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    Bearing structure
    24.
    发明申请
    Bearing structure 审中-公开
    轴承结构

    公开(公告)号：US20060115190A1

    公开(公告)日：2006-06-01

    申请号：US11260148

    申请日：2005-10-28

    Applicant: Wen-Cheng Chen ,  Jin-Juh Hsu

    Inventor： Wen-Cheng Chen ,  Jin-Juh Hsu

    IPC: F16C32/06

    CPC classification number: F16C33/107 ,  F16C17/026 ,  F16C33/103

    Abstract: A bearing structure. A bearing is disposed in a bushing and includes a through hole and a slot. The slot receives a lubricant. An inner wall forming the through hole includes at lease one spiral-shaped furrows for guiding the lubricant into the slot. The inner wall of the bearing is divided into a first section and a second section by the slot. The spiral-shaped furrows on the first section and on the second section have different spiral directions for separately guiding the lubricant into the slot. The lubricant received in the slot can be lubricating oil. The bearing structure prevents leakage of the lubricant and effectively retains the lubricant in the bearing.

    Abstract translation: 轴承结构。 轴承设置在衬套中并且包括通孔和槽。 槽接收润滑剂。 形成通孔的内壁至少包括一个用于将润滑剂引导到槽中的螺旋形沟槽。 轴承的内壁由狭槽分为第一部分和第二部分。 第一部分和第二部分上的螺旋形沟槽具有不同的螺旋方向，用于将润滑剂分开引导到槽中。 容纳在槽中的润滑油可以是润滑油。 轴承结构防止润滑剂泄漏并有效地将润滑剂保留在轴承中。

    SHAVING HEAD ASSEMBLY FOR A LINT SHAVER
    28.
    发明申请
    SHAVING HEAD ASSEMBLY FOR A LINT SHAVER 失效
    SHAVING HEAD ASSEMBLY FOR LINT SHAVER

    公开(公告)号：US20050132575A1

    公开(公告)日：2005-06-23

    申请号：US10979495

    申请日：2004-11-01

    Applicant: Wen-Cheng Chen

    Inventor： Wen-Cheng Chen

    IPC: D06C13/00 ,  A47L25/08 ,  B26B19/14 ,  B26B19/28 ,  B26B19/44 ,  B26B19/06

    CPC classification number: A47L25/08 ,  B26B19/14 ,  B26B19/44

    Abstract: A shaving head assembly for a lint shaver includes a transmission shaft rotatably received inside the casing and having a V shaped cutout defined in a distal end of the transmission shaft. The blade assembly has a blade seat with a V shaped extension extending from a bottom of the blade seat to be securely received in the V shaped cutout yet movable relative to the transmission shaft so that the blade seat is able to move upward and downward relative to the transmission shaft. A rotor is fixedly connected to a free end of the transmission shaft and rotatably received in the casing.

    Abstract translation: 用于棉绒剃须器的剃须刀头组件包括可旋转地容纳在壳体内并具有限定在传动轴的远端中的V形切口的传动轴。 叶片组件具有叶片座，其具有从叶片座的底部延伸的V形延伸部，以被牢固地容纳在V形切口中，而相对于传动轴可移动，使得叶片座能相对于传动轴向上和向下移动 传动轴。 转子固定地连接到传动轴的自由端并可旋转地容纳在壳体中。

    One-transistor RAM approach for high density memory application
    29.
    发明授权
    One-transistor RAM approach for high density memory application 有权
    用于高密度存储器应用的单晶体管RAM方法

    公开(公告)号：US06661043B1

    公开(公告)日：2003-12-09

    申请号：US10400401

    申请日：2003-03-27

    Applicant: Kuo-Ching Huang ,  Wen-Cheng Chen ,  Wen-Chuan Chiang ,  Kuo-Chuang Tseng

    Inventor： Kuo-Ching Huang ,  Wen-Cheng Chen ,  Wen-Chuan Chiang ,  Kuo-Chuang Tseng

    IPC: H01L218242

    CPC classification number: H01L27/1085 ,  H01L27/1087

    Abstract: A new method is provided for the creation of a 1T RAM cell. Standard processing is applied to create STI trenches in the surface of a substrate, N2 implantations are performed into the sidewalls of the STI trenches. A layer of lining oxide is created, the implanted N2 interacts with the lining oxide to form SiON over exposed surfaces of the STI trenches. STI oxide is deposited and polished, filling the STI trenches there-with. Crown patterning is performed to define capacitor areas, the crown patterning stops on a layer of etch stop material and the created SION and partially removes STI oxide from the STI trenches. Layers of etch stop material, exposed SiON and pad oxide are removed, exposing the surface of the silicon substrate, the etched layers of STI oxide are not affected by this removal. A layer of SAC oxide is grown, n-well and p-well implantations are performed into the surface of the substrate. The layer of SAC oxide is removed, gate oxide is grown, polysilicon is deposited and patterned and etched, forming polysilicon gate material and polysilicon top plate of the capacitor. Standard processing is further applied to complete the 1T-RAM cell by providing gate spacers and impurity implantations for the gate electrode, by saliciding contact surfaces and by providing contacts to the points of contact of the cell.

    Abstract translation: 提供了一种用于创建1T RAM单元的新方法。 施加标准处理以在衬底的表面中产生STI沟槽，在STI沟槽的侧壁中进行N2注入。 产生衬里氧化层，注入的N 2与衬里氧化物相互作用以在STI沟槽的暴露表面上形成SiON。 沉积和抛光STI氧化物，在那里填充STI沟槽。 进行冠图案化以限定电容器区域，冠图案停止在蚀刻停止材料层上，并且所产生的SION并且部分地从STI沟槽去除STI氧化物。 蚀刻停止材料层，暴露的SiON和衬垫氧化物层被去除，暴露硅衬底的表面，STI氧化物的蚀刻层不受该去除的影响。 生长一层SAC氧化物，n阱和p阱注入进行到衬底的表面。 去除SAC氧化物层，生长栅极氧化物，沉积多晶硅并进行图案化和蚀刻，形成电容器的多晶硅栅极材料和多晶硅顶板。 进一步应用标准处理，通过为栅电极提供栅极间隔物和杂质注入，通过对接触表面进行喷淋并且通过提供与电池的接触点的接触来完成1T-RAM单元。

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