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    METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH ELECTROSTATIC-DISCHARGE PROTECTION AND VOLTAGE-STABILIZING CAPACITOR AND METHOD FOR MANUFACTURING THE SAME
    31.
    发明申请
    METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH ELECTROSTATIC-DISCHARGE PROTECTION AND VOLTAGE-STABILIZING CAPACITOR AND METHOD FOR MANUFACTURING THE SAME 有权
    具有静电放电保护和电压稳定电容器的金属氧化物半导体场效应晶体管及其制造方法

    公开(公告)号：US20080164505A1

    公开(公告)日：2008-07-10

    申请号：US11968874

    申请日：2008-01-03

    Applicant: YI-LIN CHEN

    Inventor： YI-LIN CHEN

    IPC: H01L21/336 ,  H01L29/94

    CPC classification number: H01L29/1087 ,  H01L27/0266 ,  H01L29/78

    Abstract: The present invention relates to a metal-oxide-semiconductor field-effect transistor (MOSFET) with electrostatic-discharge (ESD) protection and a voltage-stabilizing capacitor, and a method for manufacturing the same and is applied to a chip, including a P-type substrate, a conductor layer, a first N-type doping region, a second N-type doping region, and an N-type well. The conductor layer is coupled to the ground; the first N-type doping region is coupled to the power supply; the second N-type doping region is coupled to a VDD pad (power-supply pad). Thereby, when the chip is not installed or not operating, the MOSFET can be used for ESD protection. When the chip is operating, the conductor layer, the first N-type doping region, the second N-type doing region, and the N-type well form a gate capacitor as a voltage-stabilizing capacitor between the power supply and the ground. Hence, the objective of fully utilization is achieved. In addition, the chip size is saved and thus the cost thereof is reduced.

    Abstract translation: 本发明涉及具有静电放电（ESD）保护的金属氧化物半导体场效应晶体管（MOSFET）和稳压电容器及其制造方法，并且应用于包括P 型衬底，导体层，第一N型掺杂区，第二N型掺杂区和N型阱。 导体层耦合到地面; 第一N型掺杂区域耦合到电源; 第二N型掺杂区域耦合到VDD焊盘（电源焊盘）。 因此，当芯片未安装或不工作时，MOSFET可用于ESD保护。 当芯片工作时，导体层，第一N型掺杂区域，第二N型区域和N型阱形成作为电源和地之间的稳压电容器的栅极电容器。 因此，实现了充分利用的目标。 此外，节省了芯片尺寸，因此降低了其成本。

    CIRCUIT AND METHOD FOR CALIBRATING DATA CONTROL SIGNAL
    32.
    发明申请
    CIRCUIT AND METHOD FOR CALIBRATING DATA CONTROL SIGNAL 有权
    用于校准数据控制信号的电路和方法

    公开(公告)号：US20080130377A1

    公开(公告)日：2008-06-05

    申请号：US11948745

    申请日：2007-11-30

    Applicant: Yi Lin CHEN ,  Cheng Hsin CHANG

    Inventor： Yi Lin CHEN ,  Cheng Hsin CHANG

    IPC: G11C7/00

    CPC classification number: G11C7/1051 ,  G11C7/1066 ,  G11C7/1078 ,  G11C7/1093 ,  G11C7/222 ,  G11C2207/2254

    Abstract: A circuit for calibrating a data control signal comprises a time-delay compensation circuit and a voltage-control delay circuit. The time-delay compensation circuit receives two complementary signals and a direct current voltage which has two voltage cross points with the two complementary signals respectively, and outputs a control voltage according to a time difference between the two voltage cross points. The voltage-control delay circuit delays a data control signal for a predetermined time according to the control voltage, thereby eliminating signal skew between the data control signal and a data signal.

    Abstract translation: 用于校准数据控制信号的电路包括时间延迟补偿电路和电压控制延迟电路。 时间延迟补偿电路分别接收两个互补信号和一个具有两个互补信号的两个电压交叉点的直流电压，并根据两个电压交叉点之间的时间差输出控制电压。 电压控制延迟电路根据控制电压使数据控制信号延迟预定时间，从而消除数据控制信号和数据信号之间的信号偏移。

    Using V-groove etching method to reduce alignment mark asymmetric damage in integrated circuit process
    33.
    发明授权
    Using V-groove etching method to reduce alignment mark asymmetric damage in integrated circuit process 失效
    采用V沟槽刻蚀法减少集成电路工艺中的对准标记不对称损伤

    公开(公告)号：US06872630B1

    公开(公告)日：2005-03-29

    申请号：US10170247

    申请日：2002-06-12

    Applicant: Yi-Lin Chen

    Inventor： Yi-Lin Chen

    IPC: G03F9/00 ,  H01L23/544 ,  H01L21/76

    CPC classification number: G03F9/708 ,  G03F9/7084 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A new method is provided for the creation of an alignment mark. V-groove etching is applied whereby this anisotropic etch stops at the (1,1,1) crystal direction of the silicon of the substrate. The invention applies a wet etchant to the surface of monocrystalline silicon of the silicon substrate by using a solution containing a mixture of potassium hydroxide (KOH) or N2H4 or tetramethyl ammonium hydroxide (TMAH). This solution anisotropically etches the silicon substrate, forming grooves in the substrate having sidewalls that are sloped at an angle of about 54 degrees with the horizontal. The slope of the sidewalls is a function of the different etch rates of monocrystalline silicon along the different crystalline orientations. The surface of the substrate represents planes of the silicon, which etches faster than the sloped sidewalls that represent the plane. The KOH/N2H4/TMAH etch stops on the plane of the silicon substrate.

