公开(公告)号：US20070252179A1

公开(公告)日：2007-11-01

申请号：US11785145

申请日：2007-04-16

Applicant: Atsuo Isobe ,  Tamae Takano ,  Yasuyuki Arai ,  Fumiko Terasawa

Inventor： Atsuo Isobe ,  Tamae Takano ,  Yasuyuki Arai ,  Fumiko Terasawa

IPC: H01L29/76

CPC classification number: H01L27/12 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

Abstract: A manufacturing method of a semiconductor device of the present invention includes the steps of forming a stacked body in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked over a substrate; selectively removing the stacked body to form a plurality of island-shaped stacked bodies; forming an insulating film to cover the plurality of island-shaped stacked bodies; removing a part of the insulating film to expose a surface of the first conductive film, such that a surface of the first conductive film almost coextensive with a height of the insulating film; forming a second conductive film over the first conductive film and a left part of the insulating film; forming a resist over the second conductive film; selectively removing the first conductive film and the second conductive film using the resist as a mask.

Abstract translation: 本发明的半导体器件的制造方法包括以下步骤：在衬底上依次层叠有半导体膜，栅极绝缘膜和第一导电膜的层叠体; 选择性地去除层叠体以形成多个岛状堆叠体; 形成绝缘膜以覆盖所述多个岛状堆叠体; 去除绝缘膜的一部分以暴露第一导电膜的表面，使得第一导电膜的表面几乎与绝缘膜的高度共同延伸; 在所述第一导电膜和所述绝缘膜的左部分上形成第二导电膜; 在所述第二导电膜上形成抗蚀剂; 使用抗蚀剂作为掩模选择性地去除第一导电膜和第二导电膜。

公开(公告)号：US07226817B2

公开(公告)日：2007-06-05

申请号：US10330015

申请日：2002-12-27

Applicant: Yoshifumi Tanada ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

Inventor： Yoshifumi Tanada ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

IPC: H01L21/00

CPC classification number: H01L21/02683 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78675

Abstract: A method of efficiently forming a circuit using a thin film transistor with a semiconductor layer in which preferable crystallinity is obtained is provided. A location on which stress concentrates according to crystallization of a semiconductor layer formed on a substrate having unevenness corresponds to the edges and their vicinities of the unevenness provided on the substrate, that is, the boundary between a concave portion and a convex portion and its vicinities. Thus, the location in which stress concentration is caused can be specified and controlled according to the shape of a slit-shaped base layer. In addition, an island-like semiconductor layer (1305) which becomes the active layer of a TFT is formed on the concave portion or the convex portion of the substrate having the unevenness. At this time, at least a portion which becomes the channel formation region of the TFT is formed without crossing the boundary between the concave portion and the convex portion. Such TFTs are used in parallel to construct a TFT having a large channel width so that fluctuation in electrical characteristics is averaged.

Abstract translation: 提供一种利用具有优选结晶度的半导体层的薄膜晶体管有效地形成电路的方法。 根据形成在具有凹凸的基板上的半导体层的结晶应力集中的位置对应于设置在基板上的凹凸的边缘及其附近，即凹部与凸部之间的边界及其附近 。 因此，可以根据狭缝状基层的形状来规定和控制应力集中的位置。 此外，在具有凹凸的基板的凹部或凸部上形成成为TFT的有源层的岛状半导体层（1305）。 此时，成为TFT的沟道形成区域的至少一部分形成为不与凹部和凸部之间的边界交叉。 并联使用这样的TFT构成具有较大沟道宽度的TFT，使得电特性的波动平均化。

公开(公告)号：US07179699B2

公开(公告)日：2007-02-20

申请号：US10920316

申请日：2004-08-18

Applicant: Hidekazu Miyairi ,  Atsuo Isobe ,  Tomoaki Moriwaka ,  Akihisa Shimomura

Inventor： Hidekazu Miyairi ,  Atsuo Isobe ,  Tomoaki Moriwaka ,  Akihisa Shimomura

IPC: H01L21/00

CPC classification number: H01L21/02691 ,  C30B1/00 ,  C30B29/06 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/76825 ,  H01L21/76828 ,  H01L27/1281 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78684

Abstract: The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deteriorating, on-current from decreasing, or off-current from increasing due to a grain boundary and a semiconductor device fabricated by the fabrication method. Striped (banded) or rectangular concave and convex portions are formed. Then, a semiconductor film formed on an insulating film is irradiated with a laser beam diagonally to the longitudinal direction of concave and convex portions on the insulating film.

Abstract translation: 本发明的目的是提供一种使用能够防止在TFT的沟道形成区域上形成晶界并防止TFT的迁移率极度恶化的激光晶化方法的半导体器件的制造方法， 电流来自由晶界引起的增加或截止电流，以及通过制造方法制造的半导体器件。 形成带状（带状）或矩形凹凸部。 然后，在绝缘膜上形成的半导体膜被照射在绝缘膜上的凹凸部的纵向方向上对角线的激光束。

公开(公告)号：US20060278878A1

公开(公告)日：2006-12-14

申请号：US11480429

申请日：2006-07-05

Applicant: Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

Inventor： Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

IPC: H01L29/04

CPC classification number: H01L29/4908 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1277 ,  H01L29/42384

Abstract: A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at 400° C. and above. Heat treatment at a high temperature (400-700° C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1-5 μm wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.

