公开(公告)号：US20230236515A1

公开(公告)日：2023-07-27

申请号：US18001255

申请日：2021-06-08

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Patrick WARNAAR ,  Franciscus Godefridus Casper BIJNEN ,  Olger Victor ZWIER

IPC: G03F7/00

CPC classification number: G03F7/70683 ,  G03F7/70633

Abstract: Disclosed is target arrangement comprising a first target region having at least a first pitch and at least a second pitch a second target region having at least a third pitch, wherein a portion of the first target region having a second pitch overlaps with a portion of the second target region.

公开(公告)号：US20220350254A1

公开(公告)日：2022-11-03

申请号：US17621494

申请日：2020-06-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Maxim PISARENCO ,  Maurits VAN DER SCHAAR ,  Huaichen ZHANG ,  Marie-Claire VAN LARE

IPC: G03F7/20

Abstract: A method for applying a deposition model in a semiconductor manufacturing process. The method includes predicting a deposition profile of a substrate using the deposition model; and using the predicted deposition profile to enhance a metrology target design. The deposition model can be calibrated using experimental cross-section profile information from a layer of a physical substrate. In some embodiments, the deposition model is a machine-learning model, and calibrating the deposition model includes training the machine-learning model. The metrology target design may include an alignment metrology target design or an overlay metrology target design, for example.

公开(公告)号：US20210055663A1

公开(公告)日：2021-02-25

申请号：US17081325

申请日：2020-10-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits VAN DER SCHAAR ,  Patrick WARNAAR ,  Youping ZHANG ,  Arie Jeffrey DEN BOEF ,  Feng XIAO ,  Martin EBERT

IPC: G03F7/20 ,  G03F9/00

Abstract: A method includes projecting an illumination beam of radiation onto a metrology target on a substrate, detecting radiation reflected from the metrology target on the substrate, and determining a characteristic of a feature on the substrate based on the detected radiation, wherein a polarization state of the detected radiation is controllably selected to optimize a quality of the detected radiation.

公开(公告)号：US20190278190A1

公开(公告)日：2019-09-12

申请号：US16421697

申请日：2019-05-24

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson MIDDLEBROOKS ,  Niels GEYPEN ,  Hendrik Jan Hidde SMILDE ,  Alexander STRAAIJER ,  Maurits VAN DER SCHAAR ,  Markus Gerardus Martinus Maria VAN KRAAIJ

IPC: G03F7/20

Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.

公开(公告)号：US20190235394A1

公开(公告)日：2019-08-01

申请号：US16257656

申请日：2019-01-25

Applicant: ASML NETHERLANDS B.V.

Inventor： Reinder Teun PLUG ,  Maurits VAN DER SCHAAR

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70625 ,  G03F7/7015 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  G03F9/7088 ,  H01L23/544

Abstract: A method of patterning of at least a layer in a semiconductor device, the method including a patterning step by a patterning means, wherein the patterned layer comprises sensing radiation transmissive portions and sensing radiation blocking portions.

公开(公告)号：US20190056220A1

公开(公告)日：2019-02-21

申请号：US16102145

申请日：2018-08-13

Applicant: ASML Netherlands B.V.

Inventor： Farzad FARHADZADEH ,  Mohammadreza HAJIAHMADI ,  Maurits VAN DER SCHAAR ,  Murat BOZKURT

IPC: G01B11/27

Abstract: Disclosed is a method and associated apparatus of determining a performance parameter (e.g., overlay) of a target on a substrate, and an associated metrology apparatus. The method comprises estimating a set of narrowband measurement values from a set of wideband measurement values relating to the target and determining the performance parameter from said set of narrowband measurement values. The wideband measurement values relate to measurements of the target performed using wideband measurement radiation and may correspond to different central wavelengths. The narrowband measurement values may comprise an estimate of the measurement values which would be obtained from measurement of the target using narrowband measurement radiation having a bandwidth narrower than said wideband measurement radiation.

公开(公告)号：US20180373168A1

公开(公告)日：2018-12-27

申请号：US16063190

申请日：2016-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Maurits VAN DER SCHAAR ,  Youping ZHANG ,  Hua XU

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/70683 ,  G03F9/7076 ,  G03F9/7088

Abstract: A target structure, wherein the target structure is configured to be measured with a metrology tool that has a diffraction threshold; the target structure including: one or more patterns supported on a substrate, the one or more patterns being periodic with a first period in a first direction and periodic with a second period in a second direction, wherein the first direction and second direction are different and parallel to the substrate, and the first period is equal to or greater than the diffraction threshold and the second period is less than the diffraction threshold.

公开(公告)号：US20180017881A1

公开(公告)日：2018-01-18

申请号：US15650401

申请日：2017-07-14

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Murat BOZKURT ,  Patrick WARNAAR ,  Stefan Cornelis Theodorus VAN DER SANDEN

IPC: G03F9/00 ,  G01N21/956 ,  G03F7/20

CPC classification number: G03F9/7046 ,  G01N21/956 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7019

Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.

公开(公告)号：US20170293233A1

公开(公告)日：2017-10-12

申请号：US15477602

申请日：2017-04-03

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Richard Johannes Franciscus VAN HAREN ,  Everhardus Cornelis MOS ,  Youping ZHANG

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/28

CPC classification number: G03F7/70633 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70683 ,  H01L22/00 ,  H01L22/12 ,  H01L23/544

Abstract: Disclosed is a method of measuring a target, associated substrate comprising a target and computer program. The target comprises overlapping first and second periodic structures. The method comprising illuminating the target with measurement radiation and detecting the resultant scattered radiation. The pitch of the second periodic structure is such, relative to a wavelength of the measurement radiation and its angle of incidence on the target, that there is no propagative non-zeroth diffraction at the second periodic structure resultant from said measurement radiation being initially incident on said second periodic structure. There may be propagative non-zeroth diffraction at the second periodic structure which comprises further diffraction of one or more non-zero diffraction orders resultant from diffraction by the first periodic structure. Alternatively, the detected scattered radiation may comprise non-zero diffraction orders obtained from diffraction at said the periodic structure which have been disturbed in the near field by the second periodic structure.

公开(公告)号：US20170176870A1

公开(公告)日：2017-06-22

申请号：US15384084

申请日：2016-12-19

Applicant: ASML Netherlands B.V.

Inventor： Paul Christiaan HINNEN ,  Simon Gijsbert Josephus MATHIJSSEN ,  Maikel Robert GOOSEN ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/702 ,  G03F7/70641 ,  G03F7/70683 ,  G03F7/7085

Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (θ). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.