Abstract:
An image display controller capable of providing excellent visibility of a face display frame and a human display frame associated with an object. The image display controller detects an object in an image, and identifies a face area of the object distinguishably from a human body area exclusive of the face area. Further, the image display controller generates a face display frame for enclosing the face area and a human body display frame for enclosing the human body area. Then, the image display controller displays the face display frame and the human body display frame on a screen together with the image.
Abstract:
An image display controller capable of providing excellent visibility of a face display frame and a human display frame associated with an object. The image display controller detects an object in an image, and identifies a face area of the object distinguishably from a human body area exclusive of the face area. Further, the image display controller generates a face display frame for enclosing the face area and a human body display frame for enclosing the human body area. Then, the image display controller displays the face display frame and the human body display frame on a screen together with the image.
Abstract:
A MEMS device includes: a semiconductor substrate; a vibrating film formed on the semiconductor substrate with a restraining portion interposed between the vibrating film and the semiconductor substrate, and including a lower electrode, and a fixed film formed on the semiconductor substrate with a support portion interposed between the fixed film and the semiconductor substrate to cover the vibrating film, and including an upper electrode. A gap formed between the vibrating film and the fixed film opposed to each other forms an air gap. The restraining portion provides partial coupling between the semiconductor substrate and the vibrating film, and the vibrating film has a multilayer structure in which the lower electrode and a compressive stress inducing insulating film are laminated. The insulating film is located within the perimeter of the lower electrode.
Abstract:
To implement a piezoelectric actuator which can actuate a large object, such as an imaging element, in a predetermined direction at high power without involvement of rotational displacement; which can ensure a large amount of actuation; which is suitable for miniaturization and weight reduction; and which is advantageous in terms of mechanical durability and manufacturing cost. A piezoelectric actuator having a well-balanced mechanical structure is obtained by means of stacking a plurality of cross units, in each of which a pair of bimorph piezoelectric elements (21a and 21b, 21c and 21d) are crossed in the form of the letter X, into two layers (an even number of layers), and fixing the thus-stacked cross units. An imaging element 11 is stably supported by means of two movable ends (C-1, C-2) provided at the extremity of the piezoelectric actuator.
Abstract:
A signal transmit-receive device of the invention reduces the number of high-speed signal lines required for connecting a transmitting circuit group and a receiving circuit group, and for running a loopback test on a signal transmit-receive device. The loopback test circuit uses an error detecting circuit, a test signal producing circuit, and a wiring for transmitting error information. The error detecting circuit compares a test signal pattern defined in advance by a first communication device and a received signal pattern. The test signal producing circuit produces the test signal pattern based on error information. If an error is detected, the error signal is transmitted to the test signal producing circuit through the wiring. The test signal producing circuit produces a predetermined test signal pattern if the error signal DE has an L level; upon receiving H level, it sends back the predetermined test signal pattern to the first communication device.
Abstract:
A circuit region 2 on a main surface of an SOI substrate, and a isolating region 9b defined by insulating isolation trenches 4a and 4b are connected by a wiring resistor, or a diffused resistor 11a in the SOI substrate. The isolating region 9b and an intermediate region 9 are connected by a wiring resistor, or a diffused resistor 11b in the SOI substrate. Furthermore, a circuit region 3 on a main surface of an SOI substrate, and a isolating region 9c defined by insulating isolation trenches 4c and 4d are connected by a wiring resistor, or a diffused resistor 11d in the SOI substrate. The isolating region 9c and an intermediate region 9 are connected by a wiring resistor, or a diffused resistor 11c in the SOI substrate. As a result, distribution of voltage applied between the circuit regions 2 and 3 by the wiring resistors or the diffused resistors 11a to 11d can increase the withstand voltage of a semiconductor integrated circuit.