公开(公告)号：US20230216085A1

公开(公告)日：2023-07-06

申请号：US18009216

申请日：2021-06-09

Applicant: SHOWA DENKO K.K.

Inventor： Ryosuke SEI ,  Kunchan LEE

IPC: H01M10/0562

CPC classification number: H01M10/0562 ,  H01M2300/0071

Abstract: One embodiment of the present invention relates to a solid electrolyte material, a solid electrolyte, a method for producing the solid electrolyte, or an all-solid-state battery, and the solid electrolyte material includes lithium, tantalum, boron, phosphorus, and oxygen as constituent elements, wherein a peak position of a peak having the maximum peak intensity among an 11B-NMR peak is in the range of -15.0 to -5.0 ppm.

公开(公告)号：US11692266B2

公开(公告)日：2023-07-04

申请号：US16717326

申请日：2019-12-17

Applicant: SHOWA DENKO K.K.

Inventor： Yoshikazu Umeta ,  Yoshishige Okuno ,  Rimpei Kindaichi

IPC: C23C16/455 ,  C30B25/14 ,  C30B25/12 ,  H01L21/02 ,  C23C16/32 ,  C23C16/46 ,  C30B29/36 ,  H01L21/205

CPC classification number: C23C16/455 ,  C23C16/325 ,  C23C16/46 ,  C30B25/12 ,  C30B25/14 ,  C30B29/36 ,  H01L21/02529 ,  H01L21/205

Abstract: Provided is a SiC chemical vapor deposition apparatus including: a furnace body inside of which a growth space is formed; and a placement table which is positioned in the growth space and has a placement surface on which a SiC wafer is placed, in which the furnace body comprises a first hole which is positioned on an upper portion which faces the placement surface and through which a raw material gas is introduced into the growth space, a second hole which is positioned on a side wall of the furnace body and through which a purge gas flows into the growth space, a third hole which is positioned on the side wall of the furnace body at a lower position than the second hole and discharges the gases in the growth space, and a protrusion which is protrudes towards the growth space from a lower end of the second hole to adjust a flow of the raw material gas.

公开(公告)号：US20230186948A1

公开(公告)日：2023-06-15

申请号：US18165363

申请日：2023-02-07

Applicant: SHOWA DENKO K.K.

Inventor： Sunao KAKITA ,  Tahahiro KUSHINO ,  Hidenori INADA

IPC: G11B5/73 ,  G11B5/84 ,  G11B5/82

CPC classification number: G11B5/73921 ,  G11B5/8404 ,  G11B5/82

Abstract: A dummy substrate is formed with a disk-shaped glass substrate having a center hole, and a magnetic recording film on an outer circumferential surface along a thickness direction of the glass substrate and an inner circumferential surface of the center hole, and a surface roughness (Ra) of one surface and the other surface of the glass substrate is in a range of 0.2 nm or more and 100 nm or less.

公开(公告)号：US11661478B2

公开(公告)日：2023-05-30

申请号：US16489931

申请日：2018-02-06

Applicant: SHOWA DENKO K.K.

Inventor： Takuya Minami ,  Yoshishige Okuno ,  Yuta Yamaguchi ,  Ryuuta Miyasaka ,  Naoya Fukumoto ,  Hiroko Hattori ,  Hiroyuki Tomita ,  Michio Seri ,  Naoko Ito ,  Ichiro Ota ,  Katsumi Murofushi

IPC: C08G65/331 ,  C08G65/333 ,  C10M107/38 ,  G11B5/725 ,  C10N40/18

CPC classification number: C08G65/331 ,  C08G65/333 ,  C10M107/38 ,  G11B5/7257 ,  C10N2040/18

Abstract: A fluorine-containing ether compound of the present invention is represented by the following General Formula (1). (In the General Formula (1), X is a trivalent atom or a trivalent atom group, A is a linking group including at least one polar group, B is a linking group having a perfluoropolyether chain, and D is a polar group or a substituent having a polar group at the end.)

[Chem. 1]

XA-B-D)3  (1)

公开(公告)号：US20230159402A1

公开(公告)日：2023-05-25

申请号：US17917743

申请日：2021-03-31

Applicant: SHOWA DENKO K.K.

Inventor： Hiroshi UCHIDA ,  Ichiro FUJITA ,  Naoyuki SUGAWARA ,  Makoto SAITO

IPC: C05B11/10 ,  C05G1/00 ,  C05F11/00 ,  C05G3/00 ,  C08B37/08 ,  C08B15/00

CPC classification number: C05B11/10 ,  C05G1/00 ,  C05F11/00 ,  C05G3/00 ,  C08B37/003 ,  C08B15/00

Abstract: The present invention provides a method for efficiently obtaining a fertilizer containing polysaccharide hydrolysates and nutrients such as calcium, phosphoric acid, and nitrogen. The present invention is a method for manufacturing a fertilizer, characterized by comprising: a hydrolysis step for obtaining a mixture including polysaccharide hydrolysates through hydrolysis of polysaccharides using an acid catalyst; and a neutralizing step after the hydrolysis step for adding at least one basic compound selected from the group consisting of potassium salt, phosphate, ammonium salt, and ammonia.