    Abstract translation: 提供了一种创建对齐标记的新方法。 施加V沟槽蚀刻，由此使该各向异性蚀刻停止在衬底的硅的（1,1,1）晶体方向。 本发明通过使用含有氢氧化钾（KOH）或N 2 H 4或四甲基氢氧化铵（TMAH）的混合物的溶液将湿蚀刻剂应用于硅衬底的单晶硅表面。 该溶液各向异性地蚀刻硅衬底，在衬底中形成具有与水平面成大约54度的角度倾斜的侧壁的凹槽。 侧壁的斜率是沿着不同结晶取向的单晶硅的不同蚀刻速率的函数。 衬底的表面代表硅的100平面，其蚀刻比表示<111>平面的倾斜侧壁快。 KOH / N2H4 / TMAH蚀刻停止在硅衬底的<111>平面上。

    Recovery and regeneration of sulfuric acid
    35.
    发明授权
    Recovery and regeneration of sulfuric acid 失效
    回收和再生硫酸

    公开(公告)号：US5547655A

    公开(公告)日：1996-08-20

    申请号：US348151

    申请日：1994-11-28

    Applicant: Tse-Chaun Chou ,  Yi-Lin Chen

    Inventor： Tse-Chaun Chou ,  Yi-Lin Chen

    IPC: C01B17/92 ,  C01B17/90

    CPC classification number: C01B17/92 ,  Y10S423/02

    Abstract: Using generated active intermediates or species simultaneously to remove water and organic compounds from the spent sulfuric acid catalyst of the alkylation of olefins and alkanes is disclosed in this invention. Over 90% water and 95% organic compounds of the spent catalyst can be removed by this invention under mild operating conditions, less than 20 atms and in the temperature range from -50.degree. to 250.degree. C. This invention provides a novel process instead of the traditional or commercial process by combustion and treatment of the spent catalyst at high temperature. It is significant to simplify comparing with the traditional process, and is a safe, simple, clean or pollutionless, and cheap one-stage process.

    Abstract translation: 在本发明中公开了使用生成的活性中间体或物质同时从用于烯烃和烷烃的烷基化的废硫酸催化剂中除去水和有机化合物。 本发明可以在温和的操作条件下，小于20atms，在-50℃至250℃的温度范围内除去90％以上的水和95％的废催化剂有机化合物。本发明提供了一种新的方法，而不是 传统或商业过程通过在高温下燃烧和处理废催化剂。 简化与传统过程的比较，是一个安全，简单，清洁或无污染，廉价的一阶段过程是重要的。

    TWO-DIMENSIONAL ENCOUNTER LOCATION DETECTION
    36.
    发明申请
    TWO-DIMENSIONAL ENCOUNTER LOCATION DETECTION 审中-公开

    公开(公告)号：US20190007924A1

    公开(公告)日：2019-01-03

    申请号：US16062103

    申请日：2015-12-26

    Applicant: Yi Lin CHEN ,  Mi Sun PARK ,  Shao-Wen YANG ,  Lei YANG ,  Intel Corporation

    Inventor： Yi Lin Chen ,  Mi Sun Park ,  Shao-Wen Yang ,  Lei Yang

    IPC: H04W64/00 ,  H04W4/02 ,  H04W4/029 ,  H04W4/70

    CPC classification number: H04W64/003 ,  G01S5/02 ,  G01S11/06 ,  H04W4/027 ,  H04W4/029 ,  H04W4/70

    Abstract: Sensors provisioned on a first device detect a movement of the first device corresponding to the first device changing position within an environment. Location information for the first device is updated based on the position change. A plurality of signals are detected, at the first device, from a second device in the environment, determine, and a distance between the first and second devices is determined based on each of the signals. From the signals, another change in position of the first device within the environment is determined and the location information updated for the first device. The movement is detected at the first device at an instance between two of the plurality of signals, and location information for the first device based on the first position change is updated prior to detection of the later of the two signals in the plurality of signals.

