公开(公告)号：US20070000592A1

公开(公告)日：2007-01-04

申请号：US11172029

申请日：2005-06-29

Applicant: Farokh Fares ,  Erming Luo ,  Devendra Natekar

Inventor： Farokh Fares ,  Erming Luo ,  Devendra Natekar

IPC: B32B37/12 ,  B32B38/00 ,  B32B37/06

CPC classification number: H01L24/93 ,  H01L24/81 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/014 ,  H01L2924/10253 ,  Y10T156/1089 ,  Y10T156/1702 ,  Y10T156/1744 ,  Y10T156/1768 ,  Y10T156/1798 ,  H01L2924/00

Abstract: An assembly arrangement includes an assembly head having plural nozzles. The assembly head is designed to operate on a group of attach sites of a substrate at substantially the same time and is designed to be moveable relative to the substrate to allow the plural nozzles to successively operate on different groups of attach sites of the substrate.

Abstract translation: 组装装置包括具有多个喷嘴的组装头。 组装头设计成在基本上相同的时间在一组基底的附着位置上操作，并被设计成相对于基底可移动，以允许多个喷嘴在衬底的不同组的附着位置上连续地操作。

公开(公告)号：US20060046433A1

公开(公告)日：2006-03-02

申请号：US10925775

申请日：2004-08-25

Applicant: Terry Sterrett ,  Leonel Arana ,  Devendra Natekar

Inventor： Terry Sterrett ,  Leonel Arana ,  Devendra Natekar

IPC: H01L21/463

CPC classification number: H01L21/02013 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363

Abstract: Wafer thinning may be accomplished by grinding while the wafer is held in the fixture. The fixture may have a series of protrusions that form an interference fit with surface features extending outwardly from the non-thinned surface of the wafer to be thinned. In some embodiments, a releasable adhesive may be utilized to augment the interference effect. Also, in some embodiments, openings in a shape memory material may be utilized that, upon heating, more firmly engage the bumps on the wafer to be thinned.

Abstract translation: 晶片变薄可以通过在晶片保持在固定装置中的同时进行研磨来实现。 夹具可以具有一系列突起，其形成与要被变薄的晶片的非变薄表面向外延伸的表面特征的过盈配合。 在一些实施方案中，可以使用可释放粘合剂来增加干扰效应。 此外，在一些实施例中，可以利用形状记忆材料中的开口，其在加热时更牢固地接合要稀释的晶片上的凸块。

公开(公告)号：US06803653B1

公开(公告)日：2004-10-12

申请号：US10010392

申请日：2001-12-07

Applicant: Robert E. Likins ,  Richard C. Blish, II ,  Sharad M. Shah ,  Sidharth Sidharth ,  Devendra Natekar

Inventor： Robert E. Likins ,  Richard C. Blish, II ,  Sharad M. Shah ,  Sidharth Sidharth ,  Devendra Natekar

IPC: H01L2334

CPC classification number: H01L23/36 ,  H01L23/42 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/3011 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/0401

Abstract: A semiconductor structure includes a substrate and a semiconductor devices secured to the substrate. A stabilizing member is secured to the semiconductor device, and has a coefficient of thermal expansion which is substantially the same as the coefficient of thermal expansion of the substrate. The bending stiffness of the substrate is substantially the same as the bending stiffness of the stabilizing member, wherein: bending stiffness=Et3, with E=Young's modulus, and t=thickness. In another embodiment, a stabilizing member is secured to the substrate, and has a coefficient of thermal expansion which is substantially the same as the coefficient of thermal expansion of the die. The bending stiffness of the die is substantially the same as the bending stiffness of the stabilizing member, with bending stiffness defined as above.

Abstract translation: 半导体结构包括衬底和固定到衬底的半导体器件。 稳定构件被固定到半导体器件，并且具有基本上与衬底的热膨胀系数相同的热膨胀系数。 基板的弯曲刚度基本上与稳定构件的弯曲刚度相同，其中：在另一个实施例中，稳定构件固定到基板上，并且具有与系数相同的热膨胀系数 模具的热膨胀。 模具的弯曲刚度基本上与稳定构件的弯曲刚度相同，具有如上所述的弯曲刚度。