公开(公告)号：US11642721B2

公开(公告)日：2023-05-09

申请号：US17861712

申请日：2022-07-11

Applicant: SHOWA DENKO K.K.

Inventor： Yoshifumi Kimura

IPC: B22D11/124 ,  B22D11/14 ,  B22D11/00

CPC classification number: B22D11/1245 ,  B22D11/003 ,  B22D11/143

Abstract: A horizontal continuous casting apparatus includes a fluid supply pipe for supplying a lubricating fluid to the hollow portion of the mold, which is arranged on one end side of the mold; and, a cooling water cavity for accommodating cooling water cooling an inner peripheral surface of the hollow portion of the mold, which is formed outside the inner peripheral surface, wherein the inner peripheral surface and the inner bottom surface of the cooling water cavity facing the inner peripheral surface form parallel surfaces with each other, and a cooling wall of the mold between the inner peripheral surface and the inner bottom surface is formed so that the heat flux value per unit area from the molten aluminum alloy to the cooling water is 10×105 W/m2 or more.

公开(公告)号：US20230133485A1

公开(公告)日：2023-05-04

申请号：US18048982

申请日：2022-10-24

Applicant: SHOWA DENKO K.K.

Inventor： Hiromitsu Tanuma ,  Shinichi Nakayama ,  Nor Razali Rohman Mumod Ali ,  Kok Sheng Lim

IPC: C23C16/509

Abstract: An electrode filament connection member configured to be attached so as to pass through an outer wall of a chemical vapor deposition apparatus in which an electrode filament is disposed in a chamber is provided, and to form an electrical connection between a wire from a power source and the electrode filament. The electrode filament connection member includes a head portion attached to the electrode filament, and a rod portion that extends through the outer wall and is connected to the wire. The head portion includes an electrode filament attachment portion at a tip end portion, and a side surface that is parallel to an axial direction or is gradually widened from the tip end portion toward the outer wall. An outer shape of the side surface of the head portion conforms to an outer shape of the electrode filament connection member when viewed in projection along the axial direction.

公开(公告)号：US20230120626A1

公开(公告)日：2023-04-20

申请号：US17788125

申请日：2020-12-16

Applicant: SHOWA DENKO K.K.

Inventor： Naoya FUKUMOTO ,  Tsuyoshi KATO ,  Katsumi MUROFUSHI ,  Daisuke YAGYU ,  Masaki NANKO ,  Natsumi SHIBATA

IPC: C10M105/72 ,  C10M105/56 ,  C07C43/13 ,  G11B5/725

Abstract: There is provided a fluorine-containing ether compound represented by the following formula. R1—R2—CH2—R3—CH2—OCH2CH(OH)CH2O—CH2—R3—CH2—R4—R5 (in the formula, R3 represents a perfluoropolyether chain; R2 and R4 represent a divalent linking group having a polar group and may be the same or different from each other; R1 and R5 represent a terminal group bonded to an oxygen atom of R2 or R4 and may be the same or different from each other; and at least one of R1 and R5 is an organic group having 1 to 8 carbon atoms and at least one of hydrogens included in the organic group is substituted by a cyano group).

公开(公告)号：US11600538B2

公开(公告)日：2023-03-07

申请号：US17456506

申请日：2021-11-24

Applicant: SHOWA DENKO K.K.

Inventor： Naoto Ishibashi ,  Koichi Murata ,  Hidekazu Tsuchida

IPC: H01L21/02 ,  H01L21/66 ,  C23C16/32

Abstract: A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Z1/2 centers of the SiC epitaxial layer is 5% or less.

公开(公告)号：US20230059734A1

公开(公告)日：2023-02-23

申请号：US17587499

申请日：2022-01-28

Applicant: SHOWA DENKO K.K.

Inventor： Sho TONEGAWA ,  Akira SAKAWAKI ,  Daizo ENDO ,  Kota HASEGAWA

IPC: H03H9/17 ,  H01L41/047 ,  H03H9/02

Abstract: A piezoelectric film including a piezoelectric body configured to extract radio waves of a required frequency by resonance is provided. The piezoelectric body is based on either of ScAlN or AlN, and an X-ray rocking curve full-width at half-maximum (FWHM) of the piezoelectric body in a lattice plane with a Miller index of (11-20) is not more than 10°.