公开(公告)号：US20220037456A1

公开(公告)日：2022-02-03

申请号：US17368721

申请日：2021-07-06

Applicant: Samsung Display Co., Ltd.

Inventor： Geunchul Park ,  Joonseok Park ,  Myounghwa Kim ,  Taesang Kim ,  Yeonkeon Moon ,  Sangwoo Sohn ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L51/56

Abstract: A display apparatus includes a substrate, a first pixel, a second pixel, a first wire set, and a second wire set. The first pixel and the second pixel overlap the substrate and neighbor each other in a first direction. The first wire set extends in a second direction, includes a first conduction line and a first transmission line, and may transfer a first data signal. The first conduction line is positioned between the substrate and the first transmission line and is connected through the first transmission line to the first pixel. The second wire set extends in the second direction, includes a second conduction line and a second transmission line, and may transfer a second data signal. The second conduction line is positioned between the substrate and the second transmission line and electrically connects the second transmission line to the second pixel.

公开(公告)号：US11049929B2

公开(公告)日：2021-06-29

申请号：US16804152

申请日：2020-02-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyungjin Jeon ,  Joonseok Park ,  Soyoung Koo ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Hyungjun Kim ,  Yeonkeon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L29/78 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12 ,  H01L49/02

Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.

公开(公告)号：US10777582B2

公开(公告)日：2020-09-15

申请号：US16120898

申请日：2018-09-04

Applicant: Samsung Display Co., Ltd. ,  Yonsei University Industry Foundation (Yonsei UIF)

Inventor： Taesang Kim ,  Hyunjae Kim ,  Junhyung Lim ,  Youngjun Tak

IPC: H01L27/12 ,  H01L27/32 ,  H01L27/24 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L51/50

Abstract: A method of manufacturing a thin film transistor substrate may include forming a gate electrode on a base substrate, forming a gate insulation layer on the base substrate, the gate insulation layer covering the gate electrode, performing a simultaneous ultraviolet ray irradiation and thermal treatment (SUT) process by irradiating an ultraviolet ray at the gate insulation layer and supplying heat to the gate insulation layer at substantially the same time, forming an active pattern on the gate insulation layer, the active pattern overlapping the gate electrode, and forming a source electrode and a drain electrode on the gate insulation layer, the source electrode and the drain electrode being electrically connected to the active pattern.

公开(公告)号：US10658399B2

公开(公告)日：2020-05-19

申请号：US16515153

申请日：2019-07-18

Applicant: Samsung Display Co., Ltd.

Inventor： Jihun Lim ,  Jaybum Kim ,  Joonseok Park ,  Kyoungseok Son ,  Junhyung Lim

IPC: H01L29/49 ,  H01L29/788 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/66

Abstract: A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.

公开(公告)号：US10340472B2

公开(公告)日：2019-07-02

申请号：US15657369

申请日：2017-07-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Eoksu Kim ,  Kyoungseok Son ,  Junhyung Lim ,  Jihun Lim

IPC: G09G3/32 ,  H01L27/11 ,  H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  G09G3/3233

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US12284883B2

公开(公告)日：2025-04-22

申请号：US18460345

申请日：2023-09-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Eunhyun Kim ,  Eunhye Ko ,  Yeonhong Kim ,  Kyoungwon Lee ,  Sunhee Lee ,  Junhyung Lim

IPC: H10K59/126 ,  H10K59/131 ,  H10K77/10 ,  H10K102/00

Abstract: A display apparatus in which an area of a peripheral area may be reduced while having a simple structure, the display apparatus includes a substrate, a bottom metal layer on the substrate and including a first extension line extending from the peripheral area outside a display area into the display area, a semiconductor layer on the bottom metal layer, a gate layer on the semiconductor layer, a first metal layer on the gate layer, and a second metal layer on the first metal layer and including a first data line extending from the peripheral area into the display area and electrically coupled to the first extension line in the peripheral area.

公开(公告)号：US11908924B2

公开(公告)日：2024-02-20

申请号：US17652843

申请日：2022-02-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Seryeong Kim ,  Junhyung Lim ,  Taesang Kim

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/146 ,  H01L29/04 ,  H01L27/12 ,  H10K59/00 ,  H10K59/121 ,  H10K59/123

CPC classification number: H01L29/6675 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/14692 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869 ,  H10K59/00 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/123

Abstract: A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern incudes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.

公开(公告)号：US11818923B2

公开(公告)日：2023-11-14

申请号：US17353640

申请日：2021-06-21

Applicant: Samsung Display Co., Ltd.

Inventor： Jaybum Kim ,  Myeongho Kim ,  Yeonhong Kim ,  Kyoungseok Son ,  Seungjun Lee ,  Seunghun Lee ,  Junhyung Lim

IPC: H01L27/32 ,  H01L51/56 ,  H10K59/124 ,  H10K71/00 ,  H01L27/12 ,  H10K59/121 ,  H01L25/18 ,  H01L25/16 ,  H10K59/12 ,  H10K59/65

CPC classification number: H10K59/124 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H10K59/1213 ,  H10K59/1216 ,  H10K71/00 ,  H01L25/167 ,  H01L25/18 ,  H10K59/1201 ,  H10K59/121 ,  H10K59/65

Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.

公开(公告)号：US20230209994A1

公开(公告)日：2023-06-29

申请号：US18086797

申请日：2022-12-22

Applicant: Samsung Display Co., Ltd. ,  Postech Research And Business Development Foundation

Inventor： Hyungjun Kim ,  Yongyoung Noh ,  Junhyung Lim ,  Huihui Zhu

IPC: H10K85/50 ,  H10K59/125 ,  H10K71/10

CPC classification number: H10K85/50 ,  H10K59/125 ,  H10K71/10 ,  H10K10/462

Abstract: A thin-film transistor including: a gate electrode; a gate insulating layer that is in contact with the gate electrode; a semiconductor layer insulated from the gate electrode by the gate insulating layer; and a source electrode and a drain electrode that are in contact with the semiconductor layer, wherein the semiconductor layer includes a perovskite compound represented by Formula 1:


[A]2[B][X]6:Z  Formula 1



wherein, in Formula 1,
A includes a monovalent organic-cation, a monovalent inorganic-cation, or a combination thereof,
B includes Sn4+,
X includes a monovalent anion, and
Z includes a metal cation or a metalloid cation.

公开(公告)号：US11678547B2

公开(公告)日：2023-06-13

申请号：US17328026

申请日：2021-05-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyungjin Jeon ,  Joonseok Park ,  Soyoung Koo ,  Myounghwa Kim ,  Eoksu Kim ,  Taesang Kim ,  Hyungjun Kim ,  Yeonkeon Moon ,  Geunchul Park ,  Sangwoo Sohn ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L27/32 ,  H01L29/78 ,  H01L51/52 ,  H01L51/56 ,  H01L27/12 ,  H01L49/02

CPC classification number: H01L27/3279 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1288 ,  H01L28/60 ,  H01L2227/323

Abstract: A display device includes: a substrate; a first thin film transistor and a second thin film transistor arranged over the substrate; a display element connected to the first thin film transistor; a wiring connected to the second thin film transistor and including a first wiring layer and a second wiring layer; a pattern insulating layer arranged between the first wiring layer and the second wiring layer; a planarization layer covering the wiring; and a connection electrode arranged on the planarization layer and connected to the first wiring layer and the second wiring layer respectively through a first contact hole and a second contact hole.