Abstract:
A projection objective for a microlithographic projection exposure apparatus. The projection objective can project an image of a mask that can be set in position in an object plane onto a light-sensitive coating layer that can be set in position in an image plane. The projection objective can be designed to operate in an immersion mode, and it can produce at least one intermediate image. The projection objective can include an optical subsystem on the image-plane side which projects the intermediate image into the image plane with an image-plane-side projection ratio having an absolute value of at least 0.3.
Abstract:
The disclosure relates to a method of manufacturing a projection objective, and a projection objective, such as a projection objective configured to be used in a microlithographic process. The method can include defining an initial design for the projection objective and optimizing the design using a merit function. The method can be used in the manufacturing of projection objectives which may be used in a microlithographic process of manufacturing miniaturized devices.
Abstract:
An illumination system for a microlithographic projection exposure apparatus comprises a masking device and a masking objective which projects the masking device onto an image plane. The illumination system further includes an optical correction element having a surface that is either aspherically shaped or supports diffractive structures that have at least substantially the effect of an aspherical surface. This surface is arranged at least approximately in a field plane which precedes the image plane of the masking objective The aspherically acting surface is designed such that a principal ray distribution generated by the illumination system in the image plane matches a principal ray distribution required by a projection objective.
Abstract:
In a method of manufacturing projection objectives including defining an initial design for a projection objective and optimizing the design using a merit function, a set of related projection objectives including a first projection objective and at least one second projection objective is defined. Further, a plurality of merit function components, each of which reflects a particular quality parameter, is defined. One of these merit function components defines a common module requirement requiring that the first projection objective and the second projection objective each include at least one common optical module that is constructed to be substantially identical for the first and the second projection objective. The method results in a set of projection objectives having at least one common optical module. Employing the method in the manufacturing of complex projection objectives, such as projection objectives for microlithography, facilitates the manufacturing process and allows substantial cost savings.
Abstract:
An illumination system and a projection objective of a mask inspection apparatus are provided. During operation of the mask inspection apparatus, the illumination system illuminates a mask with an illumination bundle of rays having a centroid ray that has a direction dependent on the location of the incidence of the illumination bundle of rays on the mask.
Abstract:
The disclosure relates to a microlithographic projection exposure apparatus, such as are used for the production of large-scale integrated electrical circuits and other microstructured components. The disclosure relates in particular to coatings of optical elements in order to increase or reduce the reflectivity.
Abstract:
The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.
Abstract:
An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |β′| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.
Abstract:
An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |β′| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.
Abstract:
In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.