公开(公告)号：US20170201232A1

公开(公告)日：2017-07-13

申请号：US15331598

申请日：2016-10-21

Applicant: TAIYO YUDEN CO., LTD.

Inventor： Kentaro NAKAMURA ,  Fumiya MATSUKURA ,  Takashi MATSUDA ,  Tsutomu MIYASHITA ,  Jun TSUTSUMI

IPC: H03H9/25 ,  H03H9/02 ,  H03H3/08 ,  H03H9/64

Abstract: An acoustic wave device includes: a piezoelectric substrate; a comb-shaped electrode that is located on the piezoelectric substrate and excites an acoustic wave; and a silicon oxide film that is located on the piezoelectric substrate so as to cover the comb-shaped electrode, and has a total concentration of carbon (C), hydrogen (H), nitrogen (N), and fluorine (F) equal to or less than 3.5 atomic %.

公开(公告)号：US20170170808A1

公开(公告)日：2017-06-15

申请号：US15377868

申请日：2016-12-13

Applicant: TAIYO YUDEN CO., LTD.

Inventor： Masafumi IWAKI ,  Yoshio SATOH ,  Tabito TANAKA ,  Hidetaro NAKAZAWA ,  Takashi MATSUDA ,  Jun TSUTSUMI

IPC: H03H9/25 ,  H03H9/72 ,  H03H9/64

CPC classification number: H03H9/6489 ,  H03H9/02889 ,  H03H9/14532 ,  H03H9/725

Abstract: An acoustic wave resonator includes: a piezoelectric substrate; and an IDT located on the piezoelectric substrate and including a pair of comb-shaped electrodes facing each other, each of the pair of comb-shaped electrodes including a grating electrode exciting an acoustic wave and a bus bar to which the grating electrode is connected, wherein an anisotropy coefficient in a cross region where the grating electrodes of the pair of comb-shaped electrodes cross each other is positive; an anisotropy coefficient in a gap region located between a tip of the grating electrode of one of the pair of comb-shaped electrodes and the bus bar of the other is less than the anisotropy coefficient in the cross region, and an acoustic velocity of an acoustic wave propagating through the gap region is equal to or less than an acoustic velocity of an acoustic wave propagating through the cross region at an antiresonant frequency.

公开(公告)号：US20150256145A1

公开(公告)日：2015-09-10

申请号：US14630191

申请日：2015-02-24

Applicant: TAIYO YUDEN CO., LTD.

Inventor： Takashi MATSUDA

IPC: H03H9/25 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02

CPC classification number: H03H3/08 ,  H03H3/02 ,  H03H9/02834 ,  H03H9/02992 ,  H03H9/131 ,  Y10T29/42

Abstract: An acoustic wave device includes: a piezoelectric substrate; an interdigital electrode that is provided on the piezoelectric substrate and made of a laminated film, an electric resistivity of a material of an uppermost layer in the laminated film being larger than that of a material of a just-under layer located one layer lower than the uppermost layer; and a pad electrode that is provided on the piezoelectric substrate and electrically connected to the interdigital electrode, and has a same film structure as a film structure from a layer on the piezoelectric substrate to the just-under layer in the laminated film of the interdigital electrode, an upper surface of a layer corresponding to the just-under layer being exposed.

Abstract translation: 声波装置包括：压电基板; 设置在压电基板上并由层叠膜构成的交叉指状电极，层叠膜中最上层的材料的电阻率大于位于比下层低的层的材料的电阻率 最上层 以及焊盘电极，其设置在所述压电基板上并电连接到所述叉指电极，并且具有与从所述压电基板上的层到所述交叉指状电极的层叠膜中的刚下层的膜结构相同的膜结构 对应于正下层的层的上表面被暴露。

公开(公告)号：US20140118094A1

公开(公告)日：2014-05-01

申请号：US14041985

申请日：2013-09-30

Applicant: TAIYO YUDEN CO., LTD.

Inventor： Takashi MATSUDA

IPC: H03H9/64

CPC classification number: H03H9/1092 ,  H03H9/1071 ,  H03H9/6433 ,  H03H9/6476 ,  H03H2001/0085

Abstract: An acoustic wave filter includes: multimode filters, each including an IDT, connected in parallel; a ceiling that is commonly located above at least two multimode filters of the multimode filters so as to form a cavity between the IDT and the ceiling, electrically connected to the multimode filters, and formed of a metal; and at least two terminals that are electrically connected to the ceiling and located above the at least two multimode filters.

Abstract translation: 声波滤波器包括：多模滤波器，每个滤波器包括并联的IDT; 通常设置在多模式滤波器的至少两个多模滤波器上方的天花板，以在IDT和天花板之间形成电气连接到多模滤波器并由金属形成的空腔; 以及至少两个电连接到天花板并位于至少两个多模式滤波器上方的端子。