公开(公告)号：US5901984A

公开(公告)日：1999-05-11

申请号：US984302

申请日：1997-12-03

Applicant: Masami Nishikawa

Inventor： Masami Nishikawa

IPC: G01F15/18 ,  F16L39/00 ,  G01F1/00 ,  G01F1/68 ,  G01F1/684 ,  F16L35/00

CPC classification number: F16L39/00 ,  G01F15/185

Abstract: A coupling mechanism for removably connecting a fluid line to an apparatus such as a mass flow controller and includes a flange member for connection to the apparatus so that it is cantilevered from the apparatus and provides a fluid connection with a bore opening that is vertically aligned. A yoke member is dimensioned to extend over the flange member and have a corresponding fluid conduit and bore that can be aligned vertically with the bore opening on the flange member. A seal member can be positioned between the yoke member and the flange member. A spacer member is mounted in the yoke member and a fastener member can be aligned vertically to exert a force on the flange member to apply a sealing pressure to the seal member while locking the yoke member to the flange member.

Abstract translation: 用于将流体管线可移除地连接到诸如质量流量控制器的装置的联接机构，并且包括用于连接到装置的凸缘构件，使得其从装置悬臂并且提供与竖直对准的孔口的流体连接。 轭构件的尺寸设计成在凸缘构件上延伸并且具有可以与凸缘构件上的孔开口垂直对准的相应的流体导管和孔。 密封构件可以位于轭构件和凸缘构件之间。 隔离构件安装在轭构件中，并且紧固构件可以垂直对齐以在凸缘构件上施加力，以在将轭构件锁定到凸缘构件的同时向密封构件施加密封压力。

公开(公告)号：US5810928A

公开(公告)日：1998-09-22

申请号：US558506

申请日：1995-11-16

Applicant: Hiroyuki Harada ,  Toshihiko Uno ,  Shigeyuki Akiyama ,  Tetuo Shimizu

Inventor： Hiroyuki Harada ,  Toshihiko Uno ,  Shigeyuki Akiyama ,  Tetuo Shimizu

IPC: C23C16/52 ,  C23C16/00

CPC classification number: C23C16/52

Abstract: A method of measuring gas component Concentrations of special material gases for semiconductor, and a semiconductor equipment are provided. The method and apparatus can be incorporated in a gas pipe line system in an inline manner, and measure the component and concentration of a gas flowing through a gas pipe line or a gas with which the gas pipe line system is filled, thereby eliminating any erroneous connection. In the method of measuring gas component concentrations of special material gases for semiconductor, as means for attaining the objects, an infrared gas detector is disposed in a gas pipe line between a gas cylinder containing a special material gas for semiconductor and a semiconductor producing section, so that the gas component and concentration are measured in an inline manner. An apparatus for supplying special material gases for semiconductor is also provided. In the apparatus, a monitor for monitoring a gas component, a concentration, a flow rate, and the like is incorporated in a gas pipe line system from a gas cylinder storing room to a semiconductor equipment, so that any accident such-as erroneous connection, erroneous piping, or erroneous exchange is prevented from occurring. As means for attaining the object, a massflow controller is disposed in each of pipe lines connected to a plurality of gas cylinders containing special material gases for semiconductor, and an infrared gas sensor functioning as an inline gas monitor is disposed in a pipe line between a junction point of the pipe lines and the semiconductor equipment. The massflow controllers and the infrared gas detector are connected to a control apparatus for the apparatus for supplying gases for semiconductor, and the respective output signals are checked. The supply of the gases is controlled in accordance with the agreement or disagreement of the signals.

公开(公告)号：US5520001A

公开(公告)日：1996-05-28

申请号：US387098

申请日：1995-02-13

Applicant: Hideaki Miyamoto ,  Kohichi Ishikawa ,  Takeshi Kawano

Inventor： Hideaki Miyamoto ,  Kohichi Ishikawa ,  Takeshi Kawano

IPC: F16K7/14 ,  F16K31/00 ,  F17C9/02

CPC classification number: F16K7/14 ,  F16K31/007 ,  F17C9/02 ,  F17C2205/0385 ,  F17C2223/0153 ,  F17C2225/0123 ,  F17C2227/0393 ,  F17C2227/044 ,  F17C2250/0636 ,  F17C2270/0518

Abstract: A vapor controller capable of reducing a thermal influence upon a liquid material to be vaporized as far as possible and always stably controlling a vaporized gas in flow rate in high-speed response and a vapor controller having a vaporizer capable of improving a purge efficiency are provided. A vapor controller in which a vaporizer covered with a diaphragm is formed in a body block including a heater and a temperature sensor while a liquid material inlet passage and a gas outlet passage is formed within said body block so as to be opened on an end face of the body block at one end thereof, respectively, and communicated with said vaporizing chamber at the other end thereof, respectively, said diaphragm being driven by a pressedly driving portion provided in the body block to adjust an openness of an opening facing to the vaporizing chamber of said liquid material inlet passage, said liquid material introduced into the vaporizing chamber through the liquid material inlet passage being vaporized within the vaporizing chamber, and a gas generated by a vaporization being discharged through said gas outlet passage.

