公开(公告)号：US20230377882A1

公开(公告)日：2023-11-23

申请号：US18196733

申请日：2023-05-12

Applicant: Analog Devices, Inc.

Inventor： James G. Fiorenza ,  Daniel Piedra

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L21/02694 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/66462 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254

Abstract: During gallium nitride (GaN) semiconductor fabrication, a nucleation layer, e.g., aluminum nitride (AlN) may be formed superjacent a substrate, e.g., silicon carbide (SiC). Next, a semiconductor layer, such as including GaN, may be formed over the nucleation layer. This disclosure describes various techniques for forming a thick enough layer of gallium nitride (GaN) to ensure complete coalescence and minimal surface roughness, then removing the excess GaN until a desired thickness is achieved. In some examples, the GaN removal may be performed by desorption, such as may be performed in-situ by using hydrogen gas close to the growth temperature.

公开(公告)号：US20230058073A1

公开(公告)日：2023-02-23

申请号：US18047914

申请日：2022-10-19

Applicant: Analog Devices, Inc.

Inventor： Puneet Srivastava ,  James G. Fiorenza

IPC: H01L29/40 ,  H01L29/205 ,  H01L29/66 ,  H01L21/02 ,  H01L29/778

Abstract: A semiconductor device includes a layer of a first semiconducting material, where the first semiconducting material is epitaxially grown to have a crystal structure of a first substrate. The semiconductor device further includes a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting material to form a heterojunction with the layer of the first semiconducting material. The semiconductor device further includes a first component that is electrically coupled to the heterojunction, and a second substrate that is bonded to the layer of the first semiconducting material.

公开(公告)号：US11569182B2

公开(公告)日：2023-01-31

申请号：US17061075

申请日：2020-10-01

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter R. Stubler

IPC: H01L23/66 ,  H01L27/06 ,  H01L49/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/45 ,  H01L23/48 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/778 ,  H01L23/532 ,  H01L29/417

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

公开(公告)号：US11508821B2

公开(公告)日：2022-11-22

申请号：US15975917

申请日：2018-05-10

Applicant: Analog Devices, Inc.

Inventor： Puneet Srivastava ,  James G. Fiorenza

IPC: H01L29/40 ,  H01L29/205 ,  H01L29/66 ,  H01L21/02 ,  H01L29/778 ,  H01L29/20

Abstract: A semiconductor device includes a layer of a first semiconducting material, where the first semiconducting material is epitaxially grown to have a crystal structure of a first substrate. The semiconductor device further includes a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting material to form a heterojunction with the layer of the first semiconducting material. The semiconductor device further includes a first component that is electrically coupled to the heterojunction, and a second substrate that is bonded to the layer of the first semiconducting material.

公开(公告)号：US20210126120A1

公开(公告)日：2021-04-29

申请号：US17067988

申请日：2020-10-12

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/16 ,  H01L29/66 ,  H01L29/10

Abstract: Integrated circuits can include semiconductor devices with back-side field plates. The semiconductor devices can be formed on substrates that have conductive layers located within the substrates. The conductive layers can include at least one of a conducting material or a semi-conducting material that modifies an electric field produced by the semiconductor devices. The semiconductor devices can include one or more semiconductor layers that include one or more materials having a compound material that includes at least one Group 13 element and at least one Group 15 element.

公开(公告)号：US20210118871A1

公开(公告)日：2021-04-22

申请号：US17061075

申请日：2020-10-01

Applicant: Analog Devices, Inc.

Inventor： Daniel Piedra ,  James G. Fiorenza ,  Puneet Srivastava ,  Andrew Proudman ,  Kenneth Flanders ,  Denis Michael Murphy ,  Leslie P. Green ,  Peter A. Stubler

IPC: H01L27/06 ,  H01L49/02 ,  H01L29/20 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8252 ,  H01L29/45 ,  H01L23/66 ,  H01L29/205 ,  H01L23/48 ,  H01L29/778

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.