公开(公告)号：US09105361B2

公开(公告)日：2015-08-11

申请号：US13665443

申请日：2012-10-31

Applicant: Seagate Technology LLC

Inventor： YoungPil Kim ,  Rodney Virgil Bowman

IPC: G11C29/00 ,  G11C16/04 ,  G11C5/06 ,  G11C8/08 ,  G11C8/14

CPC classification number: G11C29/702 ,  G11C5/063 ,  G11C8/08 ,  G11C8/14 ,  G11C16/0483 ,  G11C29/804

Abstract: A fault tolerant control line configuration useful in a variety of solid state memories such as but not limited to a flash memory. In accordance with some embodiments, an apparatus includes a plurality of memory cells, and a fault tolerant control line. The control line has an elongated first conductive path connected to each of the plurality of memory cells. An elongated second conductive path is disposed in a parallel, spaced apart relation to the first conductive path. A plurality of conductive support members are interposed between the first and second conductive paths to support the second conductive path above the first conductive path.

Abstract translation: 用于各种固态存储器（例如但不限于闪速存储器）的容错控制线配置。 根据一些实施例，装置包括多个存储器单元和容错控制线。 控制线具有连接到多个存储单元中的每一个的细长的第一导电路径。 细长的第二导电路径以与第一导电路径平行的间隔开的关系设置。 多个导电支撑构件插入在第一和第二导电路径之间以支撑第一导电路径上方的第二导电路径。

公开(公告)号：US20140347923A1

公开(公告)日：2014-11-27

申请号：US13900718

申请日：2013-05-23

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Mai A. Ghaly ,  Rodney Virgil Bowman

IPC: G11C16/34

CPC classification number: G06F11/1008 ,  G06F11/1048 ,  G11C7/14 ,  G11C11/5628 ,  G11C16/3404 ,  G11C16/3495 ,  G11C29/021 ,  G11C29/028

Abstract: A memory controller identifies a predominant type of error of a memory unit of solid state memory cells. An error type differential is calculated. The error type differential is a difference between a number of charge loss errors and a number of charge gain errors of the memory unit. A VT offset error differential is calculated. The VT offset error differential is a difference between a number of errors of the predominant type at a first VT offset and a number of errors of the predominant type at a second VT offset. A VT offset is determined using a ratio of the error type differential and the VT offset error differential.

Abstract translation: 存储器控制器识别固态存储器单元的存储器单元的主要类型的误差。 计算误差类型差分。 误差类型差是电荷损失误差的数量与存储器单元的充电增益误差的数量之差。 计算VT偏移误差差。 VT偏移误差差是在第一VT偏移处的主要类型的错误的数量和在第二VT偏移处的主要类型的错误的数量之间的差。 使用误差类型差和VT偏移误差的比率来确定VT偏移。