公开(公告)号：US20120077114A1

公开(公告)日：2012-03-29

申请号：US13244127

申请日：2011-09-23

Applicant: Robert John Socha

Inventor： Robert John Socha

IPC: G03F1/68 ,  G06F17/50

CPC classification number: G03F7/70466 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/705

Abstract: A method of decomposing a target pattern having features to be imaged on a substrate so as to allow said features to be imaged in a multi-exposure process. The method includes the steps of: segmenting a plurality of the features into a plurality of polygons; determining the image log slope (ILS) value for each of the plurality of polygons; determining the polygon having the minimum ILS value, and defining a mask containing the polygon; convolving the defined mask with an eigen function of a transmission cross coefficient so as to generate an interference map, where the transmission cross coefficient defines the illumination system to be utilized to image the target pattern; and, assigning a phase to the polygon based on the value of the interference map at a location corresponding to the polygon, where the phase defines which exposure in said multi-exposure process the polygon is assigned.

Abstract translation: 一种分解具有要在基底上成像的特征的目标图案的方法，以便允许所述特征在多曝光过程中成像。 该方法包括以下步骤：将多个特征分割成多个多边形; 确定所述多个多边形中的每一个的图像对数斜率（ILS）值; 确定具有最小ILS值的多边形，并且定义包含多边形的掩模; 将所定义的掩模与传输交叉系数的本征函数进行卷积，以产生干涉图，其中传输交叉系数定义要用于对目标图案成像的照明系统; 并且基于在与所述多边形相对应的位置处的所述干涉图的值将相位分配给所述多边形，其中所述相位定义在所述多曝光处理中指定所述多边形的哪个曝光。

公开(公告)号：US08122391B2

公开(公告)日：2012-02-21

申请号：US12691552

申请日：2010-01-21

Applicant: Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

Inventor： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/70 ,  G03F7/70466 ,  G06F2217/08 ,  G06F2217/12

Abstract: A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. The method includes the steps of: defining an initial H-mask corresponding to the target pattern; defining an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask having a width which is less than a predetermined critical width; identifying vertical critical features in the V-mask having a width which is less than a predetermined critical width; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask. The non-critical features are those features having a width which is greater than or equal to the predetermined critical width. The non-critical features are formed in the H-mask and the V-mask utilizing chrome. The target pattern is then imaged on the substrate by imaging both the H-mask and V-mask.

Abstract translation: 基于具有要在多曝光光刻成像处理中使用的基板上成像的特征的目标图案产生互补掩模的方法。 该方法包括以下步骤：定义对应于目标图案的初始H掩码; 定义对应于目标图案的初始V掩模; 识别具有小于预定临界宽度的宽度的H掩模中的水平临界特征; 识别具有小于预定临界宽度的宽度的V形掩模中的垂直关键特征; 将第一相移和第一百分比传输分配给​​要在H掩模中形成的水​​平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。 该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。 非关键特征是具有大于或等于预定临界宽度的宽度的那些特征。 非关键特征形成在H掩模和使用铬的V形掩模中。 然后通过成像H掩模和V掩模来将目标图案成像在衬底上。

公开(公告)号：US07985515B2

公开(公告)日：2011-07-26

申请号：US12630280

申请日：2009-12-03

Applicant: Duan-Fu Stephen Hsu ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

Inventor： Duan-Fu Stephen Hsu ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

IPC: G03F1/00

CPC classification number: G03F7/705 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/70466

Abstract: A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.

Abstract translation: 一种产生用于多次曝光光刻成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘 图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘 特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直 调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

公开(公告)号：US07818151B2

公开(公告)日：2010-10-19

申请号：US11415423

申请日：2006-05-02

Applicant: Tamer Coskun ,  Sangbong Park ,  Jang Fung Chen ,  Bernd Geh

Inventor： Tamer Coskun ,  Sangbong Park ,  Jang Fung Chen ,  Bernd Geh

IPC: G06F17/50

CPC classification number: G03F7/70941 ,  G03F7/705

Abstract: A process of obtaining short-range flare model parameters representing a short-range flare which degrades a contrast of an image generated by a lithography tool, is disclosed. Short-range flare is measured from the image to obtain measured short-range flare data. A simulation is performed based on short-range flare model parameters to obtain simulated short-range flare data. The simulated short-range flare data is compared with the measured short range flare data. It is determined whether the short-range flare model parameters used in the simulation is appropriate based on the comparison result. The short-range flare model parameters is optimized according to the measured short-range data and the simulated short-range flare data if the short-range flare model parameters used for the simulation is not appropriate.

Abstract translation: 公开了一种获得表示短距离火炬的短距离火炬模型参数的过程，其降低了由光刻工具产生的图像的对比度。 从图像中测量短程光晕，以获得测量的短距离闪光数据。 基于短距离火炬模型参数进行模拟，以获得模拟的短距离火炬数据。 将模拟的短程火炬数据与测量的短距离火炬数据进行比较。 根据比较结果确定模拟中使用的短程火炬模型参数是否合适。 如果用于模拟的短距离火炬模型参数不合适，则根据测得的短距离数据和模拟的短距离火炬数据优化短距离火炬模型参数。

公开(公告)号：US20100221669A1

公开(公告)日：2010-09-02

申请号：US12691552

申请日：2010-01-21

Applicant: Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van der Broeke

Inventor： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van der Broeke

IPC: G03F7/20 ,  G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/70 ,  G03F7/70466 ,  G06F2217/08 ,  G06F2217/12

Abstract: A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. The method includes the steps of: defining an initial H-mask corresponding to the target pattern; defining an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask having a width which is less than a predetermined critical width; identifying vertical critical features in the V-mask having a width which is less than a predetermined critical width; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask. The non-critical features are those features having a width which is greater than or equal to the predetermined critical width. The non-critical features are formed in the H-mask and the V-mask utilizing chrome. The target pattern is then imaged on the substrate by imaging both the H-mask and V-mask.