Abstract translation: 一种半导体器件及其制造方法，所述半导体器件具有新的电极结构，其具有低电阻率并且在400℃及以上的温度下经受热处理。 由于布线由具有高耐热性的Ta膜或Ta基膜制成，所以可以在高温（400-700℃）下进行热处理。 该热处理允许在晶体硅膜中吸收金属元素。 由于该热处理低于栅极布线（宽度为0.1-5μm）耐受并且栅极布线被保护膜保护的温度，所以栅极布线保持其低电阻。

公开(公告)号：US07138306B2

公开(公告)日：2006-11-21

申请号：US10252828

申请日：2002-09-24

Applicant: Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

Inventor： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

IPC: H01L21/00

CPC classification number: H01L21/02675 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/283 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/14625

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

公开(公告)号：US07129121B2

公开(公告)日：2006-10-31

申请号：US11159278

申请日：2005-06-23

Applicant: Munehiro Azami ,  Chiho Kokubo ,  Aiko Shiga ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

Inventor： Munehiro Azami ,  Chiho Kokubo ,  Aiko Shiga ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/336 ,  H01L21/8234

CPC classification number: H01L21/02678 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675

Abstract: A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.

公开(公告)号：US20050263767A1

公开(公告)日：2005-12-01

申请号：US11136705

申请日：2005-05-25

Applicant: Shunpei Yamazaki ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

Inventor： Shunpei Yamazaki ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

IPC: H01L21/77 ,  H01L21/8247 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/786

CPC classification number: H01L27/127 ,  H01L24/32 ,  H01L24/73 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/1214 ,  H01L27/13 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L2029/7863 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01014

Abstract: The present invention provides a semiconductor device capable of being mass-produced and a manufacturing method of the semiconductor device. The present invention also provides a semiconductor device using an extreme thin integrated circuit and a manufacturing method of the semiconductor device. Further, the present invention provides a low power consumption semiconductor device and a manufacturing method of the semiconductor device. According to one aspect of the present invention, a semiconductor device that has a semiconductor nonvolatile memory element transistor over an insulating surface in which a floating gate electrode of the memory transistor is formed by a plurality of conductive particles or semiconductor particles is provided.

Abstract translation: 本发明提供一种能够大规模生产的半导体器件和该半导体器件的制造方法。 本发明还提供了使用极薄集成电路的半导体器件和半导体器件的制造方法。 此外，本发明提供一种半导体器件的低功耗半导体器件和制造方法。 根据本发明的一个方面，提供了一种在绝缘表面上具有半导体非易失性存储元件晶体管的半导体器件，其中存储晶体管的浮置栅电极由多个导电粒子或半导体粒子形成。

公开(公告)号：US20050253178A1

公开(公告)日：2005-11-17

申请号：US11110918

申请日：2005-04-21

Applicant: Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

Inventor： Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

IPC: H01L21/00 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12

CPC classification number: H01L27/1259 ,  H01L27/1214

Abstract: A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer. In the second annealing, a base metal film absorbs and accumulates heat of the laser irradiation, and a semiconductor layer is supplied with heat of the base metal film in addition to heat of the laser irradiation, thereby enhancing efficiency of the silicide reaction in the source and drain regions.

Abstract translation: 对薄膜集成电路进行自对准处理，而不用担心对玻璃基板的损坏，因此可以实现电路的高速操作。 在玻璃基板上形成贱金属膜，氧化物和基底绝缘膜。 在基底绝缘膜上形成具有侧壁的TFT，并且形成覆盖TFT的金属膜。 在不会引起基板收缩的温度下由RTA等进行退火，在源极和漏极区域形成高阻金属硅化物层。 在除去未反应的金属膜之后，对第二次退火进行激光照射; 因此进行硅化物反应，高阻金属硅化物层变成低电阻金属硅化物层。 在第二退火中，贱金属膜吸收并累积激光照射的热量，并且除了激光照射的热量之外，还向半导体层供应贱金属膜的热量，从而提高源的硅化物反应的效率 和漏区。

公开(公告)号：US20050205869A1

公开(公告)日：2005-09-22

申请号：US11107822

申请日：2005-04-18

Applicant: Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

Inventor： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

IPC: H01L21/20 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04

CPC classification number: H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281

Abstract: To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.

公开(公告)号：US06933527B2

公开(公告)日：2005-08-23

申请号：US10330025

申请日：2002-12-27

Applicant: Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

Inventor： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

IPC: H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/104 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC classification number: H01L21/02683 ,  H01L21/2022 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696

Abstract: It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

Abstract translation: 提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加 。 在基板上形成绝缘膜，在绝缘膜上形成半导体膜。 由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。 具体地，在半导体膜上形成条状或矩形凹凸。 连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。