公开(公告)号：US20090124064A1

公开(公告)日：2009-05-14

申请号：US12269276

申请日：2008-11-12

Applicant: Jonathan G. ENGLAND ,  Rajesh Dorai ,  Ludovic Godet

Inventor： Jonathan G. ENGLAND ,  Rajesh Dorai ,  Ludovic Godet

IPC: H01L21/20

CPC classification number: H01L21/02689 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/268 ,  H01L31/0747 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

Abstract: Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: disposing a substrate having an upper surface and a lower surface on a platen contained in a chamber; generating a plasma containing a plurality of charged particles above the upper surface of the substrate, the plasma having a cross sectional area equal to or greater than a surface area of the upper surface of the substrate; applying a first bias voltage to the substrate to attract the charged particles toward the upper surface of the substrate; introducing the charged particles to a region extending under entire upper surface of the substrate; and initiating, concurrently, a first phase transformation in the region from the amorphous phase to a crystalline phase.

公开(公告)号：US20080317968A1

公开(公告)日：2008-12-25

申请号：US12200178

申请日：2008-08-28

Applicant: Vikram SINGH ,  James Steve Buff ,  Rajesh Dorai

Inventor： Vikram SINGH ,  James Steve Buff ,  Rajesh Dorai

IPC: C23C14/00

CPC classification number: H01J37/32412 ,  C23C14/48 ,  H01J37/32009 ,  H01J37/32752

Abstract: A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.

Abstract translation: 等离子体掺杂装置包括腔室和等离子体源，其在腔室中从掺杂气体产生离子。 光栅位于腔室中。 用于支撑靶的压板位于腔室中。 光栅和靶中的至少一个被定向成使得从光栅提取的掺杂离子以非正常的入射角撞击靶。