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公开(公告)号：US20230049280A1
公开(公告)日：2023-02-16
申请号：US17788964
申请日：2020-12-22
Inventor： Tatsuya Tomita , Yohei Nomura , Jun Uzuhashi , Tadakatsu Ohkubo , Kazuhiro Hono
IPC: C22C38/16
Abstract: The present invention is an alloy that contains Fe, B, P, and Cu, and includes a non-crystalline phase and a plurality of crystalline phases formed in the non-crystalline, wherein an average Fe concentration in a whole alloy is 79 atomic % or greater, and wherein a density of Cu clusters when a region with a Cu concentration of 6.0 atomic % or greater among regions with 1.0 nm on a side in atom probe tomography is determined to be a Cu cluster is 0.20×1024/m3.
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22.发明授权公开(公告)号：US10749105B2
公开(公告)日：2020-08-18
申请号：US15939903
申请日：2018-03-29
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Jiamin Chen , Yuya Sakuraba , Jun Liu , Hiroaki Sukegawa , Kazuhiro Hono
Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.
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23.发明授权Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same 有权铁磁隧道结结构和磁阻效应器件和利用其的自旋电子器件公开(公告)号：US08872291B2
公开(公告)日：2014-10-28
申请号：US13627664
申请日：2012-09-26
Applicant: National Institute for Materials Science
Inventor： Hiroaki Sukegawa , Seiji Mitani , Tomohiko Niizeki , Tadakatsu Ohkubo , Kouichiro Inomata , Kazuhiro Hono , Masafumi Shirai , Yoshio Miura , Kazutaka Abe , Shingo Muramoto
CPC classification number: H01L43/10 , H01L27/228 , H01L43/08
Abstract: A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.
Abstract translation: 铁磁隧道结结构，其包括介于第一铁磁层和第二铁磁层之间的第一铁磁层，第二铁磁层和隧道势垒层，其中隧道势垒层包括具有构成元素的结晶非磁性材料 类似于具有尖晶石结构作为稳定相结构的结晶氧化物的那些; 非磁性材料具有空间群Fm-3m或F-43m对称的立方结构，其中尖晶石结构中的原子排列紊乱; 并且立方结构的有效晶格常数大致是尖晶石结构的氧化物的晶格常数的一半。
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24.发明申请Ferromagnetic Tunnel Junction Structure and Magnetoresistive Effect Device and Spintronics Device Utilizing Same 有权铁磁隧道结结构和磁阻效应装置和利用其的自旋电子装置公开(公告)号：US20130221461A1
公开(公告)日：2013-08-29
申请号：US13627664
申请日：2012-09-26
Applicant: National Institute for Materials Science
Inventor： Hiroaki Sukegawa , Seiji Mitani , Tomohiko Niizeki , Tadakatsu Ohkubo , Kouichiro Inomata , Kazuhiro Hono , Masafumi Shirai , Yoshio Miura , Kazutaka Abe , Shingo Muramoto
IPC: H01L29/82
CPC classification number: H01L43/10 , H01L27/228 , H01L43/08
Abstract: A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.
Abstract translation: 铁磁隧道结结构，其包括介于第一铁磁层和第二铁磁层之间的第一铁磁层，第二铁磁层和隧道势垒层，其中隧道势垒层包括具有构成元素的结晶非磁性材料 类似于具有尖晶石结构作为稳定相结构的结晶氧化物的那些; 非磁性材料具有空间群Fm-3m或F-43m对称的立方结构，其中尖晶石结构中的原子排列紊乱; 并且立方结构的有效晶格常数大致是尖晶石结构的氧化物的晶格常数的一半。
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公开(公告)号：US12293893B2
公开(公告)日：2025-05-06
申请号：US18294251
申请日：2022-06-23
Inventor： Hiromitsu Chatani , Daisuke Ishikawa , Jie Tang , Tadakatsu Ohkubo , Shuai Tang , Jun Uzuhashi , Kazuhiro Hono
Abstract: A manufacturing method for an electron source according to the present disclosure includes steps of: (A) cutting out a chip from a block of an electron emission material, (B) fixing a first end portion of the chip to a distal end of a support needle, and (C) sharpening a second end portion of the chip. The step (A) includes forming first and second grooves which constitute first and second surfaces of the chip in the block by irradiating a surface of the block with an ion beam. The first end portion of the chip includes the first surface and the second surface with the surfaces forming an angle α of 10 to 90°. The step (B) includes forming a joint between the distal end of the support needle and the first end portion of the chip.