Abstract translation: 提供一种蒸汽控制器，其能够尽可能地减少对要蒸发的液体材料的热影响，并且总是在高速响应中始终稳定地控制气化气体的流速，以及具有能够提高吹扫效率的蒸发器的蒸汽控制器 。 一种蒸气控制器，其中在包括加热器和温度传感器的主体块中形成有被隔膜覆盖的蒸发器，同时在所述主体块内形成液体材料入口通道和气体出口通道，以在端面上打开 分别在其另一端与所述蒸发室连通，所述隔膜由设置在所述体块中的压制驱动部分驱动，以调节面向蒸发的开口的开度 所述液体材料入口通道的室，通过液体材料入口通道引入蒸发室的所述液体材料在蒸发室内蒸发，并且通过所述气体出口通道排出通过蒸发产生的气体。

公开(公告)号：US5377616A

公开(公告)日：1995-01-03

申请号：US150532

申请日：1993-11-09

Applicant: Hiroshi Mihira ,  Tetsuo Shimizu ,  Kazuhiro Hirahara ,  Toshinobu Ishihara ,  Seiki Takaya

Inventor： Hiroshi Mihira ,  Tetsuo Shimizu ,  Kazuhiro Hirahara ,  Toshinobu Ishihara ,  Seiki Takaya

IPC: C23C16/448 ,  C30B25/02 ,  C30B25/14 ,  H01L21/205

CPC classification number: C30B25/02 ,  C23C16/4485 ,  C23C16/45561 ,  C30B25/14 ,  C30B29/40 ,  Y10S117/919 ,  Y10T117/1004

Abstract: A method for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber which comprises the steps of heating an organometal compound to a predetermined temperature to obtain vapor of the compound at a predetermined vapor pressure and supplying, in a constant flow rate, the vapor to the surface of a substrate heated under a reduced pressure: an apparatus for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber 11 comprising a first gas flow path for the vapor of the organometal compound which connects a container 20, in which the organometal compound is charged, to a crystal growth chamber heated under a reduced pressure through a first valve 21, a first massflow controller 22 and a second valve 23 in this order; and a constant temperature oven 24 and 25 for controlling the temperature of the container 20 and the first gas flow path extending from the container 20 to the second valve 23, are herein disclosed. The method and the apparatus makes it possible to form a thin film on substrate having even a large surface area and uniform composition and thickness with good reproducibility and to provide an epitaxial thin film of a compound semiconductor having good sharpness of the crystal growing boundary; the method further makes it possible to prevent the contamination of the solid organometal compound and to provide good workability.

Abstract translation: 一种用于蒸发有机金属化合物并将其产生的蒸气供应到晶体生长室的方法，该方法包括以下步骤：将有机金属化合物加热至预定温度以获得化合物的蒸气，并以预定的蒸汽压进行，并以恒定的流量 蒸气到减压下加热的基底表面：用于蒸发有机金属化合物并将其产生的蒸气供应到晶体生长室11的装置，该结晶生长室11包括有机金属化合物蒸汽的第一气体流路， 通过第一阀21，第一质量流量控制器22和第二阀23依次向经过减压加热的晶体生长室中装入有机金属化合物的容器20; 以及用于控制容器20的温度和从容器20延伸到第二阀23的第一气体流路的恒温箱24和25。 该方法和装置使得可以在具有大的表面积和均匀的组成和厚度的基板上形成薄膜，具有良好的再现性，并且提供具有良好的晶体生长边界锐度的化合物半导体的外延薄膜; 该方法还可以防止固体有机金属化合物的污染并提供良好的可加工性。

公开(公告)号：US5347861A

公开(公告)日：1994-09-20

申请号：US020224

申请日：1993-02-16

Applicant: Kiyoshi Satoh

Inventor： Kiyoshi Satoh

IPC: G01F1/68 ,  G01F1/684 ,  G01F1/688 ,  G01F1/69

CPC classification number: G01F1/6847

Abstract: The portions on the sides far to each other of two sensor coils wound around the outer circumferential portion of the conduit, through which the fluid passes, at the suitable interval are thermally joined through a thermal conductor and the thermal conductor is heated by means of a heater, whereby the flow rate of fluid can be accurately measured without being influenced by the posture error resulting from the convection.

