencing a surface of the workpiece, and a lithographic template coupled to the air bearing.

Abstract translation: 一种用于在压印光刻期间参考工件表面的装置（和方法）包括用于机械地参考工件表面的空气轴承和耦合到空气轴承的光刻模板。

公开(公告)号：US20050236739A1

公开(公告)日：2005-10-27

申请号：US11062420

申请日：2005-02-22

Applicant: Carlton Willson ,  Matthew Colburn

Inventor： Carlton Willson ,  Matthew Colburn

IPC: G03F7/038 ,  B29C31/00 ,  B81C1/00 ,  G03F7/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065 ,  H05K3/06

CPC classification number: B82Y10/00 ,  B29C43/003 ,  B29C43/021 ,  B29C2043/025 ,  B82Y40/00 ,  G03F7/0002 ,  H05K3/061 ,  Y10S977/887 ,  Y10S977/897

Abstract: A method of forming a relief image in a structure comprising a substrate and a transfer layer formed thereon comprises covering the transfer layer with a polymerizable fluid composition, and then contacting the polymerizable fluid composition with a mold having a relief structure formed therein such that the polymerizable fluid composition fills the relief structure in the mold. The polymerizable fluid composition is subjected to conditions to polymerize polymerizable fluid composition and form a solidified polymeric material therefrom on the transfer layer. The mold is then separated from the solid polymeric material such that a replica of the relief structure in the mold is formed in the solidified polymeric material; and the transfer layer and the solidified polymeric material are subjected to an environment to selectively etch the transfer layer relative to the solidified polymeric material such that a relief image is formed in the transfer layer.

Abstract translation: 在包括基板和形成在其上的转印层的结构中形成浮雕图像的方法包括用可聚合流体组合物覆盖转印层，然后使可聚合流体组合物与其中形成有浮雕结构的模具接触，使得可聚合的 流体组合物填充模具中的浮雕结构。 可聚合流体组合物经受聚合可聚合流体组合物并在转移层上形成固化的聚合物材料的条件。 然后将模具与固体聚合物材料分离，使得在固化的聚合物材料中形成模具中的浮雕结构的复制品; 并且转印层和固化的聚合物材料经受环境以相对于固化的聚合物材料选择性地蚀刻转印层，使得在转印层中形成浮雕图像。

公开(公告)号：US20050106762A1

公开(公告)日：2005-05-19

申请号：US10853771

申请日：2004-05-25

Applicant: Nirupama Chakrapani ,  Matthew Colburn ,  Christos Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

Inventor： Nirupama Chakrapani ,  Matthew Colburn ,  Christos Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

IPC: H01L21/00 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/768

CPC classification number: H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

Abstract translation: 通常用于减少集成电路中的RC延迟的是多孔有机硅酸盐的介电膜，其具有二氧化硅像主链与烷基或芳基（以增加材料的疏水性并产生自由体积）直接连接到网络中的Si原子。 Si-R键在暴露于等离子体或通常用于加工的化学处理中很少存活; 这在具有开孔细孔结构的材料中尤其如此。 当Si-R键断裂时，材料由于形成亲水硅烷醇而损失疏水性，并且低介电常数受损。 使用新型甲硅烷基化剂回收材料的疏水性的方法，其可以具有通式（R 2 N 2）X SiR'Y 其中X和Y分别为1至3和3至1的整数，并且其中R和R'选自氢，烷基，芳基，烯丙基和乙烯基部分。 由于甲硅烷基化处理，多孔有机硅酸盐的机械强度也得到改善。

公开(公告)号：US20050062165A1

公开(公告)日：2005-03-24

申请号：US10666564

申请日：2003-09-19

Applicant: Katherine Saenger ,  Maheswaran Surendra ,  Simon Karecki ,  Satya Nitta ,  Sampath Purushothaman ,  Matthew Colburn ,  Timothy Dalton ,  Elbert Huang

Inventor： Katherine Saenger ,  Maheswaran Surendra ,  Simon Karecki ,  Satya Nitta ,  Sampath Purushothaman ,  Matthew Colburn ,  Timothy Dalton ,  Elbert Huang

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L21/4763

CPC classification number: H01L21/76807 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remaining portions of the interconnect structure, is capped with a dielectric barrier which is perforated using a stencil with a regular array of holes. The sacrificial dielectrics are then extracted through the holes in the dielectric barrier layer such that the interconnect lines are substantially surrounded by air except for the regions of the support dielectric under the lines. The holes in the cap layer are closed off by depositing a second barrier dielectric so that a closed air gap is formed. Several embodiments of this method and the resulting structures are described.

