公开(公告)号：US4964006A

公开(公告)日：1990-10-16

申请号：US412365

申请日：1989-09-26

Applicant: Hiroyuki Ota

Inventor： Hiroyuki Ota

IPC: G11B5/53

CPC classification number: G11B5/53

Abstract: A magnetic head device is disclosed which comprises: a head tip including a pair of cores which are confronted with each other in such a manner that the cores are sufficiently spaced away from each other with a magnetic gap fored at one end; a bridge core bridging the pair of cores to allow a magnetic flux to flow out of one of the pair of cores and flow in the other core; and a coil placed in the path of the magnetic flux.

公开(公告)号：US20120018404A1

公开(公告)日：2012-01-26

申请号：US13182907

申请日：2011-07-14

Applicant: Hirofumi MATSUO ,  Kazuaki Mino ,  Hiroyuki Ota ,  Toru Hosen ,  Hironobu Shiroyama

Inventor： Hirofumi MATSUO ,  Kazuaki Mino ,  Hiroyuki Ota ,  Toru Hosen ,  Hironobu Shiroyama

IPC: H01H9/38

CPC classification number: H01H9/542 ,  H01H9/548 ,  H01H33/596

Abstract: A miniaturized direct-current switch with which power loss is reduced when establishing continuity of a direct-current path is provided. The direct-current switch includes an electronic open/close switch inserted in a direct-current path along which a direct current flows in order to make the direct-current path an open circuit or a closed circuit, a parallel mechanical open/close switch connected in parallel to the electronic open/close switch, and a switch control circuit that controls the opening or closing time difference mutually between the parallel mechanical open/close switch and the electronic open/close switch, wherein the switch control circuit makes the parallel mechanical open/close switch a closed circuit a predetermined time after the electronic open/close switch has been made a closed circuit.

Abstract translation: 提供了一种在建立直流路径的连续性时功率损耗减小的小型化直流开关。 直流开关包括插入直流电流流过的直流路径中的电子开关开关，以使直流路径成为开路或闭路，并联机械开闭开关连接 并联于电子打开/关闭开关，以及开关控制电路，其控制并联机械开/关开关和电子开关开关之间相互的打开或关闭时间差，其中开关控制电路使并联机械打开 在电子打开/关闭开关已经闭合之后的预定时间内闭合闭合闭合电路。

公开(公告)号：US20090040656A1

公开(公告)日：2009-02-12

申请号：US12279169

申请日：2007-02-09

Applicant: Hiroyuki Ota ,  Yukihiro Hata ,  Junichiro Saikai ,  Sadamu Kuse

Inventor： Hiroyuki Ota ,  Yukihiro Hata ,  Junichiro Saikai ,  Sadamu Kuse

IPC: G11B15/60

CPC classification number: G11B15/602

Abstract: A magnetic tape apparatus includes a feeding unit for feeding a magnetic tape; a take-up unit for taking up the magnetic tape, a magnetic head disposed the downstream of the feeding unit and the upstream of the winding unit, in a traveling path of the magnetic tape from the feeding unit to the take-up unit, and having the moving magnetic tape abut to the magnetic head; a fixed guide unit disposed adjacent to the magnetic head at least in the upstream on downstream of the traveling direction of the magnetic tape traveling on the traveling path toward the magnetic head and guiding the magnetic tape to the traveling path by abutting to the magnetic tape; and a controlling unit disposed on the fixed guide unit for controlling the movement of the magnetic tape in the tape width direction. On a contact surface which abuts on the magnetic tape in the fixed guide unit, there is provided a space for excluding the air lying between the moving magnetic tape and the contact surface.

Abstract translation: 磁带装置包括用于馈送磁带的馈送单元; 用于卷取磁带的卷取单元，在进给单元到卷取单元的磁带的行进路径中设置在进给单元的下游和卷绕单元的上游的磁头，以及 使移动的磁带与磁头相邻; 固定引导单元，至少在行进路径上朝向磁头行进的磁带的行进方向的下游的上游侧，与磁头相邻配置，并通过与磁带抵接而将磁带引导到行进路径; 以及控制单元，其设置在固定引导单元上，用于控制磁带在带宽度方向上的移动。 在与固定导向单元中的磁带抵接的接触表面上设置有用于排除位于移动磁带和接触表面之间的空气的空间。

公开(公告)号：US07434992B2

公开(公告)日：2008-10-14

申请号：US10875682

申请日：2004-06-25

Applicant: Makoto Tabata ,  Hiroyuki Ota ,  Yoshihide Onishi ,  Yoshihiko Ogura ,  Tetsuya Sato ,  Taiga Sato

Inventor： Makoto Tabata ,  Hiroyuki Ota ,  Yoshihide Onishi ,  Yoshihiko Ogura ,  Tetsuya Sato ,  Taiga Sato

