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公开(公告)号：US20210083625A1
公开(公告)日：2021-03-18
申请号：US17035896
申请日：2020-09-29
Applicant: Innovative Micro Technology
Inventor： Christopher S. GUDEMAN , Abbas Abbaspour Tamijani
Abstract: Systems and methods for forming a mm wave resonant filter include a lithographically fabricated high Q resonant structure. The resonant structure may include a plurality of cavities, each cavity having a characteristic frequency that defines its passband. A filter may include a plurality of resonant structures, and each resonant structure may include a plurality of cavities. These cavities and filters may be fabricated lithographically.
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公开(公告)号：US20210017017A1
公开(公告)日：2021-01-21
申请号：US16515943
申请日：2019-07-18
Applicant: Innovative Micro Technology
Inventor： Christopher S. GUDEMAN , Paul RUBEL
IPC: B81B3/00
Abstract: Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. A two-fold symmetric switch may be formed by a primary, secondary, and optionally tertiary set of voids formed in the movable plate. These voids may define the spring beams which provide a stable and reliable restoring force to the switch.
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公开(公告)号：US20190173153A1
公开(公告)日：2019-06-06
申请号：US16261489
申请日：2019-01-29
Applicant: Innovative Micro Technology
Inventor： Christopher S. GUDEMAN
Abstract: Systems and methods for forming a mm wave resonant filter include a lithographically fabricated high Q resonant structure. The resonant structure may include a plurality of cavities, each cavity having a characteristic frequency that defines its passband. A filter may include a plurality of resonant structures, and each resonant structure may include a plurality of cavities. These cavities and filters may be fabricated lithographically.
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公开(公告)号：US20190088598A1
公开(公告)日：2019-03-21
申请号：US15710969
申请日：2017-09-21
Applicant: Innovative Micro Technology
Inventor： Christopher S. GUDEMAN , Jamie Yao
IPC: H01L23/535 , H01L21/768
Abstract: A device and method for forming through silicon vias (TSVs) in a composite substrate is disclosed. The through substrate via may include an embedded insulating etch stop layer sandwiched between a first and a second substrate layers. The via may include at least one hole formed in the first substrate layer down to the embedded insulating etch stop layer, an insulator formed onto the walls of the at least one hole, a conductive material disposed in the at least one hole, a trench etched into the second substrate layer on the obverse side of the composite substrate through the second substrate material and through the embedded insulating etch stop layer, directly opposite the at least one hole, and a first metal pad formed over the at least one hole and at the bottom of the trench.
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公开(公告)号：US20190068120A1
公开(公告)日：2019-02-28
申请号：US16104146
申请日：2018-08-17
Applicant: Innovative Micro Technology
Inventor： Christopher S. GUDEMAN , Abbaspour Tamijani
Abstract: Systems and methods for forming a compact gas sensor include using a lithographically fabricated high Q resonator coupled to at least one of a Gunn diode and an IMPATT diode. The resonator may include a plurality of cavities filled with a sample gas. A detector coupled to the resonator may measure the amplitude of the emitted mm wave radiation.
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Patent Agency Ranking
公开(公告)号：US20190066937A1
公开(公告)日：2019-02-28
申请号：US16104145
申请日：2018-08-17
Applicant: Innovative Micro Technology
Inventor： Christopher S. GUDEMAN , Marin SIGURDSON
Abstract: Systems and methods for forming a magnetostatic MEMS switch include forming a movable beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. A shunt bar on the movable plate may close the switch when lowered onto the contacts. The switch may generally be closed, with the shunt bar resting on the contacts. However, a magnetically permeable material may also be inlaid into the movable plate. The switch may then be opened by placing either a permanent magnet or an electromagnet in proximity to the switch.
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公开(公告)号：US20180124913A1
公开(公告)日：2018-05-03
申请号：US15800130
申请日：2017-11-01
Applicant: Innovative Micro Technology
Inventor： Christopher S. GUDEMAN
Abstract: We describe below a structure and process that uses through-silicon-vias and wafer-to-wafer bonding to create transmission lines. The method may require one electroplating step, 3 etch steps, 4 lithography steps, one grind and polish step, and one wafer bonding step, totaling ten process steps per transmission line layer.
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公开(公告)号：US20180075994A1
公开(公告)日：2018-03-15
申请号：US15698819
申请日：2017-09-08
Applicant: Innovative Micro Technology
Inventor： Christopher S. GUDEMAN
CPC classification number: H01H59/0009 , H01H49/00 , H01H2001/0052 , H01H2201/024 , H01H2229/016
Abstract: Systems and methods for forming an electrostatic MEMS switch that is used to hot switch a source of current or voltage. At least one surface of the MEMS switch is treated with an ion milling machine to reduce surface roughness to less than about 10 nm rms.
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公开(公告)号：US20170334712A1
公开(公告)日：2017-11-23
申请号：US15634230
申请日：2017-06-27
Applicant: Innovative Micro Technology
Inventor： Christopher S. GUDEMAN , Paul J. RUBEL
CPC classification number: B81B7/0058 , B23K20/023 , B32B9/041 , B32B2457/00 , B81C1/00269 , B81C2203/0118 , B81C2203/037
Abstract: A method for bonding two substrates is described, comprising providing a first and a second silicon substrate, providing a raised feature on at least one of the first and the second silicon substrate, forming a layer of gold on the first and the second silicon substrates, and pressing the first substrate against the second substrate, to form a thermocompression bond around the raised feature. The high initial pressure caused by the raised feature on the opposing surface provides for a hermetic bond without fracture of the raised feature, while the complete embedding of the raised feature into the opposing surface allows for the two bonding planes to come into contact. This large contact area provides for high strength.
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公开(公告)号：US20170217767A1
公开(公告)日：2017-08-03
申请号：US15415919
申请日：2017-01-26
Applicant: Innovative Micro Technology
Inventor： Christopher S. GUDEMAN , Stuart Hutchinson
IPC: B81C1/00
CPC classification number: B81C1/00301 , B81C1/00095
Abstract: A through substrate via is formed by disposing a quantity of solder material at the top of a through hole formed in a substrate, coating the hole with a wetting layer, and melting the solder material such that it flows into the hole. The solder material may alloy with the wetting layer, freezing upon formation of the alloy. Subsequent processing steps may be performed at temperatures higher than the melting point of the solder material.
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