公开(公告)号：US11267988B2

公开(公告)日：2022-03-08

申请号：US16939189

申请日：2020-07-27

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura

IPC: C09G1/02 ,  C08K3/36 ,  H01L21/306

Abstract: A polishing liquid is a polishing liquid used for chemical mechanical polishing, the polishing liquid including colloidal silica; and a buffering agent excluding phosphoric acid, in which the buffering agent is a compound having a pKa within a range of X±1 in a case where a pH of the polishing liquid is denoted by X, a zeta potential of the colloidal silica measured in a state where the colloidal silica is present in the polishing liquid is −20 mV or less, an electrical conductivity is 200 μS/cm or more, and a pH is 2 to 6.

公开(公告)号：US11256173B2

公开(公告)日：2022-02-22

申请号：US16143496

申请日：2018-09-27

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura ,  Tetsuya Shimizu ,  Satoru Murayama

IPC: G03F7/32 ,  G03F7/40 ,  G03F7/039 ,  G03F7/027 ,  G03F7/20 ,  H01L21/02

Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor and a pattern forming method, in which the formation of particles including metal atoms can be reduced and an excellent pattern can be formed.
A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: a quaternary ammonium compound represented by Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn, and a total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.

公开(公告)号：US11079677B2

公开(公告)日：2021-08-03

申请号：US16519004

申请日：2019-07-23

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/20 ,  G03F7/16 ,  G03F7/32

Abstract: An object of the present invention is to provide a chemical liquid which makes it difficult for a defect to occur on a substrate after development. Another object of the present invention is to provide a chemical liquid storage body and a pattern forming method.
The chemical liquid of the according to an embodiment of the present invention contains a main agent which is formed of one kind of organic solvent or formed of a mixture of two or more kinds of organic solvents, an impurity metal, and a surfactant, in which a vapor pressure of the main agent is 60 to 1,340 Pa at 25° C., the impurity metal contains particles containing one kind of metal selected from the group consisting of Fe, Cr, Ni, and Pb, in a case where the chemical liquid contains one kind of particles, a content of the particles in the chemical liquid is 0.001 to 30 mass ppt with respect to a total mass of the chemical liquid, and in a case where the chemical liquid contains two or more kinds of particles, a content of each kind of the particles in the chemical liquid is 0.001 to 30 mass ppt with respect to the total mass of the chemical liquid.

公开(公告)号：US10062580B2

公开(公告)日：2018-08-28

申请号：US15245593

申请日：2016-08-24

Applicant: FUJIFILM Corporation

Inventor： Atsushi Mizutani ,  Tetsuya Kamimura

IPC: H01L21/302 ,  H01L21/461 ,  C03C15/00 ,  C03C25/68 ,  H01L21/3213 ,  C23F1/10 ,  C23F1/14 ,  H01L21/02 ,  C23F1/00 ,  C23F1/26 ,  C23F1/30 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/32134 ,  C23F1/00 ,  C23F1/10 ,  C23F1/14 ,  C23F1/26 ,  C23F1/30 ,  H01L21/02019 ,  H01L21/02381 ,  H01L29/665 ,  H01L29/78

Abstract: Provided is an etchant for a semiconductor process, which contains a sulfonic acid compound, a halogen ion, nitric acid or a nitric acid ion, an organic cation, and water.

公开(公告)号：US08940644B2

公开(公告)日：2015-01-27

申请号：US13770282

申请日：2013-02-19

Applicant: FUJIFILM Corporation

Inventor： Atsushi Mizutani ,  Tetsuya Kamimura ,  Akiko Yoshii ,  Tetsuya Shimizu

IPC: H01L21/302

CPC classification number: C09K13/08 ,  H01L21/28158 ,  H01L21/30604 ,  H01L21/31111

Abstract: A method for manufacturing a semiconductor substrate product having: providing an etching liquid containing water, a hydrofluoric acid compound and an organic solvent, and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer.

Abstract translation: 一种制造半导体衬底产品的方法，其具有：提供含有水，氢氟酸化合物和有机溶剂的蚀刻液，并将蚀刻液施加到半导体衬底，所述半导体衬底具有硅层和氧化硅层， 含有杂质的硅层，从而选择性地蚀刻氧化硅层。

公开(公告)号：US20140120734A1

公开(公告)日：2014-05-01

申请号：US14146142

申请日：2014-01-02

Applicant: Fujifilm Electronic Materials U.S.A., Inc. ,  FUJIFILM Corporation

Inventor： Tomonori Takahashi ,  Tadashi Inaba ,  Atsushi Mizutani ,  Bing Du ,  William A. Wojtczak ,  Kazutaka Takahashi ,  Tetsuya Kamimura

IPC: H01L21/3213 ,  C23F1/30

CPC classification number: H01L21/32134 ,  C09K13/06 ,  C23F1/16 ,  C23F1/28 ,  C23F1/30 ,  C23F1/44 ,  H01L21/28518 ,  H01L21/76843

Abstract: This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water.

