公开(公告)号：US09263265B2

公开(公告)日：2016-02-16

申请号：US14472825

申请日：2014-08-29

Applicant: Applied Materials, Inc.

Inventor： Shashank Sharma ,  Shankar Muthukrishnan ,  Abhilash J. Mayur

IPC: H01L21/48 ,  H01L21/02 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/02683 ,  H01L21/02532 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248

Abstract: A method is disclosed for crystallizing semiconductor material so that it has large grains of uniform size comprising delivering a first energy exposure of high intensity and short duration, and then delivering at least one second energy exposures of low intensity and long duration. The first energy exposure heats the substrate to a high temperature for a duration less than about 0.1 sec. The second energy exposure heats the substrate to a lower temperature for a duration greater than about 0.1 sec.

Abstract translation: 公开了一种用于使半导体材料结晶的方法，使得其具有均匀尺寸的大晶粒，包括递送高强度和短持续时间的第一能量曝光，然后传递至少一个低强度和长持续时间的第二能量曝光。 第一能量曝光将基板加热至高于约0.1秒的持续时间。 第二能量曝光将基板加热到较低温度持续大于约0.1秒。