公开(公告)号：US20180301872A1

公开(公告)日：2018-10-18

申请号：US15951681

申请日：2018-04-12

Applicant: Sense Photonics, Inc.

Inventor： Scott Burroughs ,  Brent Fisher ,  James Carter

IPC: H01S5/183 ,  H01S5/30 ,  G01S17/02 ,  H01S5/026 ,  H01S5/00

Abstract: A laser diode includes a semiconductor structure having an n-type layer, an active region, and a p-type layer. One of the n-type and p-type layers includes a lasing aperture thereon having an optical axis oriented perpendicular to a surface of the active region between the n-type and p-type layers. First and second contacts are electrically connected to the n-type and p-type layers, respectively. The first and/or second contacts are smaller than the lasing aperture in at least one dimension. Related arrays and methods of fabrication are also discussed.