公开(公告)号：US10730786B2

公开(公告)日：2020-08-04

申请号：US16392714

申请日：2019-04-24

Applicant: AGC INC.

Inventor： Hirofumi Tokunaga ,  Kazutaka Ono ,  Motoyuki Hirose

IPC: C03C3/087 ,  C03C3/091 ,  C03B5/18

Abstract: The present invention relates to an alkali-free glass and a method for producing the same. More specifically, the present invention relates to an alkali-free glass suitable as a glass for substrates of various displays such as liquid crystal display, and a method for producing the same. According to the present invention, an alkali-free glass suitable as a glass for display substrates, in which inclusion of bubbles is greatly reduced by virtue of containing a refining agent and suppressing the stirring reboil, is obtained.

公开(公告)号：US12122713B2

公开(公告)日：2024-10-22

申请号：US17016646

申请日：2020-09-10

Applicant: AGC INC.

Inventor： Hirofumi Tokunaga ,  Kazutaka Ono

IPC: C03C3/087 ,  C03C3/091 ,  G11B5/73 ,  G11B7/2531

CPC classification number: C03C3/087 ,  C03C3/091 ,  G11B5/73921 ,  G11B7/2531 ,  C03C2201/12 ,  C03C2203/20

Abstract: A glass has a density of 2.60 g/cm3 or lower, a Young's modulus of 88 GPa or more, a strain point of 650 to 720° C., a temperature T4 at which a glass viscosity reaches 104 dPa·s of 1,320° C. or lower, a glass surface devitrification temperature (Tc) of T4+20° C. or lower, and an average coefficient of thermal expansion of 30×10−7 to 43×10−7/° C. at 50 to 350° C. The glass contains, as represented by mol % based on oxides, 50 to 80% of SiO2, 8 to 20% of Al2O3, 0 to 0.5% in total of at least one kind of alkali metal oxide selected from the group consisting of Li2O, Na2O and K2O, and 0 to 1% of P2O5.

公开(公告)号：US12037283B2

公开(公告)日：2024-07-16

申请号：US17174615

申请日：2021-02-12

Applicant: AGC Inc.

Inventor： Kazutaka Ono ,  Shuhei Nomura ,  Nobutaka Kidera ,  Nobuhiko Takeshita

IPC: C03C3/089 ,  C03C3/091 ,  C03C4/16 ,  H05K1/02 ,  H05K1/03 ,  C03B17/02 ,  C03B17/06 ,  C03B19/14 ,  C03B25/08 ,  C03C3/06 ,  C03C3/087 ,  C03C3/118 ,  C03C13/04

CPC classification number: C03C3/089 ,  C03C3/091 ,  C03C4/16 ,  H05K1/024 ,  H05K1/03 ,  C03B17/02 ,  C03B17/064 ,  C03B19/14 ,  C03B25/08 ,  C03C3/06 ,  C03C3/087 ,  C03C3/118 ,  C03C13/046 ,  C03C2204/08 ,  C03C2217/253

Abstract: A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO2; 0 to 15% of Al2O3; 13 to 23% of B2O3; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

公开(公告)号：US11715673B2

公开(公告)日：2023-08-01

申请号：US17367762

申请日：2021-07-06

Applicant: AGC Inc.

Inventor： Yu Hanawa ,  Shigeki Sawamura ,  Shuhei Nomura ,  Kazutaka Ono ,  Nobuhiko Takeshita ,  Keisuke Hanashima

IPC: B32B17/06 ,  H01L23/15 ,  C03C27/04 ,  C03C3/085 ,  C03C3/087 ,  C03C3/091 ,  C03C3/093 ,  B32B1/00 ,  B32B9/00 ,  C03C17/22 ,  H01L23/13

CPC classification number: H01L23/15 ,  B32B1/00 ,  B32B9/005 ,  B32B17/06 ,  C03C3/085 ,  C03C3/087 ,  C03C3/091 ,  C03C3/093 ,  C03C17/22 ,  C03C27/04 ,  H01L23/13 ,  B32B2307/30 ,  B32B2457/14

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 μm to 300 μm, and an inclination angle due to the warpage of 0.0004° to 0.12°.

公开(公告)号：US11239549B2

公开(公告)日：2022-02-01

申请号：US17022365

申请日：2020-09-16

Applicant: AGC Inc.

Inventor： Shuhei Nomura ,  Kazutaka Ono

IPC: H01Q1/38 ,  H01Q1/22 ,  H01Q9/04 ,  H01Q15/00

Abstract: Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}≤300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

公开(公告)号：US11066325B2

公开(公告)日：2021-07-20

申请号：US16161220

申请日：2018-10-16

Applicant: AGC Inc.