Abstract translation: 以适当的间隔缠绕在流体通过的导管的外周部分上的两个传感器线圈彼此远的两侧的部分通过热导体热连接，并且热导体借助于 加热器，从而可以精确地测量流体的流量，而不受由对流引起的姿态误差的影响。

公开(公告)号：US5141021A

公开(公告)日：1992-08-25

申请号：US756192

申请日：1991-09-06

Applicant: Mitsuzo Shimomura ,  Masao Yamaguchi

Inventor： Mitsuzo Shimomura ,  Masao Yamaguchi

IPC: G01F1/684 ,  G05D7/06

CPC classification number: G05D7/0623 ,  G01F1/6847 ,  Y10T137/7759 ,  Y10T137/7761

Abstract: The output from the sensor detecting the flow rate of the fluid passing through the conduit is compared with the ceiling value and the appointed compensating signal is added to the output from the sensor to display the signal obtained on the basis of this addition result as the value of flow rate or reduce the openness of the control valve on the basis of the above described signal when the output from the sensor is larger than the threshold value, so that the mass flow meter can accurately display the flow rate even when the fluid passes in an excessive flow rate. In addition, even though the mass flow meter and the mass flow controller are fallen into the abnormal operating condition due to an excessive flow rate of fluid, they can be quickly returned to the normal operating condition.

Abstract translation: 将检测流过导管的流体的流量的传感器的输出与上限值进行比较，并将指定的补偿信号与传感器的输出相加，以显示基于该加法结果获得的信号作为值 的流量，或者当传感器的输出大于阈值时，基于上述信号来减小控制阀的开度，使得即使当流体流入时，质量流量计也可以精确地显示流量 流量过大。 此外，即使质量流量计和质量流量控制器由于流体的流量过大而下降到异常操作状态，因此可以迅速地恢复到正常运行状态。

公开(公告)号：US5094430A

公开(公告)日：1992-03-10

申请号：US664353

申请日：1991-03-04

Applicant: Takashi Shirai ,  Michinori Iwamoto ,  Tetsuo Shimizu ,  Hiroshi Ohsasa

Inventor： Takashi Shirai ,  Michinori Iwamoto ,  Tetsuo Shimizu ,  Hiroshi Ohsasa

IPC: F16K31/00

CPC classification number: F16K31/007

Abstract: A control valve, in which a valve body opening and closing a valve mouth is driven by a strain force of a piezostack, characterized in that an upper fixed portion of said piezostack is supported by a ring-like tapered surface or a spherical surface and a lower movable portion of the piezostack is combined with a valve body through a spherical bearing.The strain output can be surely transmitted to said valve body by holding the piezostack so that no movement other than a strain resulting from the application of voltage may be produced.

Abstract translation: 一种控制阀，其中开启和关闭阀口的阀体由压电堆的应变力驱动，其特征在于，所述压电堆的上部固定部分由环形锥形表面或球形表面支撑， 压电堆的下部可移动部分通过球面轴承与阀体组合。 通过保持压电堆可以确保应变输出传递到所述阀体，使得不会产生除施加电压的应变以外的运动。

公开(公告)号：US4695034A

公开(公告)日：1987-09-22

申请号：US799739

申请日：1985-11-19

Applicant: Tetsuo Shimizu ,  Kiyoharu Tujimura ,  Michinori Iwamoto

Inventor： Tetsuo Shimizu ,  Kiyoharu Tujimura ,  Michinori Iwamoto

IPC: F16K31/00 ,  H01L41/083 ,  H01L41/09 ,  F16K31/02

CPC classification number: F16K31/007 ,  H01L41/0833 ,  H02N2/043 ,  Y10T137/7759 ,  Y10T137/7761

Abstract: A valve body which is driven by a valve body-driving portion constructed from a piezoelectric stack to open and close a valve mouth. The piezoelectric stack consists of piezoelectric disc elements having a thickness of 0.1 to 0.5 mm and a diameter of 10 to 50 mm, whose upper surface and lower surface are both plated, and thin metallic plates each having a thickness of 0.05 to 0.2 mm and being high in electric conductance, are alternately laminated one between the piezoelectric elements by one (the number of piezoelectric elements laminated is 100 to 200). Every other one of the thin metallic plates are connected to a positive polar lead and the remaining plates are connected to a negative polar lead, and a voltage-applying lead wire is connected with each of the lead wires. A driving force transmission member can be provided between the valve body-driving portion and the valve body for amplifying the amount of distortion of the piezoelectric stack to thereby allow adjustment of the amount of movement of the valve body and adapt the structure for handling large volumes of fluid.

