公开(公告)号：US12116662B2

公开(公告)日：2024-10-15

申请号：US17890913

申请日：2022-08-18

Applicant: HRL Laboratories, LLC

Inventor： Kyung-Ah Son ,  Jeong-Sun Moon ,  Hwa Chang Seo ,  Richard M. Kremer ,  Ryan G. Quarfoth ,  Jack A. Crowell ,  Mariano J. Taboada ,  Joshua M. Doria ,  Terry B. Welch

IPC: C23C14/08 ,  C23C14/35

CPC classification number: C23C14/08 ,  C23C14/35

Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (≥450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (

公开(公告)号：US11953801B2

公开(公告)日：2024-04-09

申请号：US17206756

申请日：2021-03-19

Applicant: HRL Laboratories, LLC

Inventor： Richard Kremer ,  Kyung-Ah Son ,  Jeong-Sun Moon ,  Ryan Quarfoth

IPC: G02F1/29 ,  G02B27/00 ,  G02F1/01 ,  G02F1/03

CPC classification number: G02F1/292 ,  G02B27/0087 ,  G02F1/0147 ,  G02F1/03 ,  G02F1/0316 ,  G02F1/294 ,  G02F2201/122 ,  G02F2202/06 ,  G02F2203/24

Abstract: A solid state optical beam steering device including a body of electro-optical material wherein the body of electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein the body has a first face and a second face opposite the first face, a first transparent resistive sheet on the first face of the body of electro optic material, wherein the first transparent resistive sheet has a first side and a second side, and a transparent conductor on the second face of the body of electro optic material, wherein the transparent conductor is coupled to the second side of the first transparent resistive sheet.

公开(公告)号：US11788183B2

公开(公告)日：2023-10-17

申请号：US17206927

申请日：2021-03-19

Applicant: HRL Laboratories, LLC

Inventor： Kyung-Ah Son ,  Jeong-Sun Moon ,  Hwa Chang Seo ,  Richard M. Kremer ,  Ryan G. Quarfoth ,  Jack A. Crowell ,  Mariano J. Taboada ,  Joshua M. Doria ,  Terry B. Welch

IPC: C23C14/35 ,  C23C14/08

CPC classification number: C23C14/08 ,  C23C14/35

Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (≥450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (

公开(公告)号：US11569367B1

公开(公告)日：2023-01-31

申请号：US17242276

申请日：2021-04-27

Applicant: HRL Laboratories, LLC

Inventor： Kyung-Ah Son ,  Jeong-Sun Moon ,  Hwa Chang Seo

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/16 ,  H01L29/167 ,  H01L29/786 ,  H01L27/12 ,  H01L21/223 ,  H01L29/40 ,  H01L21/02 ,  H01L29/49

Abstract: A field effect transistor includes a substrate, a passivation layer on the substrate forming a passivated substrate, wherein the passivation layer is inert to XeF2, and a graphene lateral heterostructure field effect transistor (LHFET) on the passivated substrate.

公开(公告)号：US11222959B1

公开(公告)日：2022-01-11

申请号：US15160930

申请日：2016-05-20

Applicant: HRL LABORATORIES LLC

Inventor： Jeong-Sun Moon ,  Hwa Chang Seo

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L29/51 ,  H01L21/02 ,  H01L29/16

Abstract: A Field Effect Transistor (FET) device and a method for manufacturing it are disclosed. The FET device contains a graphene layer, a composite gate dielectric layer disposed above the graphene layer, wherein the composite gate layer is passivated with fluorine, and a metal gate disposed above the composite gate dielectric layer. The method disclosed teaches how to manufacture the FET device.

公开(公告)号：US20210149271A1

公开(公告)日：2021-05-20

申请号：US16951518

申请日：2020-11-18

Applicant: HRL Laboratories, LLC

Inventor： Jeong-Sun Moon ,  Ryan G. Quarfoth ,  Kangmu Lee

IPC: G02F1/295

Abstract: A vertical directional coupler or switch comprising a lower and an upper waveguide, integrated with an optical phase change material disposed between the lower and upper waveguides to control a directional of optical coupling between the lower and upper waveguides.

