公开(公告)号：US20180190702A1

公开(公告)日：2018-07-05

申请号：US15908328

申请日：2018-02-28

Applicant: Artilux Corporation

Inventor： Yun-Chung Na ,  Che-Fu Liang ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Kuan-Chen Chu ,  Chung-Chih Lin ,  Han-Din Liu

IPC: H01L27/146 ,  G01S7/486 ,  H01L31/103

Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal; and a counter-doped region formed in a first portion of the first light absorption region, the counter-doped region including a first dopant and having a first net carrier concentration lower than a second net carrier concentration of a second portion of the first light absorption region.

公开(公告)号：US20180190698A1

公开(公告)日：2018-07-05

申请号：US15908447

申请日：2018-02-28

Applicant: Artilux Corporation

Inventor： Yun-Chung Na ,  Che-Fu Liang ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Kuan-Chen Chu ,  Chung-Chih Lin ,  Han-Din Liu

IPC: H01L27/146 ,  H01L29/06 ,  H01L31/103 ,  H01L29/732 ,  H01L31/02 ,  H01L31/028 ,  H01L29/08 ,  H01L29/161

CPC classification number: H01L27/14612 ,  G01S7/4816 ,  G01S7/486 ,  G01S7/4914 ,  G01S17/36 ,  G01S17/42 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14681 ,  H01L29/0657 ,  H01L29/0804 ,  H01L29/161 ,  H01L29/732 ,  H01L29/735 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1037 ,  H01L31/1105

Abstract: An optical apparatus including a semiconductor substrate; a first light absorption region supported by the semiconductor substrate, the first light absorption region including germanium and configured to absorb photons and to generate photo-carriers from the absorbed photons; a first layer supported by at least a portion of the semiconductor substrate and the first light absorption region, the first layer being different from the first light absorption region; one or more first switches controlled by a first control signal, the one or more first switches configured to collect at least a portion of the photo-carriers based on the first control signal; and one or more second switches controlled by a second control signal, the one or more second switches configured to collect at least a portion of the photo-carriers based on the second control signal, wherein the second control signal is different from the first control signal.

公开(公告)号：US20180006081A1

公开(公告)日：2018-01-04

申请号：US15702482

申请日：2017-09-12

Applicant: Artilux Corporation

Inventor： Yun-Chung Na ,  Szu-Lin Cheng ,  Shu-Lu Chen ,  Han-Din Liu ,  Hui-Wen Chen

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14689

Abstract: An optical sensor including a first material layer comprising at least a first material; a second material layer comprising at least a second material that is different from the first material, where a material bandgap of the first material is larger than a material bandgap of the second material; and a graded material layer arranged between the first material layer and the second material layer, the graded material layer comprising an alloy of at least the first material and the second material having compositions of the second material that vary along a direction that is from the first material to the second material.

公开(公告)号：US20170294550A1

公开(公告)日：2017-10-12

申请号：US15626969

申请日：2017-06-19

Applicant: Artilux Corporation

Inventor： Szu-Lin Cheng ,  Han-Din Liu ,  Shu-Lu Chen ,  Yun-Chung Na ,  Hui-Wen Chen

IPC: H01L31/18 ,  H01L31/028

CPC classification number: H01L31/1812 ,  H01L27/14629 ,  H01L27/14634 ,  H01L27/1469 ,  H01L31/02005 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/0549 ,  H01L31/107 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547

Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.