公开(公告)号：US11031524B2

公开(公告)日：2021-06-08

申请号：US16730858

申请日：2019-12-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alfred Lell ,  Sven Gerhard

IPC: H01L29/06 ,  H01L21/461 ,  H01L33/00 ,  H01S5/02 ,  H01S5/22 ,  H01L33/20

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a layer structure having an active zone for producing electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess is introduced into the surface of the layer structure, wherein the recess adjoins an end surface of the component, wherein the end surface is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane, wherein the recess has a bottom surface and a lateral surface wherein the lateral surface is arranged substantially perpendicularly to the end surface, wherein the lateral surface is arranged tilted at an angle not equal to 90° to the first plane of the active zone, and wherein the bottom surface is arranged in the region of the first plane of the active zone.

公开(公告)号：US11005005B2

公开(公告)日：2021-05-11

申请号：US16409527

申请日：2019-05-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Harald König ,  Jens Ebbecke ,  Alfred Lell ,  Sven Gerhard ,  Clemens Vierheilig

IPC: H01S5/02 ,  H01L33/08 ,  H01L33/26 ,  H01L33/00

Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body comprising a first region of a first conductive type, an active region, a second region of a second conductive type and a coupling-out surface, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, wherein the coupling-out surface is arranged plane-parallel to the rear surface, and wherein the coupling-out surface and the rear surface of the semiconductor body are produced by an etching process.

公开(公告)号：US10312664B2

公开(公告)日：2019-06-04

申请号：US15517144

申请日：2015-09-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Rumbolz ,  Sven Gerhard

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01L21/762 ,  H01S5/022

Abstract: A method for patterning a sequence of layers and a semiconductor laser device are disclosed. In an embodiment the method creates at least one trench in the sequence of layers by two plasma etching methods. The semiconductor laser device comprises a sequence of layers including a semiconductor material and two trenches in the sequence of layers. The trenches laterally delimit a ridge waveguide. Each of the trenches is delimited on the side facing away from the ridge waveguide by a region of the sequence of layers.

公开(公告)号：US20190052060A1

公开(公告)日：2019-02-14

申请号：US15764411

申请日：2016-09-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Alfred Lell ,  Clemens Vierheilig ,  Andreas Löffler

IPC: H01S5/22 ,  H01S5/30

Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.

公开(公告)号：US20190052055A1

公开(公告)日：2019-02-14

申请号：US16101147

申请日：2018-08-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Christian Rumbolz

IPC: H01S5/10 ,  H01S5/30 ,  H01S5/22

Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence having at least one active layer and a ridge waveguide structure having a ridge extending in a longitudinal direction from a light output surface to a rear side surface and being delimited by ridge side surfaces in a lateral direction perpendicular to a longitudinal direction, wherein the ridge has a first region and a second region adjacent thereto in a vertical direction perpendicular to the longitudinal and lateral directions, wherein the ridge includes a first semiconductor material in the first region and at least one second semiconductor material different from the first semiconductor material in the second region, wherein the ridge has a first width in the first region, and wherein the ridge has a second width in the second region, the second width being larger than the first width.

公开(公告)号：US20180102323A1

公开(公告)日：2018-04-12

申请号：US15566423

申请日：2016-04-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Christian Kurz ,  Sven Gerhard ,  Andreas Löffler ,  Jens Müller

IPC: H01L23/544 ,  H01S5/022

CPC classification number: H01L23/544 ,  H01L33/0095 ,  H01L33/38 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54433 ,  H01L2223/5448 ,  H01L2223/54493 ,  H01S5/02268

Abstract: An arrangement includes a confining layer, a metallization layer and a semiconductor component, wherein the metallization layer is arranged on the semiconductor component, and the confining layer is arranged on the metallization layer, the confining layer spatially establishes a reservoir for the marker material at least partially in a defined manner, the confining layer and the metallization layer include an identical material, and the marker material is arranged in the reservoir of the arrangement.

公开(公告)号：US11128106B2

公开(公告)日：2021-09-21

申请号：US16305908

申请日：2017-06-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Clemens Vierheilig ,  Andreas Löffler ,  Sven Gerhard

IPC: H01S5/40 ,  H01S5/042 ,  H01S5/00 ,  H01S5/02345 ,  H01S5/024 ,  H01S5/22 ,  H01S5/323

Abstract: A method of producing a laser diode bar includes producing a plurality of emitters arranged side by side, emitters each including a semiconductor layer sequence having an active layer that generates laser radiation, a p-contact on a first main surface of the laser diode bar and an n-contact on a second main surface of the laser diode bar opposite the first main surface, testing at least one optical and/or electrical property of the emitters, wherein emitters in which the optical and/or electrical property lies within a predetermined setpoint range are assigned to a group of first emitters, and emitters in which the at least one optical and/or electrical property lies outside the predetermined setpoint range are assigned to a group of second emitters, and electrically contacting first emitters, wherein second emitters are not electrically contacted so that they are not supplied with current during operation of the laser diode bar.

公开(公告)号：US10686296B2

公开(公告)日：2020-06-16

申请号：US15764411

申请日：2016-09-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Alfred Lell ,  Clemens Vierheilig ,  Andreas Löffler

IPC: H01S5/22 ,  H01S5/02 ,  H01S5/30 ,  H01S5/022

Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.

公开(公告)号：US20200161836A1

公开(公告)日：2020-05-21

申请号：US16611372

申请日：2018-06-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC: H01S5/32 ,  H01S5/22 ,  H01S5/323

Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer which has a main extension plane and which, in operation, is adapted to generate light in an active region and to emit light via a light-outcoupling surface, the active region extending from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

公开(公告)号：US10553746B2

公开(公告)日：2020-02-04

申请号：US15531342

申请日：2015-11-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alfred Lell ,  Sven Gerhard

IPC: H01L29/06 ,  H01L21/461 ,  H01L33/00 ,  H01S5/02 ,  H01S5/22 ,  H01L33/20

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a layer structure having an active zone for producing electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess is introduced into the surface of the layer structure, wherein the recess adjoins an end surface of the component, wherein the end surface is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane, wherein the recess has a bottom surface and a lateral surface wherein the lateral surface is arranged substantially perpendicularly to the end surface, wherein the lateral surface is arranged tilted at an angle not equal to 90° to the first plane of the active zone, and wherein the bottom surface is arranged in the region of the first plane of the active zone.