公开(公告)号：US07045786B2

公开(公告)日：2006-05-16

申请号：US10797607

申请日：2004-03-11

Applicant: Andreas Mandelis ,  Derrick Shaughnessy ,  Jerias Alves Batista ,  Jose A. Garcia

Inventor： Andreas Mandelis ,  Derrick Shaughnessy ,  Jerias Alves Batista ,  Jose A. Garcia

IPC: G01J5/02

CPC classification number: G01N21/17

Abstract: The present invention relates to metrologic methodologies and instrumentation, in particular laser-frequency domain infrared photocarrier radiometry (PCR), for contamination and defect mapping and measuring electronic properties in industrial Si wafers, devices and other semiconducting materials. In particular the invention relates to the measurement of carrier recombination lifetime, τ, carrier diffusivity, D, surface recombination velocities, S, carrier diffusion lengths, L, and carrier mobility, μ, as well as heavy metal contamination mapping, ion implantation mapping over a wide range of dose and energy, and determination of the concentration of mobile impurities in SiO2 layers on semiconductor substrates. The present invention provides a method and complete photocarrier radiometric apparatus comprising novel signal generation and analysis techniques (carrier-wave interferometry) as well as novel instrumental hardware configurations based on the physical principle of photocarrier radiometry. The method comprises (a) optical excitation of the sample with a modulated optical excitation source and (b) detection of the recombination-induced infrared emission while filtering any Planck-mediated emissions. The present invention provides an instrumental method for detecting weak inhomogeneities among semiconducting materials that are not possible to detect with conventional single-ended photocarrier radiometry. The method comprises (a) irradiating both sides of the sample with modulated optical excitation sources that are 180 degrees out of phase with respect to one another and (b) monitoring the diffusion of the interfering, separately generated carrier waves through the corresponding recombination-induced IR emissions for PCR detection, or the use of an alternative detection scheme that monitors a sample property dependent on the carrier wave transport in the sample.

公开(公告)号：US20050234319A1

公开(公告)日：2005-10-20

申请号：US11058233

申请日：2005-02-16

Applicant: Andreas Mandelis ,  Alex Vitkin ,  Sergey Telenkov ,  Ying Fan

Inventor： Andreas Mandelis ,  Alex Vitkin ,  Sergey Telenkov ,  Ying Fan

IPC: A61B5/05 ,  G01B21/08 ,  G01N21/17 ,  G01N21/47 ,  G01N29/06 ,  G01N29/07 ,  G01N29/11 ,  G01N29/46

CPC classification number: G01N21/1702 ,  G01B21/085 ,  G01N21/4795 ,  G01N29/0609 ,  G01N29/07 ,  G01N29/11 ,  G01N29/46 ,  G01N2291/02475 ,  G01N2291/02872 ,  G01N2291/0421

Abstract: A method and apparatus for biomedical subsurface imaging and measurement of thickness, elastic and optical properties of industrial and biomedical materials based on laser Photo-Thermo-Acoustic (PTA) frequency-swept heterodyne depth profilometry, In particular, the invention relates to biomedical imaging and measure of tissue and tumour thickness, L, speed of sound, cs, acoustic attenuation coefficient, γ, optical absorption coefficient, μa, and optical scattering coefficient, μs. The method and apparatus involves providing for a sample of the material to be characterized; irradiating the material for a selected period of time with an excitation waveform from a modulated optical excitation source wherein a photo-thermo-acoustic emission is responsively emitted from said solid; detecting said emitted photo-thermo-acoustic emission; processing the electronic signal to convert the frequency-domain signal into time-domain and perform depth profilometric imaging and determining thermoelastic and optical properties of the material sample;

Abstract translation: 基于激光光热声（PTA）频扫外差深度轮廓测量法的工业和生物医学材料的厚度，弹性和光学性质的生物医学地下成像和测量的方法和装置，特别地，本发明涉及生物医学成像和 组织和肿瘤厚度的测量，L，声速，声衰减系数，γ，光吸收系数，μλα和光散射系数，μ< SUB> s 。 该方法和装置包括提供要表征的材料的样品; 用来自调制光激发源的激发波形照射材料一段选定的时间，其中从所述固体响应地发射光热声发射; 检测所述发射的光热声发射; 处理电子信号以将频域信号转换成时域并执行深度轮廓测量成像并确定材料样品的热弹性和光学性质;