BIASING ISOLATION REGION IN SEMICONDUCTOR SUBSTRATE

    公开(公告)号:US20230335547A1

    公开(公告)日:2023-10-19

    申请号:US18192956

    申请日:2023-03-30

    CPC classification number: H01L27/0629 H01L27/088 H03K17/6872

    Abstract: The present disclosure generally relates to biasing an isolation region in a semiconductor substrate. In an example, an integrated circuit includes a semiconductor substrate, a first rectifying device, and a second rectifying device. The semiconductor substrate has a first region, a second region, and a third region each being an opposite conductivity type from the semiconductor substrate. The first region and the second region are respective current terminals of a transistor. The first rectifying device has a first positive terminal and a first negative terminal. The first positive terminal is coupled to the first region, and the first negative terminal is coupled to the third region. The second rectifying device has a second positive terminal and a second negative terminal. The second positive terminal is coupled to a ground terminal, and the second negative terminal is coupled to the third region.

    LOW POWER IDEAL DIODE CONTROL CIRCUIT
    22.
    发明申请

    公开(公告)号:US20200073426A1

    公开(公告)日:2020-03-05

    申请号:US16678733

    申请日:2019-11-08

    Abstract: In described examples of a circuit that operates as a low-power ideal diode, and an IC chip that contains the ideal diode circuit, the circuit includes: a first P-channel transistor connected to receive an input voltage on a first terminal and to provide an output voltage on a second terminal; a first amplifier connected to receive the input voltage and the output voltage and to provide a first signal that dynamically biases a gate of the first P-channel transistor as a function of the voltage across the first P-channel transistor; and a second amplifier connected to receive the input voltage and the output voltage and to provide a second signal that acts to turn off the gate of the first P-channel transistor responsive to the input voltage being less than the output voltage.

    LOW POWER IDEAL DIODE CONTROL CIRCUIT
    24.
    发明申请

    公开(公告)号:US20170300074A1

    公开(公告)日:2017-10-19

    申请号:US15638892

    申请日:2017-06-30

    CPC classification number: G05F1/575

    Abstract: In described examples of a circuit that operates as a low-power ideal diode, and an IC chip that contains the ideal diode circuit, the circuit includes: a first P-channel transistor connected to receive an input voltage on a first terminal and to provide an output voltage on a second terminal; a first amplifier connected to receive the input voltage and the output voltage and to provide a first signal that dynamically biases a gate of the first P-channel transistor as a function of the voltage across the first P-channel transistor; and a second amplifier connected to receive the input voltage and the output voltage and to provide a second signal that acts to turn off the gate of the first P-channel transistor responsive to the input voltage being less than the output voltage.

    MULTI-SUPPLY OUTPUT CIRCUIT
    25.
    发明申请
    MULTI-SUPPLY OUTPUT CIRCUIT 有权
    多电源输出电路

    公开(公告)号:US20160191057A1

    公开(公告)日:2016-06-30

    申请号:US14969451

    申请日:2015-12-15

    CPC classification number: H03K19/017509 H03K3/356104

    Abstract: Disclosed examples include ICs and general-purpose I/O circuitry to facilitate interfacing of the IC with a variety of external circuits operating at different supply voltages, in which an integer number N supply drive circuits are individually coupled with a corresponding supply voltage node and selectively connect the corresponding supply voltage node to a general-purpose output node based on a supply drive control signal to allow programmable interfacing of individual general-purpose output pads or pins of the IC with an external circuit at the appropriate signal level.

    Abstract translation: 公开的示例包括IC和通用I / O电路,以便于IC与在不同电源电压下工作的各种外部电路的接口,其中整数N个电源驱动电路与相应的电源电压节点单独耦合,并且选择性地 基于供电驱动控制信号将相应的电源节点连接到通用输出节点,以允许各个通用输出板或IC的引脚与适当信号电平的外部电路的可编程接口。

    Low Power Ideal Diode Control Circuit
    26.
    发明申请
    Low Power Ideal Diode Control Circuit 有权
    低功耗理想二极管控制电路

    公开(公告)号:US20160187904A1

    公开(公告)日:2016-06-30

    申请号:US14978532

    申请日:2015-12-22

    CPC classification number: G05F1/575

    Abstract: A circuit that operates as a low-power ideal diode is disclosed, as well as an IC chip that contains the ideal diode circuit. The circuit includes a first P-channel transistor connected to receive an input voltage on a first terminal and to provide an output voltage on a second terminal, a first amplifier connected to receive the input voltage and the output voltage and to provide a first signal that dynamically biases a gate of the first P-channel transistor as a function of the voltage across the first P-channel transistor, and a second amplifier connected to receive the input voltage and the output voltage and to provide a second signal that acts to turn off the gate of the first P-channel transistor responsive to the input voltage being less than the output voltage.

    Abstract translation: 公开了作为低功率理想二极管工作的电路,以及包含理想二极管电路的IC芯片。 该电路包括第一P沟道晶体管,其被连接以接收第一端子上的输入电压并且在第二端子上提供输出电压,第一放大器连接以接收输入电压和输出电压,并提供第一信号, 动态地偏置第一P沟道晶体管的栅极作为第一P沟道晶体管两端的电压的函数,以及第二放大器,其被连接以接收输入电压和输出电压,并提供用于关断的第二信号 响应于输入电压的第一P沟道晶体管的栅极小于输出电压。

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