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公开(公告)号：US11437238B2
公开(公告)日：2022-09-06
申请号：US16504646
申请日：2019-07-08
Applicant: Applied Materials, Inc.
Inventor： Nancy Fung , Chi-I Lang , Ho-yung David Hwang
IPC: H01L21/033 , H01L21/02 , H01L21/311
Abstract: Methods and film stacks for extreme ultraviolet (EUV) lithography are described. The film stack comprises a substrate with a hard mask, bottom layer, middle layer and photoresist. Etching of the photoresist is highly selective to the middle layer and a modification of the middle layer allows for a highly selective etch relative to the bottom layer.
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