IPC: G01K3/00 ,  G01J5/00

CPC classification number: G01J5/02 ,  A61B5/01 ,  G01J5/021 ,  G01J5/025 ,  G01J5/026 ,  G01J5/04 ,  G01J5/045 ,  G01J5/049 ,  G01J5/12 ,  G01J5/16 ,  G01J5/522 ,  G01J2005/068

Abstract: A first thermistor 8 and a second thermistor 9 are arranged forwardly and rearwardly of a thermopile sensor 5. A thermopile chip 55 is arranged and interposed between the first thermistor 8 and an integrated thermistor 57. A sensor cover is mounted in contact with front and side portions of a can portion 59 of a thermopile casing 56. A temperature or a radiant quantity of infrared rays on the front portion of the can portion is estimated from a temperature change of the integrated thermistor per second.

公开(公告)号：US20070169141A1

公开(公告)日：2007-07-19

申请号：US11453909

申请日：2006-06-16

Applicant: Tetsuji Hasegawa ,  Hiroyuki Ota

Inventor： Tetsuji Hasegawa ,  Hiroyuki Ota

IPC: G11B7/24

CPC classification number: G11B23/046 ,  G11B23/031

Abstract: In information recording medium of the present invention, a medium unit on which information signals are recorded is placed in an inner space of a main-body case, and an inherent marking for representing specific data for the medium unit is provided on the medium unit.

Abstract translation: 在本发明的信息记录介质中，将记录有信息信号的介质单元放置在主体外壳的内部空间中，并且在介质单元上设置用于表示介质单元的特定数据的固有标记。

公开(公告)号：US07211480B2

公开(公告)日：2007-05-01

申请号：US10882260

申请日：2004-07-02

Applicant: Kengo Inoue ,  Hiroyuki Ota

Inventor： Kengo Inoue ,  Hiroyuki Ota

IPC: H01L21/8238

CPC classification number: H01L21/76232 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/823878 ,  H01L29/7833

Abstract: A semiconductor device manufacturing method includes the steps of: (a) forming a stopper layer for chemical mechanical polishing on a surface of a semiconductor substrate; (b) forming an element isolation trench in the stopper layer and the semiconductor substrate; (c) depositing a nitride film covering an inner surface of the trench; (d) depositing a first oxide film through high density plasma CVD, the first oxide film burying at least a lower portion of the trench deposited with the nitride film; (e) washing out the first oxide film on a side wall of the trench by dilute hydrofluoric acid; (f) depositing a second oxide film by high density plasma CVD, the second oxide film burying the trench after the washing-out; and (g) removing the oxide films on the stopper layer by chemical mechanical polishing.

Abstract translation: 半导体器件制造方法包括以下步骤：（a）在半导体衬底的表面上形成用于化学机械抛光的阻挡层; （b）在所述阻挡层和半导体衬底中形成元件隔离沟槽; （c）沉积覆盖所述沟槽的内表面的氮化物膜; （d）通过高密度等离子体CVD沉积第一氧化物膜，第一氧化膜埋入沉积有氮化物膜的沟槽的至少下部; （e）通过稀氢氟酸在沟槽的侧壁上洗出第一氧化膜; （f）通过高密度等离子体CVD沉积第二氧化膜，第二氧化膜在洗出之后埋入沟槽; 和（g）通过化学机械抛光去除阻挡层上的氧化物膜。

公开(公告)号：US06748001B1

公开(公告)日：2004-06-08

申请号：US09516731

申请日：2000-03-01

Applicant: Mitsuru Nishitsuka ,  Hiroyuki Ota ,  Kiyofumi Chikuma

Inventor： Mitsuru Nishitsuka ,  Hiroyuki Ota ,  Kiyofumi Chikuma

IPC: H01S500

CPC classification number: G11B7/1275 ,  G11B2007/0006 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32316 ,  H01S5/32341 ,  H01S5/4025 ,  H01S5/405 ,  H01S5/4087

Abstract: An object of the present invention is to provide a semiconductor laser device which is capable of selectively emitting two kinds of laser light of light emitting characteristics differing in wavelength, light emission point, beam shape, light emission power, longitudinal mode and so on, by switching the direction of the voltage applied to the device. There is provided the semiconductor laser device including first and second laser units, each unit having a ridge type structure and each unit comprising a multilayer structure body made of at least an n-type semiconductor layer, an active layer and a p-type semiconductor layer deposited in this order, and a p-side electrode and an n-side electrode, wherein the p-side electrode and the n-side electrode of the first laser unit and the n-side electrode and the p-side electrode of the second laser unit are electrically connected, respectively.