Inventor： Hirofumi Tokunaga ,  Kazutaka Ono

IPC: C03C3/091

Abstract: To provide an alkali-free glass having a high specific elastic modulus, a suitable strain point, a low density, a not too low thermal expansion coefficient, a good clarity and a good solubility.
An alkali-free glass, which comprises, as represented by mol % based on oxides, SiO2: 62 to 70%, Al2O3: 11 to 14%, B2O3: 3 to 6%, MgO: 7 to 10%, CaO: 3 to 9%, SrO: 1 to 5% and BaO: 0 to 1%, wherein [SiO2]+0.7[Al2O3]+1.2[B2O3]+0.5[MgO]+0.4[CaO]−0.25[SrO]−0.88[BaO] is at least 85, [SiO2]+0.45[Al2O3]+0.21[B2O3]−0.042[MgO]+0.042[CaO]+0.15[SrO]+0.38[BaO] is from 72 to 75, 0.4[SiO2]+0.4[Al2O3]+0.25[B2O3]−0.7[MgO]−0.88[CaO]−1.4[SrO]−1.7[BaO] is at most 19, the specific modulus is at least 32 MN·m/kg, the strain point is from 690 to 710° C., the density is at most 2.54 g/cm3, the average thermal expansion coefficient at from 50 to 350° C. is at least 35×10−7/° C., and the temperature T2 at which the glass viscosity reaches 102 dPa·s is from 1,610 to 1,680° C.

公开(公告)号：US11053160B2

公开(公告)日：2021-07-06

申请号：US16282363

申请日：2019-02-22

Applicant: AGC Inc.

Inventor： Hirofumi Tokunaga ,  Kazutaka Ono ,  Motoyuki Hirose

IPC: C03C3/087 ,  C03C3/091 ,  C03C3/093

Abstract: To provide an alkali-free glass, of which the compaction is low, the strain point is high, and the ultraviolet transmittance is high, and which is easy to melt.
An alkali-free glass, which comprises, as represented by mol % based on oxides, SiO2
from 65 to 75, Al2O3
from 9 to 15, B2O3
from 0 to 3, MgO
from 0 to 12, CaO
from 0 to 8, SrO
from 0 to 6, and BaO
from 0 to 5, wherein MgO+CaO+SrO+BaO is from 12 to 22, and 4.84[Fe2O3]+5.65[Na2O]+4.03[K2O]+4.55[SnO2] is at most 0.55, and of which the compaction is at most 80 ppm.

公开(公告)号：US11021389B2

公开(公告)日：2021-06-01

申请号：US16941631

申请日：2020-07-29

Applicant: AGC Inc.

Inventor： Seiji Inaba ,  Yasunari Saito ,  Kiyoshi Tamai ,  Kazutaka Ono ,  Yuha Kobayashi

IPC: B32B17/00 ,  C03C3/087 ,  C03C3/085 ,  H01L23/15 ,  C03C3/095 ,  C03C3/091 ,  C03C3/097

Abstract: A supporting glass substrate has a ratio of a Young's modulus (GPa) to a density (g/cm3) that is 37.0 (GPa·cm3/g) or more and the ratio has a value larger than a ratio calculation value, the ratio calculation value being a ratio of a Young's modulus (GPa) calculated from a composition to a density (g/cm3). The ratio calculation value is represented by the following expression: α=2·Σ{(Vi·Gi)/Mi·Xi}, where, in the expression, Vi is a filling parameter of a metal oxide contained in the supporting glass substrate, Gi is a dissociation energy of a metal oxide contained in the supporting glass substrate, Mi is a molecular weight of a metal oxide contained in the supporting glass substrate, and Xi is a molar ratio of a metal oxide contained in the supporting glass substrate.

公开(公告)号：US10974987B2

公开(公告)日：2021-04-13

申请号：US16351007

申请日：2019-03-12

Applicant: AGC Inc.

Inventor： Kazutaka Ono ,  Shuhei Nomura ,  Nobutaka Kidera ,  Nobuhiko Takeshita

IPC: C03C3/089 ,  C03C3/091 ,  C03B25/08 ,  C03B19/14 ,  C03C4/16 ,  H05K1/03 ,  C03B17/02 ,  C03B17/06 ,  H05K1/02 ,  C03C3/06 ,  C03C3/087 ,  C03C3/118 ,  C03C13/04

Abstract: The present invention relates to a glass substrate for a high-frequency device, which includes SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of Al2O3 and B2O3 in the range of 1-40% in terms of mole percent on the basis of oxides and having a molar ratio represented by Al2O3/(Al2O3+B2O3) in the range of 0-0.45, in which at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

公开(公告)号：US20190161387A1

公开(公告)日：2019-05-30

申请号：US16264722

申请日：2019-02-01

Applicant: AGC INC.

Inventor： Shuhei Nomura ,  Kazutaka Ono

IPC: C03C3/091 ,  C03C4/20 ,  H01L27/12 ,  H01L29/786 ,  H01L21/762

Abstract: A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |Δα50/100| of a difference between an average coefficient of thermal expansion α50/100 of the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |Δα100/200| of a difference between an average coefficient of thermal expansion α100/200 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |Δα200/300| of a difference between an average coefficient of thermal expansion α200/300 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.