公开(公告)号：US10096736B1

公开(公告)日：2018-10-09

申请号：US15900738

申请日：2018-02-20

Applicant: HRL Laboratories, LLC

Inventor： Jeong-Sun Moon ,  Hwa Chang Seo

IPC: H01L21/00 ,  H01L31/109 ,  H01L31/02 ,  H01L45/00 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0336 ,  H01L31/0272

Abstract: A photodetector comprising a region of a p-type phase-change chalcogenide material forming a heterojunction with a region of n-type Silicon; wherein the p-type phase-change chalcogenide material comprises one of GeTe and SbTe.

公开(公告)号：US09640680B1

公开(公告)日：2017-05-02

申请号：US14183237

申请日：2014-02-18

Applicant: HRL Laboratories, LLC

Inventor： Kyung-Ah Son ,  Hasan Sharifi ,  Jeong-Sun Moon ,  Wah S. Wong ,  Hwa Chang Seo

IPC: H01L31/0224 ,  H01L27/146

CPC classification number: H01L31/022466 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469 ,  H01L31/022491

Abstract: An optical device includes an optically transparent and electrically conducting conductor including graphene, a network of metal nanowires, or graphene integrated with a network of metal nanowires. The optical device includes a II VI compound semiconductor, a III V compound semiconductor, or InAsSb.

公开(公告)号：US09231213B2

公开(公告)日：2016-01-05

申请号：US14560888

申请日：2014-12-04

Applicant: HRL LABORATORIES LLC

Inventor： Hyok J. Song ,  James H. Schaffner ,  Jeong-Sun Moon ,  Kyung-Ah Son

IPC: H01Q1/38 ,  H05K1/09 ,  H01L21/768 ,  H01L51/44 ,  H01L51/46 ,  H01L51/10 ,  H01L51/30 ,  H01L51/00 ,  H01Q1/12 ,  H01G13/00 ,  H01Q1/28 ,  H01Q1/32 ,  H01Q9/04 ,  H01Q13/10 ,  H05K1/02 ,  H05K1/18 ,  H05K3/46 ,  H05K3/06

CPC classification number: H01L51/0045 ,  H01G13/00 ,  H01L51/0002 ,  H01Q1/1271 ,  H01Q1/28 ,  H01Q1/32 ,  H01Q1/38 ,  H01Q9/0407 ,  H01Q13/10 ,  H05K1/0274 ,  H05K1/09 ,  H05K1/097 ,  H05K1/181 ,  H05K3/06 ,  H05K3/067 ,  H05K3/4644 ,  H05K2201/026

Abstract: An apparatus, system, and/or method are described to enable optically transparent reconfigurable integrated electrical components, such as antennas and RF circuits to be integrated into an optically transparent host platform, such as glass. In one embodiment, an Ag NW film may be configured as a transparent conductor for antennas and/or as interconnects for passive circuit components, such as capacitors or resistors. Ag NW may also be used as transmission lines and/or interconnect overlays for devices. A graphene film may also be configured as active channel material for making active RF devices, such as amplifiers and switches.

公开(公告)号：US11808937B1

公开(公告)日：2023-11-07

申请号：US17512562

申请日：2021-10-27

Applicant: HRL Laboratories, LLC

Inventor： Jeong-Sun Moon ,  Hwa Chang Seo ,  Kyung-Ah Son ,  Kangmu Lee

IPC: G02B26/08 ,  G02B27/09 ,  G02F1/1335

CPC classification number: G02B26/0833 ,  G02B27/0977 ,  G02F1/133553

Abstract: A method of providing a spatial light modulator comprising: providing a substrate; providing a first phase change material cell on the substrate, the first phase change material cell comprising: a first electrical heater on the substrate; a first optical reflector layer on the electrical heater; and a first phase change material layer on the optical reflector layer; and providing at least a second phase change material cell on the substrate, the second phase change material cell comprising: a second electrical heater on the substrate; a second optical reflector layer on the second electrical heater; a second phase change material layer on the second optical reflector layer; and providing a light absorber layer between the first phase change material cell and the second phase change material cell.