公开(公告)号：US10333035B2

公开(公告)日：2019-06-25

申请号：US15337215

申请日：2016-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Sung Hyun Sim ,  Wan tae Lim ,  Hye Seok Noh ,  Hanul Yoo

IPC: H01L33/50 ,  H01L33/60 ,  H01L27/15

Abstract: A method of manufacturing a light emitting device package is provided. The method includes preparing a film strip including one or more light blocking regions and one or more wavelength conversion regions, preparing light emitting devices, each including one or more light emitting regions, bonding the film strip to the light emitting devices so as to dispose the one or more wavelength conversion regions on the one or more light emitting regions of each of the light emitting devices, and cutting the film strip and the light emitting devices into individual device units.

公开(公告)号：US10217914B2

公开(公告)日：2019-02-26

申请号：US15163204

申请日：2016-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Wan Tae Lim ,  Yong Il Kim ,  Hye Seok Noh ,  Eun Joo Shin ,  Sung Hyun Sim ,  Hanul Yoo

IPC: H01L29/49 ,  H01L33/58 ,  H01L33/50 ,  H01L33/44 ,  H01L33/00 ,  F21Y103/10 ,  F21Y115/10 ,  F21S8/02 ,  F21V23/00 ,  F21K9/275 ,  F21K9/237

Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.

公开(公告)号：US09780260B2

公开(公告)日：2017-10-03

申请号：US14838430

申请日：2015-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook Hwang ,  Han Kyu Seong ,  Nam Goo Cha

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/24 ,  H01L33/08 ,  H01L33/00

CPC classification number: H01L33/24 ,  H01L33/005 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.

公开(公告)号：US09379283B2

公开(公告)日：2016-06-28

申请号：US14165112

申请日：2014-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Geon Wook Yoo ,  Han Kyu Seong

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/18 ,  H01L33/24

CPC classification number: H01L33/20 ,  H01L33/005 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24

Abstract: A method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity type semiconductor. A mask including an etch stop layer is formed on the base layer. A plurality of openings are formed in the mask so as to expose regions of. A plurality of nanocores are formed by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings. The mask is partially removed by using the etch stop layer to expose side portions of the plurality of nanocores. An active layer and a second conductivity type semiconductor layer are sequentially grown on surfaces of the plurality of nanocores.

Abstract translation: 一种制造纳米结构半导体发光器件的方法，包括提供由第一导电型半导体形成的基极层。 在基底层上形成包括蚀刻停止层的掩模。 在掩模中形成多个开口以暴露其中的区域。 通过在基底层的曝光区域上生长第一导电型半导体以填充多个开口来形成多个纳米孔。 通过使用蚀刻停止层来部分地去除掩模以暴露多个纳米孔的侧面部分。 在多个纳米孔的表面上依次生长有源层和第二导电型半导体层。

公开(公告)号：US09142721B2

公开(公告)日：2015-09-22

申请号：US14152465

申请日：2014-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook Hwang ,  Han Kyu Seong ,  Nam Goo Cha

IPC: H01L33/50 ,  H01L33/24 ,  H01L33/08 ,  H01L33/00

CPC classification number: H01L33/24 ,  H01L33/005 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer.

Abstract translation: 一种半导体发光器件，包括：衬底; 由第一导电型半导体制成的基底层，设置在基板上; 多个纳米尺度的发光单元，其设置在所述基底层的上表面的区域中，并且包括从所述基底层的上表面突出的第一导电型纳米半导体层，设置在所述第一导电性的纳米活性层 型纳米半导体层和设置在纳米活性层上的第二导电型纳米半导体层; 以及设置在基层的上表面的不同区域并具有层叠有源层的发光层叠体。

公开(公告)号：US20140209858A1

公开(公告)日：2014-07-31

申请号：US14165082

申请日：2014-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Goo Cha ,  Bong Jin Kuh ,  Han Mei Choi

IPC: H01L33/06 ,  H01L33/20

CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01L33/005 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20

Abstract: A nano-structure semiconductor light emitting device includes a base layer formed of a first conductivity type semiconductor, and a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer. A plurality of nanocores is disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor. An active layer is disposed on surfaces of the plurality of nanocores and positioned above the first insulating layer. A second insulating layer is disposed on the first insulating layer and has a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores. A second conductivity-type semiconductor layer is disposed on the surface of the active layer positioned to be above the second insulating layer.

Abstract translation: 纳米结构半导体发光器件包括由第一导电型半导体形成的基极层和设置在基底层上的第一绝缘层，并且具有暴露基底层的部分区域的多个第一开口。 多个纳米孔设置在基层的露出区域中并由第一导电型半导体形成。 有源层设置在多个纳米孔的表面上并且位于第一绝缘层的上方。 第二绝缘层设置在第一绝缘层上，并且具有围绕多个纳米孔的多个第二开口和设置在多个纳米孔表面上的有源层。 第二导电型半导体层设置在位于第二绝缘层上方的有源层的表面上。