Abstract translation: 本公开涉及一种用于制造半导体器件的方法。 该方法包括用蚀刻组合物蚀刻半导体衬底上的金属膜; 并用冲洗溶剂冲洗蚀刻的金属膜。 蚀刻组合物包含至少一种酸; 至少一种含卤化物阴离子的化合物，卤化物阴离子是氯化物或溴化物; 至少一种含有硝酸根或亚硝酰离子的化合物; 和水。

公开(公告)号：US12282259B2

公开(公告)日：2025-04-22

申请号：US16924859

申请日：2020-07-09

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura

IPC: G03F7/32 ,  G01N15/06 ,  G01N21/95 ,  G03F7/004 ,  G03F7/11 ,  G01N15/075 ,  G03F7/20

Abstract: An object is to provide a liquid chemical exhibiting excellent defect inhibitive performance even in a case of being applied to a resist process by KrF excimer laser exposure and ArF excimer laser exposure. Another object is to provide a method for analyzing a test target solution and a method for producing a liquid chemical.
A liquid chemical includes an organic solvent; and metal-containing particles containing a metal atom and having a particle size of 10 to 100 nm, in which the number of the metal-containing particles contained is 1.0×10−2 to 1.0×1012 particles/cm3.

公开(公告)号：US12188901B2

公开(公告)日：2025-01-07

申请号：US17848410

申请日：2022-06-24

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura

IPC: G01N29/036 ,  G01N1/14 ,  G01N1/40 ,  G01N5/02 ,  G01N29/02 ,  G01N29/44

Abstract: A management method of managing a purity of a chemical liquid containing an organic solvent by sensing impurities in the chemical liquid. The management method includes Step 1 of preparing a target chemical liquid containing an organic solvent; Step 2 of bringing the target chemical liquid into contact with a crystal oscillator sensor including an adsorption layer that adsorbs the impurities and a crystal oscillator and obtaining an amount of change in a resonance frequency of the crystal oscillator resulting from contact of the target chemical liquid; and Step 3 of managing the purity of the chemical liquid by comparing whether or not the obtained amount of change falls within a permissible range based on a preset purity of the target chemical liquid. In Step 2, at least a part of a liquid contact portion coming into contact with the target chemical liquid is made of a fluorine-based resin.

公开(公告)号：US12169362B2

公开(公告)日：2024-12-17

申请号：US18218727

申请日：2023-07-06

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura ,  Satomi Takahashi

IPC: C11D3/16 ,  B65D88/06 ,  B65D88/08 ,  C08F10/06 ,  C08F14/26 ,  C11D3/20 ,  C11D3/43 ,  C11D7/22 ,  C11D7/26 ,  C11D7/50 ,  G03F7/16 ,  G03F7/32 ,  H01L21/027

Abstract: An object of the present invention is to provide a chemical liquid having excellent developability and excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid storage body, a chemical liquid filling method, and a chemical liquid storage method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, a metal impurity, and an organic impurity, in which the metal impurity contains metal atoms, a total content of the metal atoms in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 50 mass ppt, a total content of the organic impurity in the chemical liquid with respect to the total mass of the chemical liquid is 0.1 to 10,000 mass ppm, the organic impurity contains an alcohol impurity, and a mass ratio of a content of the alcohol impurity to the total content of the organic impurity is 0.0001 to 0.5.

公开(公告)号：US11892775B2

公开(公告)日：2024-02-06

申请号：US17676235

申请日：2022-02-21

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Shimizu ,  Tetsuya Kamimura

IPC: G03F7/32 ,  G03F7/30 ,  G03F7/16 ,  G03F7/40 ,  H01L21/027 ,  B65D25/14 ,  B65D85/00 ,  H01L21/308

CPC classification number: G03F7/32 ,  B65D25/14 ,  B65D85/00 ,  B65D85/70 ,  G03F7/16 ,  G03F7/30 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/308

Abstract: A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores the treatment liquid, wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.