公开(公告)号：US20220403512A1

公开(公告)日：2022-12-22

申请号：US17355119

申请日：2021-06-22

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  David Marquardt ,  Mohith Verghese

IPC: C23C16/448

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port an outlet port, a manifold having a serpentine base creating a tortuous flow path and a filter media assembly in a bottom-fed configuration. The torturous flow path is defined by a plurality of elongate walls and a plurality of openings of the serpentine base ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20220380897A1

公开(公告)日：2022-12-01

申请号：US17829806

申请日：2022-06-01

Applicant: Applied Materials, Inc.

Inventor： Kunal Bhatnagar ,  Mohith Verghese

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/04 ,  C23C16/40

Abstract: A deposition method demonstrating a slower growth rate is disclosed. Some embodiments of the disclosure provide CVD methods which utilize a halide-containing growth inhibitor as a co-reactant with a metal halide precursor and a reactant. Some embodiments of the disclosure relate to CVD and ALD methods comprising exposure of the substrate surface to a pretreatment comprising a halide-containing growth inhibitor.