Abstract translation: 基于具有要在多曝光光刻成像处理中使用的基板上成像的特征的目标图案产生互补掩模的方法。 该方法包括以下步骤：定义对应于目标图案的初始H掩码; 定义对应于目标图案的初始V掩模; 识别具有小于预定临界宽度的宽度的H掩模中的水平临界特征; 识别具有小于预定临界宽度的宽度的V形掩模中的垂直关键特征; 将第一相移和第一百分比传输分配给​​要在H掩模中形成的水​​平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。 该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。 非关键特征是具有大于或等于预定临界宽度的宽度的那些特征。 非关键特征形成在H掩模和使用铬的V形掩模中。 然后通过成像H掩模和V掩模来将目标图案成像在衬底上。

公开(公告)号：US07550235B2

公开(公告)日：2009-06-23

申请号：US10933496

申请日：2004-09-03

Applicant: Xuelong Shi ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke

Inventor： Xuelong Shi ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke

IPC: G03F1/02

CPC classification number: G03F7/705 ,  G03F1/36

Abstract: A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.

Abstract translation: 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。

公开(公告)号：US07399559B2

公开(公告)日：2008-07-15

申请号：US11188858

申请日：2005-07-26

Applicant: Douglas Van Den Broeke ,  J. Fung Chen

Inventor： Douglas Van Den Broeke ,  J. Fung Chen

IPC: G03F9/00

CPC classification number: G03F1/34 ,  G03F1/26 ,  G03F1/36

Abstract: A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature, where the non-resolvable optical proximity correction feature is a phase-edge.

Abstract translation: 一种光刻掩模，用于将形成在掩模中的图案光学转移到基板上并且用于否定光学邻近效应。 掩模包括要印刷在基板上的多个可分辨特征，以及至少一个不可分辨的光学邻近校正特征，其中不可分辨的光学邻近校正特征是相位边缘。

公开(公告)号：US07376930B2

公开(公告)日：2008-05-20

申请号：US10878490

申请日：2004-06-29

Applicant: Kurt E. Wampler ,  Douglas Van Den Broeke ,  Uwe Hollerbach ,  Xuelong Shi ,  Jang Fung Chen

Inventor： Kurt E. Wampler ,  Douglas Van Den Broeke ,  Uwe Hollerbach ,  Xuelong Shi ,  Jang Fung Chen

IPC: G06F17/50 ,  G03F1/00

CPC classification number: G03F1/36 ,  G03F7/70433 ,  G03F7/70441

Abstract: Disclosed concepts include a method, program product and apparatus for generating assist features for a pattern to be formed on the surface of a substrate by generating an image field map corresponding to the pattern. Characteristics are extracted from the image field map, and assist features are generated for the pattern in accordance with the characteristics extracted in step. The assist features may be oriented relative to a dominant axis of a contour of the image field map. Also, the assist features may be polygon-shaped and sized to surround the contour or relative to the inside of the contour. Moreover, the assist features may be placed in accordance with extrema identified from the image field map. Utilizing the image field map, a conventional and complex two-dimensional rules-based approach for generating assist feature can be obviated.

Abstract translation: 所公开的概念包括通过产生对应于图案的图像场图来产生要形成在基板的表面上的图案的辅助特征的方法，程序产品和装置。 从图像场图中提取特征，并根据步骤中提取的特征为图案生成辅助特征。 辅助特征可以相对于图像场图的轮廓的主轴定向。 此外，辅助特征可以是多边形形状并且尺寸设计成围绕轮廓或相对于轮廓的内部。 此外，可以根据从图像场地图识别的极值放置辅助特征。 利用图像场图，可以避免用于产生辅助特征的常规和复杂的基于二维规则的方法。

公开(公告)号：US07354681B2

公开(公告)日：2008-04-08

申请号：US10880376

申请日：2004-06-30

Applicant: Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke ,  Jang Fung Chen

Inventor： Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC: G03F9/00

CPC classification number: G03F1/36

Abstract: A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.

Abstract translation: 一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要成像的特征的目标图案，扩大要成像的特征的宽度，修改掩模以包括邻近边缘的辅助特征 的要成像的特征，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。

公开(公告)号：US07342646B2

公开(公告)日：2008-03-11

申请号：US11051559

申请日：2005-01-27

Applicant: Xuelong Shi ,  Jang Fung Chen

Inventor： Xuelong Shi ,  Jang Fung Chen

IPC: G03B27/32

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F1/44 ,  G03F1/68 ,  G03F7/70425 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525 ,  G03F7/70666 ,  G06F2217/12 ,  Y02P90/265

Abstract: A method for modeling a photolithography process which includes the steps of generating a calibrated model of the photolithography process capable of estimating an image to be produced by the photolithography process when utilized to image a mask pattern containing a plurality features; and determining an operational window of the calibrated model, which defines whether or not the calibrated model can accurately estimate the image to be produced by a given feature in the mask pattern.

Abstract translation: 一种用于对光刻工艺进行建模的方法，其包括以下步骤：产生光刻工艺的校准模型，其能够估计当通过光刻工艺生产的图像，以便对含有多个特征的掩模图案进行成像; 以及确定所述校准模型的操作窗口，其定义所述校准模型是否可以准确地估计由所述掩模图案中的给定特征产生的图像。