公开(公告)号：US20210405545A1

公开(公告)日：2021-12-30

申请号：US17471363

申请日：2021-09-10

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson Middlebrooks ,  Willem Maria Julia Marcel Coene ,  Frank Arnoldus Johannes Maria Driessen ,  Adrianus Cornelis Matheus Koopman ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G03F7/20 ,  G06N20/00 ,  G06F30/367 ,  G06N7/00

Abstract: A defect prediction method for a device manufacturing process involving production substrates processed by a lithographic apparatus, the method including training a classification model using a training set including measured or determined values of a process parameter associated with the production substrates processed by the device manufacturing process and an indication regarding existence of defects associated with the production substrates processed in the device manufacturing process under the values of the process parameter, and producing an output from the classification model that indicates a prediction of a defect for a substrate.

公开(公告)号：US11022900B2

公开(公告)日：2021-06-01

申请号：US16931002

申请日：2020-07-16

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Stefan Hunsche ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G03F7/20 ,  G03F7/213 ,  G03F7/22

Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

公开(公告)号：US10761432B2

公开(公告)日：2020-09-01

申请号：US15961377

申请日：2018-04-24

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Stefan Hunsche ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G03F7/20 ,  G03F7/213 ,  G03F7/22

Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

公开(公告)号：US10607334B2

公开(公告)日：2020-03-31

申请号：US15533614

申请日：2015-11-13

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson Middlebrooks ,  Markus Gerardus Martinus Maria Van Kraaij ,  Maxim Pisarenco ,  Adrianus Cornelis Matheus Koopman ,  Stefan Hunsche ,  Willem Marie Julia Marcel Coene

IPC: G06T7/00 ,  G03F7/20

Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.

公开(公告)号：US20180196357A1

公开(公告)日：2018-07-12

申请号：US15912036

申请日：2018-03-05

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson Middlebrooks ,  Niels Geypen ,  Hendrik Jan Hidde Smilde ,  Alexander Straaijer ,  Maurits Van Der Schaar ,  Markus Gerardus Martinus Maria Van Kraaij

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.