公开(公告)号：US09275916B2

公开(公告)日：2016-03-01

申请号：US13886283

申请日：2013-05-03

Applicant: Infineon Technologies AG

Inventor： Edward Fuergut ,  Irmgard Escher-Poeppel ,  Manfred Engelhardt ,  Hans-Joerg Timme ,  Hannes Eder

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/784 ,  H01L23/00 ,  H01L21/683 ,  H01L21/56

CPC classification number: H01L22/24 ,  H01L21/568 ,  H01L21/67069 ,  H01L21/67253 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/784 ,  H01L22/12 ,  H01L22/26 ,  H01L22/30 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/94 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2224/82 ,  H01L2924/00

Abstract: A method of processing a plurality of packaged electronic chips being connected to one another in a common substrate is provided, wherein the method comprises etching the electronic chips, detecting information indicative of an at least partial removal of an indicator structure following an exposure of the indicator structure embedded within at least a part of the electronic chips and being exposed after the etching has removed chip material above the indicator structure, and adjusting the processing upon detecting the information indicative of the at least partial removal of the indicator structure.

Abstract translation: 提供一种处理在公共基板中彼此连接的多个封装电子芯片的方法，其中所述方法包括蚀刻所述电子芯片，检测指示在所述指示符的曝光之后至少部分移除指示符结构的信息 嵌入在电子芯片的至少一部分内并且在蚀刻之后暴露出指示器结构之上的芯片材料的结构，以及在检测到指示结构的至少部分移除的信息时调整处理。

公开(公告)号：US09117748B2

公开(公告)日：2015-08-25

申请号：US13754986

申请日：2013-01-31

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Guenther Ruhl ,  Hans-Joerg Timme

IPC: H01L29/06 ,  H01L47/00 ,  H01L27/24 ,  H01L45/00 ,  H01L23/427 ,  H01L29/43 ,  H01L23/62 ,  H01L29/78 ,  H01L29/861 ,  H01L23/525

CPC classification number: H01L27/0251 ,  H01L23/367 ,  H01L23/3738 ,  H01L23/427 ,  H01L23/4275 ,  H01L23/49562 ,  H01L23/525 ,  H01L23/62 ,  H01L24/32 ,  H01L27/24 ,  H01L27/2436 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/41725 ,  H01L29/42376 ,  H01L29/435 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7801 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/861 ,  H01L29/8611 ,  H01L45/128 ,  H01L2224/32245 ,  H01L2924/0002 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/00

Abstract: A semiconductor device includes a transistor including a plurality of transistor cells in a semiconductor body, each transistor cell including a control terminal and first and second load terminals. The semiconductor device further includes a first electrical connection electrically connecting the first load terminals. The semiconductor device further includes a second electrical connection electrically connecting the second load terminals. The transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C.

Abstract translation: 半导体器件包括在半导体本体中包括多个晶体管单元的晶体管，每个晶体管单元包括控制端子和第一和第二负载端子。 半导体器件还包括电连接第一负载端子的第一电连接。 半导体器件还包括电连接第二负载端子的第二电连接。 晶体管还包括在150℃和400℃之间的相变温度Tc显示出固相变化的相变材料。

公开(公告)号：US11233493B2

公开(公告)日：2022-01-25

申请号：US15934387

申请日：2018-03-23

Applicant: Infineon Technologies AG

Inventor： Hans-Joerg Timme ,  Carsten Ahrens ,  Ruediger Bauder

IPC: H03H3/02 ,  H03H9/205 ,  H03H9/17 ,  H01L41/277 ,  H03H9/58 ,  H03H9/02

Abstract: Methods for manufacturing resonator structures and corresponding resonator structures are described. A first wafer including a first piezoelectric material is singulated and bonded to a second wafer.

公开(公告)号：US11018652B2

公开(公告)日：2021-05-25

申请号：US16210756

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Hans-Joerg Timme ,  Ruediger Bauder

IPC: H03H9/58 ,  H03H9/54 ,  H03H7/01 ,  H03H9/64 ,  H03H9/52 ,  H03H9/05 ,  H03H9/60 ,  H04B1/00 ,  H03H3/02 ,  H03H11/12 ,  H04B1/10 ,  H04B1/40 ,  H03H9/02 ,  H03H9/17 ,  H03H9/48 ,  H03H9/00 ,  H03H9/66 ,  H04B1/04 ,  H04B1/50 ,  H03H7/12 ,  H03H7/46 ,  H04B1/525 ,  H03F3/19 ,  H03F3/21 ,  H03H9/70 ,  H04B1/18 ,  H03J3/20 ,  H03H9/205 ,  H01L41/187 ,  H03J1/00

Abstract: A resonator element for use in a filter is provided. The resonator element includes a first resonator acoustically coupled to a second or third resonator or both. The first resonator has terminals for incorporation in a filter structure. A tuning circuit is coupled to the second or third resonator or both to enable tuning of the resonator element. The tuning circuit includes a variable capacitor and an inductor.

