公开(公告)号：US11487059B2

公开(公告)日：2022-11-01

申请号：US17179532

申请日：2021-02-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Asli Sahin ,  Karen A. Nummy ,  Thomas Houghton ,  Kevin K. Dezfulian ,  Kenneth J. Giewont ,  Yusheng Bian

IPC: G02B6/122 ,  G02B6/13

Abstract: A photonics integrated circuit includes a semiconductor substrate; a buried insulator layer positioned over the semiconductor substrate; and a back-end-of-line (BEOL) insulator stack over a first portion of the buried insulator layer. In addition, the PIC includes a silicon nitride (SiN) waveguide edge coupler positioned in a first region over the buried insulator layer and at least partially under the BEOL insulator stack. An oxide layer extends over a side of the BEOL insulator stack. The SiN waveguide edge coupler provides better power handling and fabrication tolerance than silicon waveguide edge couplers, despite the location under various BEOL layers. The PIC can also include silicon waveguide edger coupler(s).

公开(公告)号：US11320589B1

公开(公告)日：2022-05-03

申请号：US17084186

申请日：2020-10-29

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Siva P. Adusumilli ,  Bo Peng ,  Kenneth J. Giewont

IPC: G02B6/124 ,  G02B6/12 ,  G02B6/13

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to grating couplers integrated with one or more airgap and methods of manufacture. The structure includes: a substrate material comprising one or more airgaps; and a grating coupler disposed over the substrate material and the one or more airgaps.

公开(公告)号：US20250147234A1

公开(公告)日：2025-05-08

申请号：US18501285

申请日：2023-11-03

Applicant: GlobalFoundries U.S. Inc.

Inventor： Kenneth J. Giewont ,  Theodore Letavic ,  Yusheng Bian

IPC: G02B6/122 ,  G02B6/12 ,  G02B6/13

Abstract: Structures for a photonics chip that include an integrated semiconductor laser and methods of forming such structures. The structure comprises a waveguide core, a multi-layer quantum-well stack, and an optical coupler on a portion of the waveguide core. The optical coupler, which comprises a semiconductor material, is disposed between the portion of the waveguide core and the multi-layer quantum-well stack.

公开(公告)号：US12135455B2

公开(公告)日：2024-11-05

申请号：US17723608

申请日：2022-04-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Kenneth J. Giewont

IPC: G02B6/122

Abstract: Disclosed is a photonic integrated circuit (PIC) structure including a first waveguide core with a first end portion, a second waveguide core with a second end portion overlaying and physically separated from the first end portion, and a coupler configured to facilitate low-loss optical signal transmission between the waveguide cores. The coupler can include at least one array of photonic material elements (e.g., photonic crystal elements or photonic metamaterial elements) embedded in cladding material between the end portions. Alternatively, the coupler can include at least one photonic material layer (e.g., a photonic crystal layer or a photonic metamaterial layer) between and physically separated from the end portions and an array of cladding material elements extending through the photonic material layer. Also disclosed is a PIC structure including an on-chip system (e.g., a photonic computing system) including a crossing array implemented using any of the above-described couplers.

公开(公告)号：US11934008B2

公开(公告)日：2024-03-19

申请号：US18083716

申请日：2022-12-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Kenneth J. Giewont ,  Karen Nummy

IPC: G02B6/12 ,  F21V8/00 ,  G02B6/122 ,  G02B6/14

CPC classification number: G02B6/1228 ,  G02B6/0046 ,  G02B6/1225 ,  G02B6/14 ,  G02B2006/12035 ,  G02B2006/1215 ,  G02B2006/12152

Abstract: Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure includes a waveguide core over a dielectric layer, and a back-end-of-line stack over the waveguide core and the dielectric layer. The back-end-of-line stack includes an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature. The first feature, the second feature, and the third feature are positioned on the interlayer dielectric layer adjacent to the side edge, and the third feature has an overlapping relationship with a tapered section of the waveguide core.

公开(公告)号：US20230333318A1

公开(公告)日：2023-10-19

申请号：US17723608

申请日：2022-04-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Kenneth J. Giewont

IPC: G02B6/122

CPC classification number: G02B6/1225 ,  G02B6/1228

Abstract: Disclosed is a photonic integrated circuit (PIC) structure including a first waveguide core with a first end portion, a second waveguide core with a second end portion overlaying and physically separated from the first end portion, and a coupler configured to facilitate low-loss optical signal transmission between the waveguide cores. The coupler can include at least one array of photonic material elements (e.g., photonic crystal elements or photonic metamaterial elements) embedded in cladding material between the end portions. Alternatively, the coupler can include at least one photonic material layer (e.g., a photonic crystal layer or a photonic metamaterial layer) between and physically separated from the end portions and an array of cladding material elements extending through the photonic material layer. Also disclosed is a PIC structure including an on-chip system (e.g., a photonic computing system) including a crossing array implemented using any of the above-described couplers.

公开(公告)号：US11555964B1

公开(公告)日：2023-01-17

申请号：US17363846

申请日：2021-06-30

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Michal Rakowski ,  Petar I. Todorov ,  Yusheng Bian ,  Won Suk Lee ,  Asif J. Chowdhury ,  Kenneth J. Giewont

IPC: G02B6/125 ,  G02F1/01 ,  G02B6/136 ,  G02B6/12

Abstract: Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide. Thus, the heating element is usable for thermally tuning the closed-curve waveguide via the closed-curve thermal coupler to minimize any temperature-dependent resonance shift (TDRS).

公开(公告)号：US20220268994A1

公开(公告)日：2022-08-25

申请号：US17179532

申请日：2021-02-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Asli Sahin ,  Karen A. Nummy ,  Thomas Houghton ,  Kevin K. Dezfulian ,  Kenneth J. Giewont ,  Yusheng Bian

IPC: G02B6/122 ,  G02B6/13

Abstract: A photonics integrated circuit includes a semiconductor substrate; a buried insulator layer positioned over the semiconductor substrate; and a back-end-of-line (BEOL) insulator stack over a first portion of the buried insulator layer. In addition, the PIC includes a silicon nitride (SiN) waveguide edge coupler positioned in a first region over the buried insulator layer and at least partially under the BEOL insulator stack. An oxide layer extends over a side of the BEOL insulator stack. The SiN waveguide edge coupler provides better power handling and fabrication tolerance than silicon waveguide edge couplers, despite the location under various BEOL layers. The PIC can also include silicon waveguide edger coupler(s).

公开(公告)号：US20220247148A1

公开(公告)日：2022-08-04

申请号：US17167201

申请日：2021-02-04

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Michal Rakowski ,  Kenneth J. Giewont ,  Karen A. Nummy

IPC: H01S5/026 ,  H01S5/30 ,  H01S5/323

Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

公开(公告)号：US11378743B1

公开(公告)日：2022-07-05

申请号：US17146864

申请日：2021-01-12

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Kenneth J. Giewont ,  Karen Nummy ,  Edward Kiewra ,  Steven M. Shank

IPC: G02B6/122 ,  G02B6/34 ,  G02B6/136 ,  G02B6/12

Abstract: Structures including a grating coupler and methods of fabricating a structure including a grating coupler. The structure includes structure includes a dielectric layer on a substrate, a first waveguide core positioned in a first level over the dielectric layer, and a second waveguide core positioned in a second level over the dielectric layer. The second level differs in elevation above the dielectric layer from the first level. The first waveguide core includes a tapered section. The structure further includes a grating coupler having a plurality of segments positioned in the second level adjacent to the second waveguide core. The segments of the grating coupler and the tapered section of the first waveguide core are positioned in an overlapping arrangement.