Abstract:
A semiconductor device is disclosed. The semiconductor device includes an internal circuit having a high breakdown voltage transistor, and a first electrostatic protection circuit in which electrostatic protection elements are connected in series. The sum of the breakdown voltage values of the electrostatic protection elements in the first electrostatic protection circuit is almost equal to the breakdown voltage value of the high breakdown voltage transistor. The first electrostatic protection circuit is connected between an input/output terminal and a ground terminal of the semiconductor device to which terminals the internal circuit is connected.
Abstract:
A metal powder manufacturing device for manufacturing a metal powder includes a feed for supplying a molten metal, a fluid spout unit, and a course modification unit. The fluid spout unit further includes a channel and an orifice. The channel is provided below the feed, allowing passing of the molten metal supplied from the feed. The orifice is opened at a bottom end of the channel, spouting a fluid into the channel. The above course modification unit is provided below the fluid spout unit, and forcibly changes the traveling direction of a dispersion liquid. This dispersion liquid is composed of multiple fine droplets dispersed into the fluid. The above droplets are a resultant of a breakup caused by a contact between the molten metal and the fluid ejected from the orifice. Here, the dispersion liquid is transported so that the droplets is cooled and solidified in the dispersion liquid in order to manufacture the metal powder.