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    SiC EPITAXIAL WAFER, AND METHOD OF MANUFACTURING THE SAME
    32.
    发明申请
    SiC EPITAXIAL WAFER, AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20230055999A1

    公开(公告)日：2023-02-23

    申请号：US17981138

    申请日：2022-11-04

    Applicant: SHOWA DENKO K.K.

    Inventor： Yoshitaka Nishihara ,  Keisuke Fukada

    IPC: H01L29/16 ,  H01L21/02 ,  H01L29/36 ,  C30B25/02 ,  C30B29/36 ,  C30B25/20

    Abstract: A method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a SiC single crystal substrate, the method including identifying a total number of large-pit defects caused by micropipes in the SiC single crystal substrate and large-pit defects caused by substrate carbon inclusions, both of which are contained in the SiC epitaxial layer, using microscopic and photoluminescence images. Also disclosed is a method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a single crystal substrate, the method including identifying locations of the large-pit defects caused by micropipes in the SiC single crystal substrate and the large-pit defects caused by substrate carbon inclusions in the SiC epitaxial layer, using microscopic and photoluminescence images.

    SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SiC EPITAXIAL WAFER
    36.
    发明申请
    SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SiC EPITAXIAL WAFER 有权

    公开(公告)号：US20230039660A1

    公开(公告)日：2023-02-09

    申请号：US17879118

    申请日：2022-08-02

    Applicant: SHOWA DENKO K.K.

    Inventor： Kensho TANAKA ,  Yoshikazu Umeta

    IPC: H01L29/16 ,  H01L21/02

    Abstract: A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron in the center of the epitaxial layer is less than 5.0×1012 cm−3.

    LITHIUM ION-CONDUCTIVE OXIDE AND USE FOR SAME
    38.
    发明申请
    LITHIUM ION-CONDUCTIVE OXIDE AND USE FOR SAME 有权

    公开(公告)号：US20230026839A1

    公开(公告)日：2023-01-26

    申请号：US17785619

    申请日：2020-12-25

    Applicant: SHOWA DENKO K.K.

    Inventor： Ryosuke SEI ,  Kunchan LEE

    IPC: H01M10/0562

    Abstract: The present invention aims to provide a lithium ion-conducting oxide capable of providing a solid electrolyte with an excellent ion conductivity, and a solid electrolyte, a sintered body, an electrode material or an electrode and an all-solid-state battery using the same. The lithium ion-conducting oxide of the present invention includes at least lithium, tantalum, phosphorus, silicon, and oxygen as constituent elements, has a peak in a region of −20.0 ppm to 0.0 ppm on the solid-state 31P-NMR spectrum, and has a peak in a range of −80.0 ppm to −100.0 ppm on the solid-state 29Si-NMR spectrum.

    MAGNETIC SENSOR
    39.
    发明申请
    MAGNETIC SENSOR 有权

    公开(公告)号：US20230020837A1

    公开(公告)日：2023-01-19

    申请号：US17785504

    申请日：2020-11-17

    Applicant: SHOWA DENKO K.K.

    Inventor： Daizo ENDO ,  Tatsunori SHINO

    IPC: G01R33/06

    Abstract: A magnetic sensor includes: a sensitive layer made of a soft magnetic material with uniaxial magnetic anisotropy, the sensitive layer being configured to sense a magnetic field by a magnetic impedance effect; and a magnet layer made of a magnetized hard magnetic material and disposed to face the sensitive layer. The magnet layer is configured to apply a DC magnetic bias Hb in a direction intersecting a direction of the uniaxial magnetic anisotropy in the sensitive layer, the DC magnetic bias Hb having a greater value than an anisotropic magnetic field Hk of the sensitive layer.

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