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Patent Agency Ranking
公开(公告)号：US11739400B2
公开(公告)日：2023-08-29
申请号：US16971406
申请日：2018-08-20
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Ming-Zhe Bian , Taisuke Sasaki , Kazuhiro Hono , Shigeharu Kamado , Taiki Nakata
Abstract: A magnesium alloy of the present invention has a structure, comprising: 0.5-2.0 wt % of Zn; 0.3-0.8 wt % of Ca; at least 0.2 wt % of Zr; and the remainder comprising Mg and unavoidable impurities, wherein a nanometer-sized precipitate comprising Mg, Ca and Zn dispersed on the (0001) plane of a magnesium matrix, thereby achieving both formability and strength in a range of temperatures including room temperature.
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27.发明授权公开(公告)号：US11521645B2
公开(公告)日：2022-12-06
申请号：US17295124
申请日：2019-06-27
Applicant: National Institute for Materials Science
Inventor： Kresna Bondan Fathoni , Yuya Sakuraba , Taisuke Sasaki , Tomoya Nakatani , Yoshio Miura , Kazuhiro Hono
Abstract: The present disclosure provides: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device. The magnetoresistive element comprises a magnetoresistive film including a pair of body centered cubic (bcc) crystal structure CoFe ferromagnetic layers with a (001) crystal orientation, the pair of layers separated by a non-magnetic layer of Cu with bcc crystal structure.
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公开(公告)号：US10199063B2
公开(公告)日：2019-02-05
申请号：US15127527
申请日：2015-03-19
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Hiroaki Sukegawa , Zhenchao Wen , Seiji Mitani , Koichiro Inomata , Takao Furubayashi , Jason Paul Hadorn , Tadakatsu Ohkubo , Kazuhiro Hono , Jungwoo Koo
IPC: G11B5/65 , G11B5/73 , G11B5/84 , G11B5/851 , G11B5/66 , H01F10/30 , H01F10/32 , G11B5/39 , G11C11/16 , H01F10/12
Abstract: Disclosed is a perpendicularly magnetized film structure that uses a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow with high quality, the structure comprising any one substrate (5) of a cubic single crystal substrate having a (001) plane, or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer (6) formed on the substrate (5) from a thin film of a metal having an hcp structure, such as Ru or Re, in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate (5); and a perpendicularly magnetized layer (7) located on the metal underlayer (6) and formed from a cubic material selected from the group consisting of a Co-based Heusler alloy, a cobalt-iron (CoFe) alloy having a bcc structure, and the like, as a constituent material, and grown to have the (001) plane.
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公开(公告)号：US10090090B2
公开(公告)日：2018-10-02
申请号：US15784975
申请日：2017-10-16
Inventor： Hidefumi Kishimoto , Noritsugu Sakuma , Masao Yano , Weibin Cui , Yukiko Takahashi , Kazuhiro Hono
Abstract: The invention provides a nanocomposite magnet, which has achieved high coercive force and high residual magnetization. The magnet is a non-ferromagnetic phase that is intercalated between a hard magnetic phase with a rare-earth magnet composition and a soft magnetic phase, wherein the non-ferromagnetic phase reacts with neither the hard nor soft magnetic phase. A hard magnetic phase contains Nd2Fe14B, a soft magnetic phase contains Fe or Fe2Co, and a non-ferromagnetic phase contains Ta. The thickness of the non-ferromagnetic phase containing Ta is 5 nm or less, and the thickness of the soft magnetic phase containing Fe or Fe2Co is 20 nm or less. Nd, or Pr, or an alloy of Nd and any one of Cu, Ag, Al, Ga, and Pr, or an alloy of Pr and any one of Cu, Ag, Al, and Ga is diffused into a grain boundary phase of the hard magnetic phase of Nd2Fe14B.
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公开(公告)号：US09842636B2
公开(公告)日：2017-12-12
申请号：US15134514
申请日：2016-04-21
Inventor： Hiroaki Sukegawa , Hwachol Lee , Kazuhiro Hono , Seiji Mitani , Tadakatsu Ohkubo , Jun Liu , Shinya Kasai , Kwangseok Kim
CPC classification number: G11C11/161 , H01F10/1933 , H01F10/3286 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Provided is a structure having a perpendicular magnetization film which is an (Mn1-xGax)4N1-y (0
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