Abstract:
An image sensor for capturing image, has: a plurality of pixels arranged in a matrix each including a photoelectric conversion element for generating current according to received light intensity and a reset transistor for resetting a node of the photoelectric conversion element to a reset potential; and a sample hold circuit for sample holding a pixel potential according to the potential of the node of the pixel. And the sample hold circuit outputs the differential potential, between a first pixel potential at an end of the integration period after a first reset operation of the pixel and a second pixel potential at an end of a reset noise read period after a second reset operation after the integration period, as a pixel signal. Also in the sample hold circuit, when the second pixel potential during the reset noise read period exceeds a predetermined threshold level, the second pixel potential is set to a predetermined reference potential.
Abstract:
A differential comparator which outputs positive and/or negative logic signals to an output terminal according to the coincidence/non-coincidence of first and second input signal levels inputted to first and second input terminals, respectively, comprises an offset cancel function composed of an offset capacitor device provided on the differential comparator side of the first and second terminals, a first switch for short-circuiting the first and second input terminals in such a way as to form a closed loop including the offset capacitor device, and a second switch for short-circuiting both the connection point between the offset capacitor device and the differential comparator, and the output terminal.
Abstract:
The control inputs of reset switch elements 41 to 45 are commonly connected to a row reset line 51. In a line black clamp type, cathodes as reset ends of photodiodes (31) of optical black pixels 21 to 23 are commonly connected to a potential averaging line 30. In a frame black clamp type, potential averaging lines are connected similarly to respective pixel rows on the vertical scanning start side of an optical black pixel region, and the potential averaging lines may be commonly connected to each other to operate just like one pixel row. A first block includes a pixel array and a vertical scanning circuit, while a second block includes sample and hold circuits, a horizontal scanning circuit, an amplifier and an A/D converter 19. In a low power consumption mode, power supply to the second block is ceased in a light integration period of one frame with performing light integration in the pixel array, power supply to the first and second blocks is performed in a read-out period of one frame to read out integrated signals, and power supply to the first and second blocks is ceased in a power-off period of one frame.
Abstract:
A circuit for stabilizing an electric current includes a constant voltage supplying circuit configured to supply a constant voltage, and a current generating circuit coupled to the constant voltage supplying circuit to generate an electric current based on a predetermined voltage responsive to the constant voltage and to adjust a current amount of the electric current to a predetermined amount by feedback control based on comparison of the predetermined voltage with a voltage appearing across a predetermined resistance responsive to the electric current.
Abstract:
An image sensor, includes: a plurality of pixel circuits, each of which comprises a photoelectric conversion element, a first transistor controlled by a detection signal generated by the photoelectric conversion element, and a second transistor connected to the first transistor and controlled by a select line; and a common amplifier circuit, which is provided commonly to the plurality of pixel circuits, and which has a third transistor connected in parallel to the first transistor, and a current circuit for supplying current to the first and third transistors, wherein an amplifying circuit, which amplifies the detection signal, is formed by the first transistor in a pixel circuit selected by the select line, and by the third transistor in th common amplifier circuit.
Abstract:
An image sensor, includes: a plurality of pixel circuits, each of which comprises a photoelectric conversion element, a first transistor controlled by a detection signal generated by the photoelectric conversion element, and a second transistor connected to the first transistor and controlled by a select line; and a common amplifier circuit, which is provided commonly to the plurality of pixel circuits, and which has a third transistor connected in parallel to the first transistor, and a current circuit for supplying current to the first and third transistors, wherein an amplifying circuit, which amplifies the detection signal, is formed by the first transistor in a pixel circuit selected by the select line, and by the third transistor in th common amplifier circuit.
Abstract:
A heat-resistant material having excellent high-temperature strength and high oxidation resistance at temperatures exceeding 1300.degree. C. The material is a heat-resistant Cr-Fe alloy including at least 60% of Cr and at least 5% of Fe, and having a mean grain size of at least 50 .mu.m and having a melting point of at least 1600 .degree. C., or a composite material composed of the said heat-resistant alloy serving as a metal matrix and a ceramic, and containing up to 40% by volume of a dispersed ceramic phase in the metal matrix.
Abstract:
A solid-state image pickup device and image pickup method eliminate a dark-current component by adjusting the black level appropriately even if the dark-current component varies among horizontal lines. A pixel array includes light-receiving pixel elements and light-blocking pixel elements disposed such that horizontal lines include the light-blocking pixel elements individually. A readout circuit block reads pixel signals of each of the horizontal lines from the pixel array, inputs the pixel signals to ADC circuits (column ADC circuit block), and outputs the pixel signals of the light-blocking pixel elements. A ramp signal generation circuit obtains the pixel signals of the light-blocking pixel elements output from the readout circuit block, generates a ramp signal by using a reference level of AD conversion adjusted for each of the horizontal lines in accordance with the obtained pixel signals of the light-blocking pixel elements, and inputs the ramp signal to the ADC circuits.
Abstract:
The present invention is an image sensor having a pixel array, which arranges pixels having photoelectric conversion circuits in rows and columns; and a pixel selecting circuit for selecting each pixel, wherein the pixel selecting circuit selects pixels of all rows and/or pixels of all columns, and selects a pixel signal at every plural pixels among the selected pixel signals, and pixels selected from a pixel block of a plurality of rows and columns within the pixel array are dispersed within this pixel block.
Abstract:
A method for driving a solid state imaging device which prevents the generation of electronic shutter noise even when the integration time for exposure of a pixel region fluctuates. The solid state imaging device performs a rolling shutter operation that sequentially selects a reset row and a read row separated from each other in accordance with a row spacing based on integration time in the pixel array. A dummy row is selected when a reset row or a read row is not selected. The method includes selecting a dummy reset row so that the total of the number of the reset rows and the reset dummy rows that are simultaneously selected is constant regardless of the number of simultaneously selected reset rows.