公开(公告)号：US08357925B2

公开(公告)日：2013-01-22

申请号：US13300977

申请日：2011-11-21

Applicant: Roy B. Chung ,  Zhen Chen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

Inventor： Roy B. Chung ,  Zhen Chen ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L29/06 ,  H01L31/00

CPC classification number: H01L33/30 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/34333

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract translation: 制造了发射波长（λpeak）范围从280nm到360nm的大功率和高效率发光器件。 新器件结构使用在非极性或半极性体积GaN衬底上生长的非极性或半极性AlInN和AlInGaN合金。

公开(公告)号：US20120140785A1

公开(公告)日：2012-06-07

申请号：US13371490

申请日：2012-02-13

Applicant: Daisuke NAKAGAWA ,  Yoshinori TANAKA ,  Masahiro Murayama ,  Takao FUJIMORI ,  Shinichi KOHDA

Inventor： Daisuke NAKAGAWA ,  Yoshinori TANAKA ,  Masahiro Murayama ,  Takao FUJIMORI ,  Shinichi KOHDA

IPC: H01S5/323

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L29/2003 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/3216 ,  H01S2301/173 ,  H01S2301/185

Abstract: A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.

Abstract translation: 氮化物基半导体器件包括：n型覆层; 放置在n型覆层上的n型GaN基引导层; 置于n型GaN基引导层上的有源层; 放置在有源层上的p型GaN基引导层; 放置在p型GaN基引导层上的电子阻挡层; 放置在电子阻挡层上的应力松弛层; 和位于应力松弛层上的p型覆层，并且氮化物基半导体器件减轻在电子阻挡层的影响下发生的应力，不影响电子阻挡层的光分布，降低阈值电流，可以抑制 可靠性的劣化可以抑制激光束的发射端面的劣化，可以提高远场图案，并且持久，并且还提供了该装置的制造方法。

公开(公告)号：US08174042B2

公开(公告)日：2012-05-08

申请号：US13182867

申请日：2011-07-14

Applicant: Vladimir Semenovich Abramov ,  Naum Petrovich Soshchin ,  Valeriy Petrovich Sushkov ,  Nikolay Valentinovich Shcherbakov ,  Vladimir Vladimirovich Alenkov ,  Sergei Aleksandrovich Sakharov ,  Vladimir Aleksandrovich Gorbylev

Inventor： Vladimir Semenovich Abramov ,  Naum Petrovich Soshchin ,  Valeriy Petrovich Sushkov ,  Nikolay Valentinovich Shcherbakov ,  Vladimir Vladimirovich Alenkov ,  Sergei Aleksandrovich Sakharov ,  Vladimir Aleksandrovich Gorbylev

IPC: H01L33/00

CPC classification number: H01L33/32 ,  B82Y20/00 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/50 ,  H01S5/0218 ,  H01S5/3201 ,  H01S5/34333

Abstract: The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula AlxGa1-xN (0

Abstract translation: 基于AlGaInN系统中的化合物和合金，生长产生白色发射和激光的发光二极管的非极性外延异质结构的方法包括由式Al x Ga 1描述的一个或多个异质结构层的气相沉积步骤 -xN（0

公开(公告)号：US20120104360A1

公开(公告)日：2012-05-03

申请号：US13284449

申请日：2011-10-28

Applicant: Matthew T. Hardy ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Matthew T. Hardy ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L29/15 ,  H01L21/20

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/3201 ,  H01S5/3216 ,  H01S5/34333

Abstract: An (AlInGaN) based semiconductor device, comprising a first layer that is a semipolar or nonpolar nitride (AlInGaN) layer having a lattice constant that is partially or fully relaxed, deposited on a substrate or a template, wherein there are one or more dislocations at a heterointerface between the first layer and the substrate or the template; one or more strain compensated layers on the first layer, for defect reduction and stress engineering in the device, that is lattice matched to a larger lattice constant of the first layer; and one or more nonpolar or semipolar (AlInGaN) device layers on the strain compensated layers.

