公开(公告)号：US10056253B2

公开(公告)日：2018-08-21

申请号：US15616198

申请日：2017-06-07

Applicant: IMEC VZW

Inventor： Annelies Delabie ,  Silvia Armini

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L21/441 ,  H01L29/24

CPC classification number: H01L21/02568 ,  H01L21/02485 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/441 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: Embodiments described herein include a method for forming a vertical hetero-stack and a device including a vertical hetero-stack. An example method is used to form a vertical hetero-stack of a first nanostructure and a second nanostructure arranged on an upper surface of the first nanostructure. The first nanostructure is formed by a first transition metal dichalcogenide, TMDC, material and the second nanostructure is formed by a second TMDC material. The example method includes providing the first nanostructure on a substrate. The method also includes forming a reactive layer of molecules on the first nanostructure along a periphery of the upper surface. The method further includes forming the second nanostructure by a vapor deposition process. The second TMDC material nucleates on the reactive layer of molecules along the periphery and grows laterally therefrom to form the second nanostructure on the upper surface.

公开(公告)号：US20170352766A1

公开(公告)日：2017-12-07

申请号：US15616198

申请日：2017-06-07

Applicant: IMEC VZW

Inventor： Annelies Delabie ,  Silvia Armini

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/441 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L21/02568 ,  H01L21/02485 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/441 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: Embodiments described herein include a method for forming a vertical hetero-stack and a device including a vertical hetero-stack. An example method is used to form a vertical hetero-stack of a first nanostructure and a second nanostructure arranged on an upper surface of the first nanostructure. The first nanostructure is formed by a first transition metal dichalcogenide, TMDC, material and the second nanostructure is formed by a second TMDC material. The example method includes providing the first nanostructure on a substrate. The method also includes forming a reactive layer of molecules on the first nanostructure along a periphery of the upper surface. The method further includes forming the second nanostructure by a vapor deposition process. The second TMDC material nucleates on the reactive layer of molecules along the periphery and grows laterally therefrom to form the second nanostructure on the upper surface.

公开(公告)号：US09589896B2

公开(公告)日：2017-03-07

申请号：US15067033

申请日：2016-03-10

Applicant: IMEC VZW

Inventor： Silvia Armini

IPC: H01L21/00 ,  H01L23/532 ,  C23C18/12 ,  C23C18/20 ,  H01L21/768

CPC classification number: H01L23/53238 ,  C23C18/12 ,  C23C18/20 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76862 ,  H01L21/76874

Abstract: An electronic circuit structure comprising a substrate, a dielectric layer on top of the substrate and comprising a cavity having side-walls, a manganese or manganese nitride layer covering the side-walls, and a self-assembled monolayer, comprising an organic compound of formula Z-L-A, covering the manganese or manganese nitride layer, wherein Z is selected from the list consisting of a primary amino group, a carboxylic acid group, a thiol group, a selenol group and a heterocyclic group having an unsubstituted tertiary amine in the cycle, wherein L is an organic linker comprising from 1 to 12 carbon atoms and from 0 to 3 heteroatoms, and wherein A is a group attaching the linker to the manganese or manganese nitride layer.

Abstract translation: 一种电子电路结构，包括基底，位于基底顶部的电介质层，包括具有侧壁的空腔，覆盖侧壁的锰或氮化锰层，以及自组装单层，其包含式 ZLA，覆盖锰或氮化锰层，其中Z选自伯胺基，羧酸基，硫醇基，硒酚基和在该循环中具有未取代的叔胺的杂环基，其中 L是包含1至12个碳原子和0至3个杂原子的有机连接体，其中A是将连接体连接到锰或氮化锰层的基团。

公开(公告)号：US20150170910A1

公开(公告)日：2015-06-18

申请号：US14555356

申请日：2014-11-26

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Quoc Toan Le ,  Mikhail Baklanov ,  Yiting Sun ,  Silvia Armini

IPC: H01L21/02

CPC classification number: H01L21/02359 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02343 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method is provided for activating an exposed surface of a porous dielectric layer, the method comprising the steps of: filling with a first liquid at least the pores present in a part of the porous dielectric layer, the part comprising the exposed surface, removing the first liquid selectively from the surface, activating the exposed surface, and removing the first liquid from the bulk part of the porous dielectric layer.

Abstract translation: 提供一种用于激活多孔电介质层的暴露表面的方法，该方法包括以下步骤：至少填充第一液体至少存在于多孔电介质层的一部分中的孔，该部分包括暴露表面，去除 第一液体从表面选择性地起作用，激活暴露的表面，以及从多孔介电层的本体部分去除第一液体。