Abstract translation: 本发明的目的是提供一种能够选择性地发射波长不同，发光点，光束形状，发光功率，纵向模式等的发光特性的两种激光的半导体激光装置，其中， 切换施加到设备的电压的方向。 提供了包括第一和第二激光单元的半导体激光装置，每个单元具有脊型结构，并且每个单元包括由至少n型半导体层，有源层和p型半导体层制成的多层结构体 以及p侧电极和n侧电极，其中第一激光单元的p侧电极和n侧电极以及第二激光单元的n侧电极和p侧电极 激光单元分别电连接。

公开(公告)号：US06584426B2

公开(公告)日：2003-06-24

申请号：US09426905

申请日：1999-10-26

Applicant: Hiroyuki Ota

Inventor： Hiroyuki Ota

IPC: G06F1500

CPC classification number: G01J5/04 ,  G01J5/02 ,  G01J5/021 ,  G01J5/027 ,  G01J5/049 ,  G01J5/16 ,  G01J2005/0048 ,  G01J2005/068

Abstract: An electronic thermometer including a probe to be inserted in to a portion of an outer ear to be measured by the thermometer, an infrared quantity detection means for detecting an infrared radiation quantity which is entered through the probe, a temperature computation means for applying the detected infrared radiation quantity in a predetermined computation expression to compute out a temperature such as body temperature, an infrared transmission data reading means for taking data corresponding to an infrared transmission quantity passing through the probe, and a control means for controlling the computation expression according to the taken data corresponding to the infrared transmission quantity.

Abstract translation: 一种电子温度计，包括插入到由所述温度计测量的外耳的一部分的探针，用于检测通过所述探针进入的红外线辐射量的红外线量检测装置，用于施加所检测到的红外线辐射量的温度计算装置 红外线传输数据读取装置，用于获取与通过探头的红外线传输量相对应的数据的红外线发射数据读取装置，以及控制装置， 拍摄对应于红外线传输量的数据。

公开(公告)号：US06537839B2

公开(公告)日：2003-03-25

申请号：US09987948

申请日：2001-11-16

Applicant: Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

Inventor： Hiroyuki Ota ,  Mitsuru Nishitsuka ,  Hirokazu Takahashi

IPC: H01L2100

CPC classification number: H01L33/02 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/10 ,  H01S5/2081 ,  H01S5/32341

Abstract: A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by depositing group-3 nitride semiconductors, and a barrier layer disposed adjacent to the active layer and having a greater bandgap than that of the active layer, the active layer having barrier portions which surround the threading dislocations and are defined by interfaces enclosing the threading dislocation and which are made of the same material as that of the barrier layer.

Abstract translation: 氮化物半导体发光器件即使致密的穿透位错延伸穿过单晶层，也具有优选的发光特性。氮化物半导体发光器件包括通过沉积III族氮化物半导体而获得的有源层和与活性物质相邻设置的势垒层 并且具有比有源层的带隙更大的带隙，所述有源层具有围绕穿透位错的阻挡部分，并且由包围穿透位错的界面限定，并且由与阻挡层的材料相同的材料制成。

公开(公告)号：US06442184B1

公开(公告)日：2002-08-27

申请号：US09459471

申请日：1999-12-13

Applicant: Hiroyuki Ota ,  Atsushi Watanabe ,  Toshiyuki Tanaka

Inventor： Hiroyuki Ota ,  Atsushi Watanabe ,  Toshiyuki Tanaka

IPC: H01S500

CPC classification number: H01L33/007 ,  H01L33/22 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/32341

Abstract: A semiconductor light emitting device having multi-layer structure of group-3 nitride-based semiconductors is disclosed. The light emitting device has lower density of threading dislocation extending from a boundary of a crystal substrate through the multi-layer structure, thereby obtaining good luminescence characteristics. The nitride semiconductor light emitting device has the multi-layer structure. The multi-layer structure comprises a first crystal layer containing substantially pyramidal crystal grains, each of grains has a crystal face non-parallel to a surface of the substrate, and the pyramidal crystal grains are distributed at random like islands. The structure further comprises a second crystal layer formed on the first crystal layer with a compound having a different lattice constant from that of the first crystal layer. The second crystal layer smoothes a surface of the first crystal layer parallel to the surface of the substrate.

Abstract translation: 公开了一种具有III族氮化物基半导体的多层结构的半导体发光器件。 发光器件具有从晶体衬底的边界通过多层结构延伸的穿透位错的较低密度，从而获得良好的发光特性。 氮化物半导体发光器件具有多层结构。 多层结构包括含有大致锥形晶粒的第一晶体层，每个晶粒具有不平行于衬底表面的晶面，并且金字塔形晶粒以岛状随机分布。 该结构还包括在第一晶体层上形成具有与第一晶体层不同的晶格常数的化合物的第二晶体层。 第二晶体层使平行于衬底表面的第一晶体层的表面平滑。