公开(公告)号：US20060177568A1

公开(公告)日：2006-08-10

申请号：US11049846

申请日：2005-02-04

Applicant: Gareth Hougham ,  Leena Buchwalter ,  Stephen Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey Gelorme ,  Kathleen Hinge ,  Anurag Jain ,  Sung Kang ,  John Knickerbocker

Inventor： Gareth Hougham ,  Leena Buchwalter ,  Stephen Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey Gelorme ,  Kathleen Hinge ,  Anurag Jain ,  Sung Kang ,  John Knickerbocker

IPC: B05D5/12 ,  H05K3/00 ,  B05C1/00

CPC classification number: H05K3/4053 ,  B05D1/002 ,  H01L21/486 ,  H01L21/76898 ,  H05K2201/09509 ,  H05K2203/1554

Abstract: The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.

Abstract translation: 本公开一般涉及半导体，集成电路，特别是但不限于，用于填充高纵横比通孔和沟槽的离心方法，其具有粉末，糊料，材料悬浮液，用作导电，结构 支撑或电子部件的保护构件。

公开(公告)号：US20060040567A1

公开(公告)日：2006-02-23

申请号：US10711076

申请日：2004-08-20

Applicant: William Bernier ,  Tien-Jen Cheng ,  Marie Cole ,  David Eichstadt ,  Mukta Farooq ,  John Fitzsimmons ,  Lewis Goldmann ,  John Knickerbocker ,  Tasha Lopez ,  David Welsh

Inventor： William Bernier ,  Tien-Jen Cheng ,  Marie Cole ,  David Eichstadt ,  Mukta Farooq ,  John Fitzsimmons ,  Lewis Goldmann ,  John Knickerbocker ,  Tasha Lopez ,  David Welsh

IPC: H05K1/00 ,  H01R12/00 ,  H01R13/42

CPC classification number: H01L21/563 ,  H01L23/3171 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/10126 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13566 ,  H01L2224/16 ,  H01L2224/73203 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01R43/0256 ,  H05K3/284 ,  H05K3/3436 ,  H05K2201/0133 ,  H05K2201/10977 ,  Y02P70/613 ,  H01L2224/29099 ,  H01L2224/0401

Abstract: Disclosed is a method of forming an integrated circuit structure that forms lead-free connectors on a device, surrounds the lead-free connectors with a compressible film, connects the device to a carrier (the lead-free connectors electrically connect the device to the carrier), and fills the gaps between the carrier and the device with an insulating underfill.

Abstract translation: 公开了一种形成集成电路结构的方法，其在器件上形成无铅连接器，用可压缩膜围绕无铅连接器，将器件连接到载体（无铅连接器将器件电连接到载体上 ），并用绝缘底部填充物填充载体和装置之间的间隙。