POLISHING APPARATUS AND POLISHING METHOD
    23.
    发明申请

    公开(公告)号:US20180147687A1

    公开(公告)日:2018-05-31

    申请号:US15816061

    申请日:2017-11-17

    CPC classification number: B24B37/013 B24B37/20

    Abstract: A polishing apparatus of the present disclosure polishes a polishing target by pressing the polishing target against a polishing pad. An eddy current sensor measures an impedance that is changeable according to a change of a film thickness of the polishing target, at a plurality of positions of the polishing target, and outputs measurement signals. A difference calculator generates data corresponding to a film thickness based on a measurement signal. The difference calculator calculates a difference between data at different times based on measurement signals output by the eddy current sensor at different times at a center of the polishing target. An end point detector detects a polishing end point indicating the end of polishing based on the difference calculated by the difference calculator.

    POLISHING APPARATUS AND POLISHING METHOD
    24.
    发明申请

    公开(公告)号:US20170106493A1

    公开(公告)日:2017-04-20

    申请号:US15293158

    申请日:2016-10-13

    Abstract: A polishing apparatus 100 includes a first electric motor 14 that rotationally drives a polishing table 12, and a second electric motor 22 that rotationally drives a top ring 20 that holds a semiconductor wafer 18. The polishing apparatus 100 includes: a current detection portion 24; an accumulation portion 110 that accumulates, for a prescribed interval, current values of three phases that are detected by the current detection portion 24; a difference portion 112 that determines a difference between a detected current value in an interval that is different to the prescribed interval and the accumulated current value; and an endpoint detection portion 29 that detects a polishing endpoint that indicates the end of polishing of the surface of the semiconductor wafer 18, based on a change in the difference that the difference portion 112 outputs.

    POLISHING METHOD
    25.
    发明申请
    POLISHING METHOD 有权
    抛光方法

    公开(公告)号:US20150099424A1

    公开(公告)日:2015-04-09

    申请号:US14506562

    申请日:2014-10-03

    CPC classification number: B24B49/18 B24B37/013

    Abstract: A polishing method includes: rotating a polishing table that supports a polishing pad; polishing a conductive film by pressing a substrate having the conductive film against the polishing pad; obtaining a film thickness signal with use of an eddy current film-thickness sensor disposed in the polishing table; determining a thickness of the polishing pad based on the film thickness signal; determining a polishing rate of the conductive film corresponding to the determined thickness of the polishing pad; calculating an expected amount of polishing of the conductive film to be polished at the determined polishing rate for a predetermined polishing time; calculating a temporary end-point film thickness by adding the expected amount of polishing to a target thickness; and terminating polishing of the conductive film when the predetermined polishing time has elapsed from a point of time when the thickness of the conductive film has reached the temporary end-point film thickness.

    Abstract translation: 抛光方法包括:旋转支撑抛光垫的抛光台; 通过将具有导电膜的基板压靠在抛光垫上来研磨导电膜; 使用设置在所述研磨台中的涡流膜厚度传感器获得膜厚信号; 基于所述膜厚度信号确定所述抛光垫的厚度; 确定与所确定的抛光垫的厚度相对应的导电膜的抛光速率; 以预定的抛光时间以确定的抛光速率计算待抛光的导电膜的预期抛光量; 通过将预期抛光量加到目标厚度上来计算临时终点膜厚度; 并且在从导电膜的厚度达到临时终点膜厚度的时刻开始经过规定的研磨时间后,终止对导电膜的研磨。

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