Abstract translation: 描述了形成闭合气隙互连结构的方法。 与存在于所述互连结构的其余部分的一个或多个牺牲介电质制成的互连线下永久支撑电介质的区域和周围的互连通孔的起始结构，覆盖有其使用模版具有规则穿孔的电介质阻挡 孔阵列 然后通过电介质阻挡层中的孔提取牺牲电介质，使得互连线基本上被除了线下方的支撑电介质的区域之外的空气包围。 通过沉积第二阻挡电介质来封闭盖层中的孔，从而形成封闭的气隙。 描述该方法的几个实施例和所得到的结构。

公开(公告)号：US20050045997A1

公开(公告)日：2005-03-03

申请号：US10653476

申请日：2003-09-02

Applicant: Timothy Brunner ,  Matthew Colburn ,  Elbert Huang ,  Muthumanickam Sankarapandian

Inventor： Timothy Brunner ,  Matthew Colburn ,  Elbert Huang ,  Muthumanickam Sankarapandian

IPC: G03F7/00 ,  G03F7/20 ,  H01L23/58

CPC classification number: H01L21/76834 ,  G03F7/0035 ,  G03F7/2022 ,  H01L21/76849 ,  Y10S430/146

Abstract: A method for forming a self-aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferential develop in a fashion that is replicates the existing pattern of the substrate. The existing pattern may be comprised of a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. Structures made in accordance with the method.

Abstract translation: 一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩蔽材料是光敏的或热敏感的; 进行基板的覆盖曝光; 并且允许至少一部分掩模材料以复制衬底的现有图案的方式优先显影。 现有图案可以由具有第一反射率的第一组基底区域和第二组区域组成，该第二组区域具有不同于第一组成的第二反射率。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 按照该方法制造的结构。

公开(公告)号：US20080095878A1

公开(公告)日：2008-04-24

申请号：US11760855

申请日：2007-06-11

Applicant: Todd Bailey ,  Byung Choi ,  Matthew Colburn ,  S.V. Sreenivasan ,  C. Willson ,  John Ekerdt

Inventor： Todd Bailey ,  Byung Choi ,  Matthew Colburn ,  S.V. Sreenivasan ,  C. Willson ,  John Ekerdt

IPC: B29C59/02

CPC classification number: G11B5/855 ,  B29C35/0888 ,  B29C37/0053 ,  B29C43/003 ,  B29C2035/0827 ,  B29C2043/025 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/00 ,  Y10S977/887

Abstract: The present invention includes a template comprising a plurality of protrusions and a plurality of recessions with a distance between a zenith of any of the plurality of protrusions and a nadir of any one of the plurality of recessions being less than 250 nm.

Abstract translation: 本发明包括一个模板，其包括多个突起和多个凹陷，多个凹陷之间的距离在多个突起中的任一个的顶点之间的距离和多个凹陷中的任一个的最低点之间小于250nm。

公开(公告)号：US20070138640A1

公开(公告)日：2007-06-21

申请号：US11676447

申请日：2007-02-19

Applicant: Nirupama Chakrapani ,  Matthew Colburn ,  Christops Dimitrakopculos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

Inventor： Nirupama Chakrapani ,  Matthew Colburn ,  Christops Dimitrakopculos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana Nitta

IPC: H01L23/52 ,  H01L23/48

CPC classification number: H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

Abstract translation: 通常用于减少集成电路中的RC延迟的是多孔有机硅酸盐的介电膜，其具有二氧化硅像主链与烷基或芳基（以增加材料的疏水性并产生自由体积）直接附着在网络中的Si原子。 Si-R键在暴露于等离子体或通常用于加工的化学处理中很少存活; 这在具有开孔细孔结构的材料中尤其如此。 当Si-R键断裂时，材料由于形成亲水硅烷醇而损失疏水性，并且低介电常数受损。 使用新型甲硅烷基化剂回收材料的疏水性的方法，其可以具有通式（R 2 N 2）X SiR'Y 其中X和Y分别为1至3和3至1的整数，并且其中R和R'选自氢，烷基，芳基，烯丙基和乙烯基部分。 由于甲硅烷基化处理，多孔有机硅酸盐的机械强度也得到改善。

公开(公告)号：US20050277266A1

公开(公告)日：2005-12-15

申请号：US10710034

申请日：2004-06-14

Applicant: Edward Cooney ,  Vincent McGahay ,  Thomas Shaw ,  Anthony Stamper ,  Matthew Colburn

Inventor： Edward Cooney ,  Vincent McGahay ,  Thomas Shaw ,  Anthony Stamper ,  Matthew Colburn

IPC: C23C14/00 ,  C23C14/32 ,  H01L21/30 ,  H01L21/302 ,  H01L21/311 ,  H01L21/46 ,  H01L21/461 ,  H01L21/768 ,  H01L21/78

