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    METAL-BASED THERMAL INSULATION STRUCTURES
    21.
    发明公开
    METAL-BASED THERMAL INSULATION STRUCTURES 审中-公开

    公开(公告)号：US20240159348A1

    公开(公告)日：2024-05-16

    申请号：US18506790

    申请日：2023-11-10

    Applicant: SLT Technologies, Inc.

    Inventor： Paul M. VON DOLLEN

    IPC: F16L59/02 ,  B32B3/26 ,  B32B15/01 ,  B32B15/02 ,  C30B7/10

    CPC classification number: F16L59/029 ,  B32B3/266 ,  B32B15/01 ,  B32B15/02 ,  C30B7/105 ,  B32B2255/06 ,  B32B2255/20 ,  B32B2307/304 ,  B32B2307/7376

    Abstract: Embodiments of the disclosure include a thermal insulation structure, comprising a plurality of stacked layers that include a first layer and a second layer. The first layer includes a first surface, a second surface, disposed opposite of the first surface, and a plurality of perforations extending between the first surface and the second surface, wherein the plurality of perforations comprise a first pattern of two or more perforations that form a patterned in a first direction that is parallel to the first surface. The second layer includes a third surface, wherein the third surface is in contact with the second surface of the first layer, a fourth surface, disposed opposite of the third surface, and a plurality of perforations extending between the third surface and the fourth surface, wherein the plurality of perforations comprise a second pattern of two or more perforations that form a pattern in the first direction that is parallel to the third surface.

    Oxygen-doped group III metal nitride and method of manufacture
    22.
    发明授权
    Oxygen-doped group III metal nitride and method of manufacture 有权

    公开(公告)号：US11898269B2

    公开(公告)日：2024-02-13

    申请号：US16868528

    申请日：2020-05-06

    Applicant: SLT Technologies, Inc

    Inventor： Wenkan Jiang ,  Dirk Ehrentraut ,  Mark P. D'Evelyn

    IPC: C30B29/40 ,  C01B21/06 ,  H01L29/20 ,  H01L29/30 ,  C30B7/10

    CPC classification number: C30B29/406 ,  C01B21/0632 ,  C30B7/105 ,  H01L29/2003 ,  H01L29/30 ,  C01P2002/30 ,  C01P2002/74 ,  C01P2002/80 ,  C01P2006/80

    Abstract: A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001)+c-plane and a (000-1)−c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm−3, an impurity concentration of oxygen between about 2×1017 cm−3 and about 1×1020 cm−3, an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×1016 cm−3, a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1, and wherein, at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

    INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL CRYSTAL GROWTH
    23.
    发明公开
    INTERNALLY-HEATED HIGH-PRESSURE APPARATUS FOR SOLVOTHERMAL CRYSTAL GROWTH 审中-公开

    公开(公告)号：US20240026562A1

    公开(公告)日：2024-01-25

    申请号：US18355676

    申请日：2023-07-20

    Applicant: SLT Technologies, Inc.

    Inventor： Mark P. D'EVELYN ,  Paul M. VON DOLLEN

    IPC: C30B7/10 ,  C30B35/00

    CPC classification number: C30B7/10 ,  C30B35/002

    Abstract: Embodiments of the disclosure can include an apparatus for solvothermal crystal growth. The apparatus can include a cylindrical shaped enclosure, a cylindrical heater, a first end closure member, a load-bearing annular insulating member, and a first end plug. The cylindrical heater includes a first end, a second end and a cylindrical wall that extends between the first end and the second end, wherein an interior surface of the cylindrical wall defines a capsule region. The first end closure member is disposed proximate to the first end of the cylindrical heater, the first end closure member being configured to provide axial support for a capsule disposed within the capsule region. The load-bearing annular insulating member is disposed between an inner surface of the cylindrical shaped enclosure and an outer surface of the cylindrical wall of the cylindrical heater. The first end plug is disposed between the first end of the cylindrical heater and the first end closure. The load-bearing annular insulating member or the first end plug comprises a packed-bed ceramic composition, the packed-bed ceramic composition being characterized by a density that is between about 30% and about 98% of a theoretical density of a 100%-dense ceramic having the same composition.

    GROUP III NITRIDE SUBSTRATE AND METHOD OF MAKING
    26.
    发明公开
    GROUP III NITRIDE SUBSTRATE AND METHOD OF MAKING 审中-公开

    公开(公告)号：US20230295839A1

    公开(公告)日：2023-09-21

    申请号：US18122989

    申请日：2023-03-17

    Applicant: SLT Technologies, Inc.

    Inventor： Keiji FUKUTOMI ,  Wenkan JIANG ,  Motoi TAMAKI ,  Mark P. D'EVELYN

    IPC: C30B29/40 ,  H01L33/00 ,  H01L21/02 ,  C30B7/10

    CPC classification number: C30B29/406 ,  H01L33/0075 ,  H01L21/02389 ,  C30B7/105 ,  H01L21/02433

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    HEATER FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING, AND METHOD OF USE
    29.
    发明申请
    HEATER FOR RETROGRADE SOLVOTHERMAL CRYSTAL GROWTH, METHOD OF MAKING, AND METHOD OF USE 有权

    公开(公告)号：US20230110306A1

    公开(公告)日：2023-04-13

    申请号：US17963004

    申请日：2022-10-10

    Applicant: SLT Technologies, Inc. ,  Kyocera Corporation

    Inventor： Mark P. D'EVELYN ,  Paul M. VON DOLLEN ,  Rajeev Tirumala PAKALAPATI ,  Keiji FUKUTOMI ,  Maimi MONZEN ,  Koji MIYAMOTO ,  Motoi TAMAKI

    IPC: C30B35/00 ,  C30B7/10

    Abstract: Embodiments of the disclosure an apparatus for solvothermal crystal growth, comprising: a pressure vessel having a cylindrical shape and a vertical orientation; a cylindrical heater having an upper zone and a lower zone that can be independently controlled; at least one end heater; and an inward-facing surface of a baffle placed within 100 millimeters of a bottom end or top end surface of the growth chamber. The end heater is configured to enable: a variation in the temperature distribution along a first surface to be less than about 10° C., and a variation in the temperature distribution along a second surface to be less than about 20° C., during a crystal growth process. The first surface has a cylindrical shape and is positioned within the pressure vessel, and the second surface comprises an inner diameter of the growth chamber, and the temperature distribution along the second surface is created within an axial distance of at least 100 millimeters of an end of the growth chamber proximate to the first surface.

    LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE
    30.
    发明申请
    LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE 有权

    公开(公告)号：US20210246571A1

    公开(公告)日：2021-08-12

    申请号：US17173170

    申请日：2021-02-10

    Applicant: SLT Technologies, Inc

    Inventor： Drew W. CARDWELL ,  Mark P. D'EVELYN

    IPC: C30B25/18 ,  C30B29/40 ,  C30B25/04

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

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