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21.发明授权Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method 有权检测方法和装置，光刻设备，光刻处理单元和器件制造方法公开(公告)号：US09594310B2
公开(公告)日：2017-03-14
申请号：US14335702
申请日：2014-07-18
Applicant: ASML Netherlands B.V.
Inventor： Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar , Andreas Fuchs , Martyn John Coogans
CPC classification number: G03F7/7065 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G03F7/70633 , G03F9/7049 , G03F9/7088
Abstract: The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured. The intensity of each of the first diffraction orders from the diffraction spectrum are compared to determine overlay (or other properties) of exposed layers on the substrate.
Abstract translation: 本发明使用在图像平面内或附近测量衍射光谱，以便确定曝光的基底的性质。 特别地，正和负的第一衍射级被分离或分离，检测并测量它们的强度。 比较来自衍射光谱的每个第一衍射级的强度，以确定衬底上的暴露层的覆盖（或其它性质）。
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22.发明授权公开(公告)号：US09255892B2
公开(公告)日：2016-02-09
申请号：US14825765
申请日：2015-08-13
Applicant: ASML Netherlands B.V.
IPC: G01B11/00 , G01B11/14 , G03B27/32 , H01L23/544 , G01N21/95 , G03F7/20 , G01N21/47 , G02B5/18 , G03F9/00
CPC classification number: G01N21/9501 , G01N21/4738 , G01N2201/06113 , G01N2201/10 , G02B5/1823 , G02B5/1861 , G03F7/70058 , G03F7/70633 , G03F7/70683 , G03F9/70 , G03F9/7046 , G03F9/7076 , H01L23/544 , H01L2924/0002 , Y10T428/24612 , H01L2924/00
Abstract: A second set of superimposed gratings are superposed over a first set of superimposed gratings. The second set of gratings have a different periodicity from the first set of gratings or a different orientation. Consequently the first order diffraction pattern from the second set of superimposed gratings can be distinguished from the first order diffraction pattern from the first set of superimposed gratings.
Abstract translation: 第二组叠加的光栅叠加在第一组叠加的光栅上。 第二组光栅具有与第一组光栅不同的周期性或不同的取向。 因此，来自第二组叠加光栅的一阶衍射图可以与来自第一组叠加光栅的一阶衍射图案区分开。
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公开(公告)号：US20240369920A1
公开(公告)日：2024-11-07
申请号：US18774721
申请日：2024-07-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan VAN ZWOL , Sander Baltussen , Dennis De Graaf , Johannes Christiaan Leonardus Franken , Adrianus Johannes Maria Giesbers , Alexander Ludwig Klein , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Alexey Sergeevich Kuznetsov , Arnoud Willem Notenboom , Mahdiar Valefi , Marcus Adrianus Van De Kerkhof , Wilhelmus Theodorus Anthonius Johannes Van Den Einden , Ties Wouter Van Der Woord , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov
Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.
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公开(公告)号：US11762281B2
公开(公告)日：2023-09-19
申请号：US17130537
申请日：2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
CPC classification number: G03F1/62 , G02B5/208 , G02B5/283 , G03F1/82 , G03F7/70191 , G03F7/70575 , G03F7/70916 , G03F7/70958 , G03F7/70983
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号：US20220342322A1
公开(公告)日：2022-10-27
申请号：US17621333
申请日：2020-05-19
Applicant: ASML Netherlands B.V.
Inventor： Marcus Adrianus Van De Kerkhof
Abstract: A substrate handling system comprising a substrate holder comprising a main body with a main body surface, and a plurality of burls projecting from the main body surface to support the substrate spaced apart from the main body surface, clamping means, the clamping means being configured to clamp and/or unclamp the substrate onto the substrate holder, and conveying means, the conveying means being configured to load and/or unload the substrate onto the substrate holder, wherein the conveying means is further configured to physically contact the substrate during the clamping and/or unclamping to the substrate holder. It is also described methods for clamping and unclamping a substrate, a computer program, a computer-readable medium and a lithography apparatus.
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Patent Agency Ranking
公开(公告)号：US11320731B2
公开(公告)日：2022-05-03
申请号：US16060635
申请日：2016-12-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Pieter-Jan Van Zwol , Dennis De Graaf , Paul Janssen , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , David Ferdinand Vles , Willem-Pieter Voorthuijzen
Abstract: A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.
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公开(公告)号：US11294291B2
公开(公告)日：2022-04-05
申请号：US16982650
申请日：2019-03-11
Applicant: ASML Netherlands B.V.
IPC: G03F7/20
Abstract: A component of a lithographic apparatus, the component having a contaminant trap surface provided with recesses configured to trap contaminant particles and to reduce specular reflection of DUV radiation. The recesses can have at least one dimension less than or equal to about 2 μm, desirably less than 1 μm.
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公开(公告)号：US11163240B2
公开(公告)日：2021-11-02
申请号：US16809497
申请日：2020-03-04
Applicant: ASML Netherlands B.V.
Abstract: A system for heating an optical component of a lithographic apparatus, the system comprising a heating radiation source, the heating radiation source being configured to emit heating radiation for heating of the optical component, wherein the system is configured to direct the heating radiation emitted by the heating radiation source onto the optical component, a portion of the heating radiation being absorbed by the optical component and another portion of the heating radiation being reflected by optical component, and wherein the system is configured to vary or change a property of the heating radiation emitted by the heating radiation source such that the other portion of the heating radiation that is reflected by the optical component is constant during operation of the lithographic apparatus.
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公开(公告)号：US11150560B2
公开(公告)日：2021-10-19
申请号：US16881109
申请日：2020-05-22
Applicant: ASML Netherlands B.V.
Inventor： Marcus Adrianus Van De Kerkhof , Anton Bernhard Van Oosten , Hans Butler , Erik Roelof Loopstra , Marc Wilhelmus Maria Van Der Wijst , Koen Jacobus Johannes Maria Zaal
Abstract: Disclosed is a system configured to project a beam of radiation onto a target portion of a substrate within a lithographic apparatus. The system includes a radiation source. The radiation source includes a grating structure operable to suppress the zeroth order of reflected radiation for at least a first component wavelength. The grating structure has a periodic profile including regularly spaced structures providing three surface levels, such that radiation diffracted by the grating structure includes radiation of three phases which destructively interfere for at least the zeroth order of the reflected radiation for the first component wavelength. The grating structure is on a radiation collector within the source.
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公开(公告)号：US10732498B2
公开(公告)日：2020-08-04
申请号：US16502674
申请日：2019-07-03
Applicant: ASML Netherlands B.V.
Inventor： Pieter Cristiaan De Groot , Gerard Frans Jozef Schasfoort , Maksym Yuriiovych Sladkov , Manfred Petrus Johannes Maria Dikkers , Jozef Maria Finders , Pieter-Jan Van Zwol , Johannes Jacobus Matheus Baselmans , Stefan Michael Bruno Baumer , Laurentius Cornelius De Winter , Wouter Joep Engelen , Marcus Adrianus Van De Kerkhof , Robbert Jan Voogd
Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.
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