Abstract:
In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.
Abstract:
The components are a lower clad layer (102), a first silicon layer (103) that is formed on the lower clad layer (102) as a single body made of silicon of a first conduction type and has a slab region (105) that is disposed at a core (104) and on both sides of the core (104) and connects to the core, a concave section (104a) that is formed in the top surface of the core (104), and a second silicon layer (109) of a second conduction type that is formed inside the concave section (104a) with an intervening dielectric layer (108) to fill the inside of the concave section (104a).
Abstract:
A waveguide connecting structure includes a light branching element (111) for branching light from an input optical waveguide (201) including one core into two branched light components having the same optical power and the same phase, and a twin-arm waveguide (113) including a pair of arm waveguides (113A, 113B) for outputting the light components branched by the light branching element to a slot waveguide (202) including two cores arranged in parallel at a narrow spacing. The pair of arm waveguides have cores formed in a cladding on a substrate and having a refractive index higher than that of the cladding, and are formed such that the spacing between them gradually narrows and becomes equal to the core spacing of the slot waveguide from the core input ends into which the branched light components enter toward the core output ends from which the light components are output to the slot waveguide.
Abstract:
Provided is a semiconductor optical interconnection device capable of transmitting signals between laminated semiconductor chips in a structure where semiconductor chips highly functionalized by being bonded to an optical interconnection chip are laminated. The semiconductor optical interconnection device includes a semiconductor chip 1 and an optical interconnection chip 2. The optical interconnection chip 2 includes an optical element formed thereon (for instance, a photo-sensitive element, a luminous element, or an optical modulator) which has a function relating to signal conversion between light and electricity. The semiconductor chip 1 includes a transmission section 3 (for instance, a coil or an inductor) to transmit signals in a non-contact manner, and a connection section 4 (for instance, a bump) to electrically connect with the optical element.
Abstract:
A waveguide connecting structure includes a light branching element (111) for branching light from an input optical waveguide (201) including one core into two branched light components having the same optical power and the same phase, and a twin-arm waveguide (113) including a pair of arm waveguides (113A, 113B) for outputting the light components branched by the light branching element to a slot waveguide (202) including two cores arranged in parallel at a narrow spacing. The pair of arm waveguides have cores formed in a cladding on a substrate and having a refractive index higher than that of the cladding, and are formed such that the spacing between them gradually narrows and becomes equal to the core spacing of the slot waveguide from the core input ends into which the branched light components enter toward the core output ends from which the light components are output to the slot waveguide.
Abstract:
Disclosed in a method and a device in which a wave number of light in the waveguide mode of a photonic crystal optical waveguide is matched with that of the incident light, or a intensity ratio of electric field to magnetic field of the light in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light, and furthermore, in addition to the method above, the distribution of light intensity on the incident end surface in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light. A photonic crystal optical waveguide and channel optical waveguide are joined together, and the structure of the channel optical waveguide is wedge shaped in the joint section.