CPC classification number: H01L21/76829 ,  H01L21/31144 ,  H01L21/76828 ,  H01L21/78

Abstract: The present invention relates to a process for improved interfacial adhesion of dielectrics using patterned roughing. Improved adhesion strength between layers and substrates can be achieved through increasing the roughness of the interface between the materials. Roughness may including any disturbance of an otherwise generally smooth surface, such as grooves, indents, holes, trenches, and/or the like. Roughing on the interface may be achieved by depositing a material on a surface of the substrate to act as a mask and then using an etching process to induce the roughness. The material, acting as a mask, allows etching to occur on a fine, or sub-miniature, scale below the Scale achieved with a conventional photo mask and lithography to achieve the required pattern roughing. Another material is then deposited on the roughened surface of the substrate, filling in the roughing and adhering to the substrate.

Abstract translation: 本发明涉及使用图案化粗糙化改善电介质的界面粘附的方法。 可以通过增加材料之间的界面的粗糙度来实现层和基底之间的改善的粘附强度。 粗糙度可能包括任何干扰通常平滑的表面，如凹槽，凹痕，孔，沟槽等。 可以通过在衬底的表面上沉积材料作为掩模，然后使用蚀刻工艺来引起粗糙度来实现界面上的粗加工。 用作掩模的材料允许蚀刻在以常规光掩模和光刻实现的规模以下的精细或次微小尺度上发生，以实现所需的图案粗糙化。 然后将另一种材料沉积在基底的粗糙表面上，填充粗加工并粘附到基底上。

公开(公告)号：US20050208752A1

公开(公告)日：2005-09-22

申请号：US10804553

申请日：2004-03-19

Applicant: Matthew Colburn ,  Satyanarayana Nitta ,  Sampath Purushothaman

Inventor： Matthew Colburn ,  Satyanarayana Nitta ,  Sampath Purushothaman

IPC: H01J9/14 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/48 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/06 ,  H01L29/40

CPC classification number: H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating a low k, ultra-low k, and extreme-low k multilayer interconnect structure on a substrate in which the interconnect line features are separated laterally by a dielectric with vertically oriented nano-scale voids formed by perforating it using sub-optical lithography patterning and etching techniques and closing off the tops of the perforations by a dielectric deposition step. The lines are supported either by solid or patterned dielectric features underneath. The method avoids the issues associated with the formation of air gaps after the fabrication of conductor patterns and those associated with the integration of conventional low k, ultra-low k and extreme low k dielectrics which have porosity present before the formation of the interconnect patterns.

Abstract translation: 一种用于在衬底上制造低k，超低k和极低k多层互连结构的方法，其中互连线特征由具有垂直取向的纳米级空隙的电介质侧向分开， 光刻图案和蚀刻技术，并通过介电沉积步骤封闭穿孔的顶部。 线路由固体或图案化的电介质特征支撑。 该方法避免了在形成导体图案之后与形成气隙相关的问题，以及与形成互连图案之前具有孔隙率的常规低k，超低k和极低k电介质的集成相关联的问题。

公开(公告)号：US20050208430A1

公开(公告)日：2005-09-22

申请号：US10804552

申请日：2004-03-19

Applicant: Matthew Colburn ,  Satyanarayana Nitta ,  Sampath Purushothaman

Inventor： Matthew Colburn ,  Satyanarayana Nitta ,  Sampath Purushothaman

IPC: G03F7/00 ,  G03F7/20

CPC classification number: G03F7/2022

Abstract: A method of forming a self aligned pattern on an existing pattern on a substrate including applying a coating of a solution containing a masking material in a carrier, the masking material being either photo or thermally sensitive; performing a blanket exposure of the substrate; and allowing at least a portion of the masking material to preferentially develop in a fashion that replicates the existing pattern of the substrate. The existing pattern includes a first set of regions of the substrate having a first reflectivity and a second set of regions of the substrate having a second reflectivity different from the first composition. The first set of regions can include one or more metal elements and the second set of regions can include one or more dielectrics. Structures made in accordance with the method. A low resolution mask is used to block out regions over the substrate. Additionally, the resist can be applied over another masking layer that contains a separate pattern.

Abstract translation: 一种在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩模材料的溶液的涂层，所述掩模材料为光敏或热敏感的; 进行基板的覆盖曝光; 并且允许至少一部分掩模材料以复制衬底的现有图案的方式优先显影。 现有图案包括具有第一反射率的衬底的第一组区域和具有不同于第一组成的第二反射率的衬底的第二组区域。 第一组区域可以包括一个或多个金属元素，第二组区域可以包括一个或多个电介质。 按照该方法制造的结构。 低分辨率掩模用于阻挡衬底上的区域。 另外，抗蚀剂可以施加在包含单独图案的另一掩蔽层上。