    STRIKING TRAINING DEVICE
    37.
    发明申请
    STRIKING TRAINING DEVICE 审中-公开

    公开(公告)号：US20170348577A1

    公开(公告)日：2017-12-07

    申请号：US15175619

    申请日：2016-06-07

    Applicant: YI-LIN CHEN

    Inventor： YI-LIN CHEN

    IPC: A63B69/20 ,  A63B69/00

    CPC classification number: A63B69/208 ,  A63B69/004 ,  A63B69/20

    Abstract: A striking training device is provided, including: a support body, having a seat end and an assembling end which are located along a first direction, the assembling end including an assembling mechanism; a hit mechanism, including a first hit member and at least one second hit member, the first hit member including a first mounting structure, each said second hit member including a second mounting structure, the first mounting structure being detachably assembled with the assembling mechanism positionably, each said second hit member being pivoted to the assembling structure via the second mounting structure so that the second hit member being rotatable laterally relative to the first direction. Both or one of the first hit member and the at least one second hit member are/is optionally assembled with the assembling structure.

    Transformer
    38.
    发明授权
    Transformer 有权
    变压器

    公开(公告)号：US08994487B2

    公开(公告)日：2015-03-31

    申请号：US13617408

    申请日：2012-09-14

    Applicant: Han-Hsing Lin ,  Hsiang-Yi Tseng ,  Ching-Hsiang Tien ,  Hsin-Wei Tsai ,  Yi-Lin Chen ,  Chun-Ping Chen

    Inventor： Han-Hsing Lin ,  Hsiang-Yi Tseng ,  Ching-Hsiang Tien ,  Hsin-Wei Tsai ,  Yi-Lin Chen ,  Chun-Ping Chen

    IPC: H01F27/29 ,  H01F27/24 ,  H01F27/28 ,  H01F27/30 ,  H01F27/32

    CPC classification number: H01F27/292 ,  H01F27/325 ,  H01F2027/297

    Abstract: A transformer includes a bobbin, at least one primary winding coil, at least one secondary winding coil, and a magnetic core assembly. The bobbin includes a main body, plural extension structures, and plural pin groups. The main body includes a channel, plural winding sections, a first connecting seat, and a second connecting seat. The plural extension structures are connected with the first connecting seat and the second connecting seat, respectively. In addition, each of the plural extension structures has a notch and a stepped structure, and the stepped structure comprises plural stepped parts. Each of the primary winding coil and the secondary winding coil includes plural outlet terminals. The plural outlet terminals of the secondary winding coil are respectively disposed on the plural stepped parts of the stepped structure and fixed on the pin group which is disposed on one of the extension structures.

    Abstract translation: 变压器包括线轴，至少一个初级绕组线圈，至少一个次级绕组线圈和磁芯组件。 线轴包括主体，多个延伸结构和多个销组。 主体包括通道，多个卷绕部分，第一连接座和第二连接座。 多个延伸结构分别与第一连接座和第二连接座连接。 此外，多个延伸结构中的每一个具有凹口和阶梯结构，并且台阶结构包括多个台阶部。 初级绕组线圈和次级绕组线圈中的每一个包括多个出线端子。 次级绕组线圈的多个出口端子分别设置在阶梯状结构的多个阶梯部分上，并固定在设置在延伸结构之一上的销组上。

    Transformer structure
    40.
    发明授权
    Transformer structure 失效
    变压器结构

    公开(公告)号：US08643460B2

    公开(公告)日：2014-02-04

    申请号：US13614967

    申请日：2012-09-13

    Applicant: Hsiang-Yi Tseng ,  Hsin-Wei Tsai ,  Ching-Hsiang Tien ,  Han-Hsing Lin ,  Yi-Lin Chen

    Inventor： Hsiang-Yi Tseng ,  Hsin-Wei Tsai ,  Ching-Hsiang Tien ,  Han-Hsing Lin ,  Yi-Lin Chen

    IPC: H01F27/30 ,  H01F27/28 ,  H01F27/29 ,  H01F27/24

    CPC classification number: H01F27/325 ,  H01F27/06 ,  H01F27/306 ,  H01F2027/065 ,  H01F2027/297

    Abstract: A transformer structure includes a bobbin, a conductive base, a first winding coil, plural second winding coils, and a magnetic core assembly. The bobbin includes a main body and a channel. The main body has a first winding section and plural first pins. The plural first pins are located at bilateral sides of the main body. The channel runs through the main body. The conductive base is disposed on a bottom side of the bobbin, and includes at least one connecting part. Through the connecting part of the conductive base, at least a portion of the plural first pins are electrically connected with each other. The first winding coil is wound around the first winding section. The second winding coils are connected with corresponding first pins. The magnetic core assembly is partially embedded into the channel of the bobbin.

    Abstract translation: 变压器结构包括线轴，导电基座，第一绕组线圈，多个第二绕组线圈和磁芯组件。 线轴包括主体和通道。 主体具有第一绕组部分和多个第一引脚。 多个第一销位于主体的双侧。 通道穿过主体。 导电基底设置在线轴的底侧，并且包括至少一个连接部。 通过导电基体的连接部分，多个第一引脚的至少一部分彼此电连接。 第一绕组线圈缠绕在第一绕组部分上。 第二绕组线圈与相应的第一引脚连接。 磁芯组件部分嵌入线轴的通道中。

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