公开(公告)号：US20190109245A1

公开(公告)日：2019-04-11

申请号：US16212870

申请日：2018-12-07

Applicant: Texas Instruments Incorporated

Inventor： Debarshi Basu ,  Henry Litzmann Edwards ,  Ricky A. Jackson ,  Marco A. Gardner

IPC: H01L31/0232 ,  H01L31/103 ,  G01J1/02 ,  G01J1/42 ,  H01L25/16 ,  G01J1/04

Abstract: An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction. The Fresnel structure is formed above the photodiode, and it defines a focal zone that is positioned within a proximity of the p-n junction. In one aspect, the Fresnel structure may include a trench pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In another aspect, the Fresnel structure may include a wiring pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In yet another aspect, the Fresnel structure may include a transparent dielectric pattern that functions as a refractive means for redirecting and concentrating incident photons to the focal zone.

公开(公告)号：US20170229592A1

公开(公告)日：2017-08-10

申请号：US15017057

申请日：2016-02-05

Applicant: Texas Instruments Incorporated

Inventor： Debarshi Basu ,  Henry Litzmann Edwards ,  Ricky A. Jackson ,  Marco A. Gardner

IPC: H01L31/0232

CPC classification number: H01L31/02327 ,  G01J1/02 ,  G01J1/0209 ,  G01J1/0411 ,  G01J1/42 ,  H01L25/167 ,  H01L31/103

Abstract: An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction. The Fresnel structure is formed above the photodiode, and it defines a focal zone that is positioned within a proximity of the p-n junction. In one aspect, the Fresnel structure may include a trench pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In another aspect, the Fresnel structure may include a wiring pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In yet another aspect, the Fresnel structure may include a transparent dielectric pattern that functions as a refractive means for redirecting and concentrating incident photons to the focal zone.

公开(公告)号：US20160133689A1

公开(公告)日：2016-05-12

申请号：US14931822

申请日：2015-11-03

Applicant: Texas Instruments Incorporated

Inventor： Honglin Guo ,  Tim A. Taylor ,  Jeff A. West ,  Ricky A. Jackson ,  Byron Williams

IPC: H01L49/02 ,  H01L23/29 ,  H01L21/02 ,  H01L23/31

CPC classification number: H01L21/02118 ,  H01G4/14 ,  H01G4/18 ,  H01G4/224 ,  H01G4/236 ,  H01G4/33 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3192 ,  H01L23/564 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L28/40 ,  H01L51/00 ,  H01L2224/02166 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/45099

Abstract: It has been discovered that poor TDDB reliability of microelectronic device capacitors with organic polymer material in the capacitor dielectric is due to water molecules infiltrating the organic polymer material when the microelectronic device is exposed to water vapor in the operating ambient. Water molecule infiltration from water vapor in the ambient is effectively reduced by a moisture barrier comprising a layer of aluminum oxide formed by an atomic layer deposition (ALD) process. A microelectronic device includes a capacitor with organic polymer material in the capacitor dielectric and a moisture barrier with a layer of aluminum oxide formed by an ALD process.

Abstract translation: 已经发现，在电容器电介质中的有机聚合物材料的微电子器件电容器的差的TDDB可靠性是由于当微电子器件在操作环境中暴露于水蒸汽时，水分子渗入有机聚合物材料。 通过包含由原子层沉积（ALD）工艺形成的氧化铝层的防潮屏障，水分子渗入环境中的水蒸气有效地减少。 微电子器件包括在电容器电介质中具有有机聚合物材料的电容器和具有由ALD工艺形成的氧化铝层的防潮层。

公开(公告)号：US20150378127A1

公开(公告)日：2015-12-31

申请号：US14533947

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： YungShan Chang ,  Ricky A. Jackson ,  Jeff W. Ritchison ,  Neng Jiang

IPC: G02B7/04 ,  G02B7/09 ,  B81C1/00 ,  B81B7/02

CPC classification number: B81C1/00523 ,  B81B3/0021 ,  B81B3/0072 ,  B81B7/02 ,  B81C1/00349 ,  B81C2201/0174 ,  G02B13/14 ,  G02B26/06

Abstract: An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.

Abstract translation: 一种装置包括形成透镜的透镜材料。 该装置还包括在透镜材料上的压电电容器，其中压电电容器被配置为响应于压电电容器两端的电压而改变透镜材料的形状，从而改变透镜的焦点。 该装置还包括在透镜材料的一部分上方以及压电电容器的至少一部分上的至少一个应力补偿环。 所述至少一个应力补偿环被配置为至少部分地减少由于在所述透镜材料上或所述透镜材料中的应力引起的所述透镜材料的弯曲。