Abstract:
A metal film is deposited on one side of a wafer of semiconductor material. A plurality of device regions are formed on the metal film by intersecting strips of a masking material. A layer of metal is plated on the metal film within each device region. The other side of the semiconductor wafer is selectively etched down to the metal film to form an array of semiconductor devices, each device being positioned within the boundaries of a corresponding device region. The devices are then separated from the array by fracturing the metal film along the strips of masking material.
Abstract:
A process for making an MIM (metal-insulator-metal) capacitor comprising thermally depositing or growing a dielectric on a silicon substrate, depositing an electrode on the dielectric, removing the silicon substrate, thereby exposing the dielectric, and depositing a second electrode on the exposed dielectric is disclosed.
Abstract:
Method for depositing a luminescent film comprising vaporizing into a nonreactive carrier gas at least one betadiketonate of yttrium, lanthanum, gadolinium, and lutetium, and at least one beta-diketonate of a lanthanide that is an activator for the luminescent film; and then contacting the vapor-laden carrier gas with a heated substrate. The beta-diketonates are thermally decomposed to form oxides which deposit on the substrate. The method is continued until the desired film thickness is deposited. There may be one or more reactant gases present for preventing the deposition of carbon and/or for producing a luminescent sulfide. The carrier gas may contain a vanadiumcontaining beta-diketonate for producing a luminescent vanadate. The luminescent film may be annealed at temperatures above 500*C to enhance the luminescence of the film.
Abstract:
The device comprises a plurality of side by side transistor cells individually connected by a plurality of lead wires in a side-by-side lead wire array having a central axis. For reducing the effects of variations of mutual inductance among the various lead wires, and for providing a more uniform temperature from cell to cell, the individual lead wires are designed to have a self-inductance the magnitude of which is directly related to the distance of the particular lead wire from the central axis.
Abstract:
A current mirror amplifier using a first and a second transistors with parallelled base-emitter circuits and collector electrodes connected to input and output terminals, respectively, includes a degenerative collector-to-base feedback connection with high current gain. Accordingly, input and output direct currents can be accurately proportioned without an inaccuracy caused by base current flows. The feedback connection may comprise a cascade connection of a third transistor and a fourth complementary conductivity transistor, each connected in commonemitter amplifier configuration.
Abstract:
Method comprises (a) applying to a supporting surface for a viewing-screen structure of a cathode-ray tube a coating comprised of a dichromate-photosensitized organic binder, (b) exposing the coating of a pattern of actinic energy, including both heat energy and ultraviolet energy, (c) wetting the exposed coating with a dilute aqueous solution of an ammonium compound, such as ammonium oxalate, (d) and flushing the coating with an aqueous solvent to remove those portions of the coating that have been hardened solely by heat energy, while retaining portions of the coating that have been hardened by ultraviolet energy.
Abstract:
A complementary symmetry field-effect transistor amplifier employs a feedback path between the input and output terminals thereof. A second pair of complementary symmetry field-effect transistors in series with the transistors of the amplifier is employed to control the operating potentials applied to the amplifier. In one form of the circuit, the signal employed for controlling the conductance of the second pair of transistors is the output signal of the amplifier.
Abstract:
The protection apparatus of this invention incorporates a semiconductor rectifier poled to cut off the current flow to the regulator transistor of a power supply to protect it from damage upon the occurrence of a short circuit.
Abstract:
An image display comprising a viewing screen including a layer of phosphor particles emissive of light of a particular visual color and color filter particles transmissive of light of that color covering between 20 and 80 percent of the surfaces of the phosphor particles.
Abstract:
A fail-safe high voltage protection circuit for a television receiver includes means for rectifying pulses developed in the high voltage transformer for developing a direct current voltage proportional thereto for providing an additional bias voltage for the automatic frequency control (AFC) transistor. If the developed high voltage pulse becomes excessive, the corresponding increased bias supplied to the AFC transistor causes an increase in the horizontal oscillator frequency resulting in an unviewable raster.