Lithographic method and apparatus
    24.
    发明授权

    公开(公告)号:US09958787B2

    公开(公告)日:2018-05-01

    申请号:US14428023

    申请日:2013-09-17

    CPC classification number: G03F7/70425 G03F7/7045 G03F7/70466 G03F7/70475

    Abstract: A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between center points of the first and second patterned areas corresponds with a dimension of a conventional exposure.

    Exposure apparatus
    27.
    发明授权
    Exposure apparatus 有权
    曝光装置

    公开(公告)号:US08830446B2

    公开(公告)日:2014-09-09

    申请号:US13928203

    申请日:2013-06-26

    Abstract: An extreme ultraviolet exposure apparatus includes a radiation system configured to supply a beam of extreme ultraviolet radiation; a support configured to support a patterning device, the patterning device configured to pattern the beam of extreme ultraviolet radiation according to a desired pattern; a substrate table having an area configured to support a substrate; a projection system configured to project the patterned beam of extreme ultraviolet radiation onto a target portion of the substrate, the projection system comprising a reflective optical system; wherein at least a part of the apparatus that during use of the apparatus is exposed to the beam of extreme ultraviolet radiation is coated with a coating, the coating comprising a metal oxide, or a photocatalyst, or a semiconductor, or any combination thereof.

    Abstract translation: 一种极紫外曝光装置包括一个被配置为提供一束极紫外线辐射的辐射系统; 构造成支撑图案形成装置的支撑件,所述图案形成装置被配置为根据期望的图案来对所述紫外线辐射束进行图案化; 具有被配置为支撑衬底的区域的衬底台; 投影系统,被配置为将所述图案化的极紫外辐射束投影到所述基板的目标部分上,所述投影系统包括反射光学系统; 其中所述装置的至少一部分在所述装置的使用期间暴露于所述紫外线辐射束时被涂覆,所述涂层包含金属氧化物或光催化剂,或半导体或其任何组合。

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