公开(公告)号：US11005451B2

公开(公告)日：2021-05-11

申请号：US16210732

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Ruediger Bauder ,  Andreas Bogner ,  Hans-Joerg Timme

IPC: H03H9/58 ,  H03H9/02 ,  H03H7/01 ,  H03H9/54 ,  H03H9/64 ,  H03H9/52 ,  H03H9/05 ,  H03H9/60 ,  H04B1/00 ,  H03H3/02 ,  H03H11/12 ,  H04B1/10 ,  H04B1/40 ,  H03H9/17 ,  H03H9/48 ,  H03H9/00 ,  H03H9/66 ,  H04B1/04 ,  H04B1/50 ,  H03H7/12 ,  H03H7/46 ,  H04B1/525 ,  H03F3/19 ,  H03F3/21 ,  H03H9/70 ,  H04B1/18 ,  H03J3/20 ,  H03H9/205 ,  H01L41/187 ,  H03J1/00

Abstract: A bandpass filter includes a capacitor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground.

公开(公告)号：US20190181907A1

公开(公告)日：2019-06-13

申请号：US16210582

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Peter Pfann ,  Stefan Helmut Schmalzl ,  Ruediger Bauder ,  Hans-Joerg Timme

IPC: H04B1/50 ,  H04B1/04 ,  H04B1/00 ,  H03H9/48

Abstract: In accordance with an embodiment, a method of operating an RF system includes generating a first RF signal having a first frequency; filtering the generated first RF signal to form a first filtered transmitted signal; producing a first coupled signal and a first transmitted signal from the first filtered transmitted signal; transmitting the first transmitted signal; transmitting a second RF signal having a second frequency; bandpass filtering the first coupled signal to form a first tunable bandpass filtered signal; and measuring a parameter of the first tunable bandpass filtered signal.

公开(公告)号：US20190181839A1

公开(公告)日：2019-06-13

申请号：US16210555

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Ruediger Bauder ,  Hans-Joerg Timme ,  Stefan Helmut Schmalzl ,  Peter Pfann

IPC: H03H11/12 ,  H04B1/10 ,  H04B1/40

Abstract: In accordance with an embodiment, a method of operating an RF system includes filtering a first wideband RF signal using a wideband filter bank. Filtering the first RF signal includes separating the first wideband RF signal into frequency cluster signals, where each frequency cluster signal of the frequency cluster signals includes different frequency ranges, the first wideband RF signal includes multiple RF bands, and each of the different frequency ranges comprises a plurality of RF bands of the multiple RF bands. The method further includes band stop filtering at least one of the frequency cluster signals to produce a band stopped frequency cluster signal.

公开(公告)号：US20190181824A1

公开(公告)日：2019-06-13

申请号：US16210788

申请日：2018-12-05

Applicant: Infineon Technologies AG

Inventor： Hans-Joerg Timme ,  Ruediger Bauder

IPC: H03H7/01 ,  H03H9/52 ,  H03H9/64 ,  H03H9/54

Abstract: A resonator element for use in a filter is provided. The resonator element includes a first resonator acoustically coupled to a second or third resonator or both. The first resonator has terminals for incorporation in a filter structure. A tuning circuit is coupled to the second or third resonator or both to enable tuning of the resonator element. The tuning circuit includes a variable capacitor and an inductor.

公开(公告)号：US20180301444A1

公开(公告)日：2018-10-18

申请号：US15952282

申请日：2018-04-13

Applicant: Infineon Technologies AG

Inventor： Alexander Roth ,  Juergen Hoegerl ,  Hans-Joachim Schulze ,  Hans-Joerg Timme

IPC: H01L25/00 ,  H01L23/14 ,  H01L23/373 ,  H01L21/48 ,  H01L25/16 ,  H01L25/18 ,  H01L23/495 ,  H01L21/56 ,  H01L23/31

Abstract: A module is disclosed. In one example, the module includes a carrier, an at least partially thermally conductive and electrically insulating body mounted on only a part of a main surface of the carrier, an at least partially electrically conductive redistribution structure on the thermally conductive and electrically insulating body, an electronic chip mounted on the redistribution structure and above the thermally conductive and electrically insulating body, and an encapsulant encapsulating at least part of the carrier, at least part of the thermally conductive and electrically insulating body, at least part of the redistribution structure, and at least part of the electronic chip.

公开(公告)号：US20180269847A1

公开(公告)日：2018-09-20

申请号：US15919950

申请日：2018-03-13

Applicant: Infineon Technologies AG

Inventor： Jonathan Binder ,  Ruediger Bauder ,  Hans-Joerg Timme

IPC: H03H9/54 ,  H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H3/02 ,  H01L41/18 ,  H01L41/29 ,  H01L41/35

CPC classification number: H03H9/02086 ,  B60T17/085 ,  F16D55/02 ,  F16D65/18 ,  H01L41/18 ,  H01L41/29 ,  H01L41/35 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54

Abstract: A resonator is described including a piezoelectric material with first and second electrodes provided on the piezoelectric material. An acoustic metamaterial at least partially surrounds an active region of the resonator.