公开(公告)号：US10734786B2

公开(公告)日：2020-08-04

申请号：US16292531

申请日：2019-03-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi Hirose ,  Yoshitaka Kurosaka ,  Takahiro Sugiyama ,  Yuu Takiguchi ,  Yoshiro Nomoto

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/42 ,  H01S5/028 ,  H01S5/187

Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.

公开(公告)号：US10700495B2

公开(公告)日：2020-06-30

申请号：US16292531

申请日：2019-03-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi Hirose ,  Yoshitaka Kurosaka ,  Takahiro Sugiyama ,  Yuu Takiguchi ,  Yoshiro Nomoto

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/42 ,  H01S5/028 ,  H01S5/187

Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.

公开(公告)号：US09660415B2

公开(公告)日：2017-05-23

申请号：US14786217

申请日：2014-04-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yuu Takiguchi ,  Yoshiro Nomoto

IPC: H01S5/026 ,  H01S5/183 ,  H01S5/18 ,  H01S5/187 ,  G02F1/1343 ,  G02F1/1335 ,  H01S5/10

CPC classification number: H01S5/0265 ,  G02F1/133603 ,  G02F1/133615 ,  G02F1/13439 ,  H01S5/105 ,  H01S5/18 ,  H01S5/183 ,  H01S5/18302 ,  H01S5/18386 ,  H01S5/187

Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, and a diffraction grating layer 6 which is optically connected to the active layer 4. The spatial light modulator SLM includes a transparent common electrode 25, a plurality of transparent pixel electrodes 21, a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21. A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated by the spatial light modulator SLM, passes therethrough, and is output to the outside.