Abstract translation: 一种基于（AlInGaN）的半导体器件，其包括第一层，其是具有部分或完全弛豫的晶格常数的半极性或非极性氮化物（AlInGaN）层，沉积在衬底或模板上，其中存在一个或多个位错 在第一层和衬底或模板之间的异质界面; 第一层上的一个或多个应变补偿层，用于器件中的缺陷减少和应力工程，其与第一层的较大晶格常数晶格匹配; 以及应变补偿层上的一个或多个非极性或半极性（AlInGaN）器件层。

公开(公告)号：US08144743B2

公开(公告)日：2012-03-27

申请号：US12379945

申请日：2009-03-04

Applicant: Daisuke Nakagawa ,  Yoshinori Tanaka ,  Masahiro Murayama ,  Takao Fujimori ,  Shinichi Kohda

Inventor： Daisuke Nakagawa ,  Yoshinori Tanaka ,  Masahiro Murayama ,  Takao Fujimori ,  Shinichi Kohda

IPC: H01S5/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L29/2003 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3215 ,  H01S5/3216 ,  H01S2301/173 ,  H01S2301/185

Abstract: A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.

Abstract translation: 氮化物基半导体器件包括：n型覆层; 放置在n型覆层上的n型GaN基引导层; 置于n型GaN基引导层上的有源层; 放置在有源层上的p型GaN基引导层; 放置在p型GaN基引导层上的电子阻挡层; 放置在电子阻挡层上的应力松弛层; 和位于应力松弛层上的p型覆层，并且氮化物基半导体器件减轻在电子阻挡层的影响下发生的应力，不影响电子阻挡层的光分布，降低阈值电流，可以抑制 可靠性的劣化可以抑制激光束的发射端面的劣化，可以提高远场图案，并且持久，并且还提供了该装置的制造方法。

公开(公告)号：US08130805B2

公开(公告)日：2012-03-06

申请号：US12706636

申请日：2010-02-16

Applicant: Satoshi Murasawa ,  Toru Takayama ,  Yoshiaki Hasegawa

Inventor： Satoshi Murasawa ,  Toru Takayama ,  Yoshiaki Hasegawa

IPC: H01S5/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L2224/48463 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/0655 ,  H01S5/1017 ,  H01S5/1082 ,  H01S5/3201 ,  H01S2301/18

Abstract: A semiconductor laser apparatus includes, on a substrate, a first-conductivity type layer, an active layer, a second-conductivity type layer having a ridge extending along an optical waveguide direction, and a current blocking layer formed on sides of the ridge. The ridge is disposed to separate the substrate into a first region having a first width, and a second region having a second width greater than the first width, in a direction perpendicular to the optical waveguide direction. The second-conductivity type layer has a shock attenuating portion having a height greater than or equal to that of the ridge, on sides of the ridge. In the second region, a trench extending from an upper surface of the shock attenuating portion, penetrating at least the active layer, and reaching the first-conductivity type layer, is formed along the optical waveguide direction.

Abstract translation: 半导体激光装置在基板上包括第一导电型层，有源层，具有沿着光波导方向延伸的脊的第二导电型层，以及形成在堤脊侧面的电流阻挡层。 脊设置成在垂直于光波导方向的方向上将基板分离成具有第一宽度的第一区域和具有大于第一宽度的第二宽度的第二区域。 第二导电型层具有在脊的侧面上具有大于或等于脊的高度的冲击衰减部分。 在第二区域中，沿着光波导方向形成从冲击衰减部的上表面延伸穿过至少有源层并到达第一导电型层的沟槽。

公开(公告)号：US20110260202A1

公开(公告)日：2011-10-27

申请号：US13056724

申请日：2009-07-21

Applicant: Stephan Lutgen ,  Christoph Eichler ,  Marc Schillgalies ,  Desiree Queren

Inventor： Stephan Lutgen ,  Christoph Eichler ,  Marc Schillgalies ,  Desiree Queren

IPC: H01L33/42 ,  B82Y99/00

CPC classification number: H01L33/24 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02587 ,  H01L31/0236 ,  H01L33/007 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/2231 ,  H01S5/24 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3215 ,  H01S2301/18 ,  H01S2304/12 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip (1) is herein described which comprises a non-planar growth layer (2), which contains at least one first nitride compound semiconductor material, and an active zone (5), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (2), and a top layer (7), which is arranged on the active zone (5), the growth layer (2) comprising structure elements (4) at a growth surface (3) facing the active zone (5).