Abstract translation: 一种阀体，由阀体驱动部分驱动，阀体驱动部分由压电叠层构成，以打开和关闭阀口。 压电叠层由厚度为0.1〜0.5mm，直径为10〜50mm，上表面和下表面都镀覆的压电盘元件和厚度为0.05〜0.2mm的薄金属板构成， 电导率高，在压电元件之间交替层叠1个（压电元件的层叠数为100〜200）。 每一个薄金属板连接到正极引线，其余的板连接到负极引线，并且施加电压的引线与每个引线连接。 驱动力传递部件可以设置在阀体驱动部和阀体之间，用于放大压电叠层的变形量，从而允许调整阀体的运动量并适应大体积的结构 的流体。

公开(公告)号：US4624138A

公开(公告)日：1986-11-25

申请号：US620074

申请日：1984-06-12

Applicant: Hirofumi Ono ,  Kiyoharu Tsujimura ,  Masayuki Kamo ,  Yoritaka Isoda

Inventor： Hirofumi Ono ,  Kiyoharu Tsujimura ,  Masayuki Kamo ,  Yoritaka Isoda

IPC: G01F1/68 ,  G01F1/684 ,  G01F1/692 ,  G01P5/10

CPC classification number: G01P5/10 ,  G01F1/6845 ,  G01F1/692 ,  Y10T29/49099

Abstract: A mass gas flow sensor for measuring the mass flow rate of a gas through a passage, and a method of manufacture thereof. The sensor includes a substrate having a streamlined end surface which is to project upstream in the passage, upstream and downstream heating resistors formed on the substrate, protective films covering the resistors, and circuitry for applying current to the resistors so as to heat the resistors, the gas cooling the upstream resistor more than the downstream resistor. The circuitry also produces an electrical voltage responsive to differences in voltage across the upstream and downstream resistors, corresponding to the mass gas flow in the passage. In a mass production method of manufacture of a preferred embodiment, a composite substrate material is produced with hollow portions therein by joining a first integral wafer having a plurality of grooves with a second integral wafer which closes the grooves, and providing a plurality of resistors on the composite substrate material by photolithography and etching directly over the grooves before cutting the substrate material into a plurality of hollow substrates. One end surface of each of the hollow substrates is then tapered to provide a streamlined shape.

Abstract translation: 用于测量通过通道的气体的质量流量的质量气体流量传感器及其制造方法。 传感器包括具有流线型端面的基板，该端面在通道中上游延伸，形成在基板上的上游和下游加热电阻器，覆盖电阻器的保护膜，以及用于向电阻器施加电流以加热电阻器的电路， 气体冷却上游电阻多于下游电阻。 电路还产生响应于上游和下游电阻器中的电压差的电压，对应于通道中的质量气体流。 在制造优选实施例的批量生产方法中，通过将具有多个凹槽的第一整体晶片与封闭凹槽的第二整体晶片接合而制造出具有中空部分的复合基板材料，并且将多个电阻器 该复合衬底材料通过光刻法直接蚀刻在凹槽上，然后将衬底材料切割成多个中空衬底。 然后，每个中空基板的一个端面被锥形以提供流线型的形状。

公开(公告)号：US20150254185A1

公开(公告)日：2015-09-10

申请号：US14722873

申请日：2015-05-27

Applicant: STEC, INC.

Inventor： Anurag AGARWAL ,  Anand MITRA ,  Prasad JOSHI ,  Kanishk RASTOGI

IPC: G06F12/08 ,  G06F3/06 ,  G06F9/455 ,  G06F12/06

CPC classification number: G06F12/0833 ,  G06F3/061 ,  G06F3/0665 ,  G06F3/0685 ,  G06F9/455 ,  G06F9/45558 ,  G06F9/4856 ,  G06F9/5077 ,  G06F12/0638 ,  G06F12/0842 ,  G06F12/0866 ,  G06F12/0871 ,  G06F12/0888 ,  G06F2009/4557 ,  G06F2212/152 ,  G06F2212/205 ,  G06F2212/604 ,  G06F2212/62

Abstract: Systems and methods for caching data from a plurality of virtual machines are disclosed. In one particular exemplary embodiment, the systems and methods may be realized as a method for caching data from a plurality of virtual machines. The method may comprise detecting, using a computer processor executing cache management software, initiation of migration of a cached virtual machine from a first virtualization platform to a second virtualization platform, disabling caching for the virtual machine on the first virtualization platform, detecting completion of the migration of the virtual machine to the second virtualization platform, and enabling caching for the virtual machine on the second virtualization platform.

Abstract translation: 公开了用于从多个虚拟机缓存数据的系统和方法。 在一个特定的示例性实施例中，系统和方法可以被实现为用于从多个虚拟机缓存数据的方法。 该方法可以包括使用执行高速缓存管理软件的计算机处理器启动将缓存的虚拟机从第一虚拟化平台迁移到第二虚拟化平台，禁用第一虚拟化平台上的虚拟机的高速缓存，检测 将虚拟机迁移到第二虚拟化平台，并为第二虚拟化平台上的虚拟机启用高速缓存。