Abstract translation: 本文描述了一种光电半导体芯片（1），其包括含有至少一个第一氮化物化合物半导体材料的非平面生长层（2）和包含至少一个第二氮化物化合物半导体 并且布置在生长层（2）上，并且在生长表面（3）上布置有包括结构元件（4）的生长层（2）的布置在活性区（5）上的顶层（7） 面向活动区域（5）。

公开(公告)号：US20110101419A1

公开(公告)日：2011-05-05

申请号：US12909136

申请日：2010-10-21

Applicant: Masayuki Hata ,  Yasumitsu Kunoh

Inventor： Masayuki Hata ,  Yasumitsu Kunoh

IPC: H01L29/04 ,  H01L21/20

CPC classification number: H01L21/0243 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/02212 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3406 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04

Abstract: This semiconductor device includes a substrate, an underlayer formed on a main surface of the substrate, a first semiconductor layer and a second semiconductor layer. Unstrained lattice constants of the underlayer and the second semiconductor layer in a second direction are larger than a lattice constant of the substrate in the second direction in an unstrained state. Lattice constants of the underlayer and the second semiconductor layer in the second direction in a state of being formed on the main surface are larger than the lattice constant of the substrate in the second direction.

Abstract translation: 该半导体器件包括衬底，形成在衬底的主表面上的底层，第一半导体层和第二半导体层。 在第二方向上的下层和第二半导体层的非限制晶格常数大于基板在无限制状态下在第二方向上的晶格常数。 在形成在主表面上的状态下，底层和第二半导体层在第二方向上的晶格常数大于基板在第二方向上的晶格常数。

公开(公告)号：US07830926B1

公开(公告)日：2010-11-09

申请号：US11938637

申请日：2007-11-12

Applicant: Matthew H. Kim

Inventor： Matthew H. Kim

IPC: H01S3/10

CPC classification number: H01S5/0607 ,  B82Y20/00 ,  H01L29/12 ,  H01L29/78 ,  H01L29/84 ,  H01S5/02264 ,  H01S5/3201 ,  H01S5/34

Abstract: This description relates to an apparatus, a method of manufacturing, and a method of tuning optical and/or electrical parameters of semiconductor devices and materials, thin film materials, or other devices. In one example, a laser is tuned to produce an adjustable output wavelength by coupling the laser to a tuning material or base such as, for example, a piezoelectric base using a suitable attachment method. The laser includes of a tunable material that is sensitive to stress and/or strain. Stress and/or strain applied to the laser from the tuning material results in an electronically variable output wavelength. As an example, applying a voltage to a piezoelectric base that serves as a tuning material can cause the base to expand or contract, and the expansions and contractions from the base are coupled to the tunable material of the laser, thus varying the wavelength of the output light from the laser. Additionally, other devices that are sensitive to stress and/or strain can be adjoined in a similar manner and can result in an electronically variable output of the devices. Examples of other examples are disclosed herein.

Abstract translation: 本说明书涉及一种调整半导体器件和材料，薄膜材料或其它器件的光学和/或电学参数的设备，制造方法和方法。 在一个示例中，通过使用合适的附接方法将激光器耦合到调谐材料或基底，例如压电基座，来调整激光器以产生可调输出波长。 激光器包括对应力和/或应变敏感的可调谐材料。 从调谐材料施加到激光器的应力和/或应变导致电子可变输出波长。 作为示例，向用作调谐材料的压电基底施加电压可能导致基体膨胀或收缩，并且从基底的膨胀和收缩与激光器的可调谐材料耦合，因此改变了波长 从激光输出光。 此外，对应力和/或应变敏感的其他器件可以以相似的方式邻接并且可以导致器件的电子可变输出。 其它实例的实例在此公开。

公开(公告)号：US07787509B2

公开(公告)日：2010-08-31

申请号：US11711629

申请日：2007-02-28

Applicant: Tsutomu Ukai ,  Masaya Mannoh

Inventor： Tsutomu Ukai ,  Masaya Mannoh

IPC: H01S5/00

CPC classification number: H01S5/16 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/168 ,  H01S5/22 ,  H01S5/3201 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

Abstract: In a constitution where a first clad layer is formed on a semiconductor substrate, an active layer having the strained multiple quantum well structure is formed on the first clad layer, and a second clad layer is formed on the active layer, the sum of products of strain amounts and film thickness in the active layer is set to a negative value.

Abstract translation: 在半导体衬底上形成有第一覆盖层的结构中，在第一覆盖层上形成具有应变量子阱结构的有源层，在有源层上形成第二覆盖层， 活性层中的应变量和膜厚设定为负值。